Spin Transport in a Rashba Ring-Quantum Dot System Pumped by Microwave Fields

We report a theoretical study on producing electrically spin-polarized current in the Rashba ring with parallel double dots embedded, which are subject to two time-dependent microwave fields. By means of the Keldysh Green's function method, we present an analytic result of the pumped current at adiabatic limit and demonstrate that the interplay between the quantum pumping effectand spin-dependent quantum interference can lead to an arbitrarily controllable spin-polarized current in the device. The magnitude and direction of the charge and spin current can be effectively modulated by system parameters such as the pumping phase difference, Rashba precession phase, and the dynamic phase difference of electron traveling in two arms of ring; moreover, thespin-polarization degree of the charge current can also be tuned in the range [-∞, +∞]. Our findings may shed light on the all-electric way to produce the controllable spin-polarized charge current in the field of spintronics.     

一种电流引线的热力学计算方法

从超导磁体气冷电流引线的热平衡方程出发,对电流引线进行分段,提出了一种较为精确计算电流引线长横比及由电流引线末端流入低温容器热量的计算方法;电流引线中氦气流阻是设计电流引线时一个很重要的参数,由于电流引线片形状很复杂,计算其中氦气流阻比较好的方法是采用CFD软件Fluent。氦气模型单元数很庞大,因此对氦气模型进行了简化和分段,相邻两段模型间采用流量和压力边界条件进行耦合。     

磁致伸缩材料弱磁场响应特性的实验研究

针对磁致伸缩材料在弱磁场传感器领域的应用需要,采用迈克耳逊干涉原理实验测量了零应力条件下Tb-Dy-Fe材料和Fe-Ga合金的磁场响应灵敏度,以及不同应力下Fe-Ga合金的磁场响应特性和温度响应特性.实验结果表明：在零应力,外加磁场16 mT条件下,Fe-Ga合金的磁场响应灵敏度远高于Tb-Dy-Fe材料,更合适作为弱磁场传感器敏感材料;同时,在1.2 MPa预应力和26 mT偏置磁场下,Fe-Ga合金材料具有较好的磁场响应灵敏度和较大的饱和磁致伸缩系数,因而处在最佳工作状态.所得到的材料的磁场和温度响应曲线可作为弱磁场传感器参量设计的参考依据.     

基于逐差法推算液体表面张力系数的不确定度

用力敏传感器测量液体表面张力系数,采用逐差法处理数据,根据“测量不确定度”理论推算液体表面张力系数不确定度的传递公式,并运用于数据处理中。     

一个新的IEC61000-4-2标准ESD电流解析表达式

分析了两个ESD标准电流波形表达式,并提出一个新的基于脉冲函数来描述ESD标准电流的解析表达式,该表达式符合最新的标准IEC61000-4-2,在零时刻的电流及其微分部为0,且波形与实际测量波形基本吻合。     

Z-scheme基光电化学传感器的构建及其研究进展

光活性半导体之间的电子转移路径对光电化学传感器的光电性能具有重要影响,有效的电子传输方式对增强光电转换效率和提升传感器的灵敏度均具有重要意义.Z-scheme机制在提升光致载流子迁移效率的同时,可最大程度地保留光电活性半导体的氧化还原能力.因此,Z-scheme基光电化学传感体系的构建和设计备受关注.本文以Z-sche...     

沉积温度对硬质合金表面沉积的SiC薄膜的影响

采用强电流直流伸展电弧等离子体CVD技术,以Ar、H2和四甲基硅烷(TMS)为先驱气体,在YG6硬质合金衬底表面制备了SiC薄膜。实验结果表明:随着沉积温度的升高,薄膜的致密性和平整度提高;但当沉积温度过高时,SiC薄膜的表面开始具有含非晶碳球和呈花瓣状的疏松结构。在合适的沉积温度下,SiC薄膜的致密性和平整度较好,且其具有较好的附着力和一定的强度,而这样的SiC薄膜可以阻止在金刚石涂层沉积过程中硬质合金中含有的Co对金刚石相沉积过程的有害作用。     

Environmental Impacts on Spiking Properties in Hodgkin-Huxley Neuron with Direct Current Stimulus

Based on the well accepted Hodgkin-Huxley neuron model, the neuronal intrinsic excitability is studied when the neuron is subject to varying environmental temperatures, the typical impact for its regulating ways. With computer simulation, it is found that altering environmental temperature can improve or inhibit the neuronal intrinsic excitability so as to influence the neuronal spiking properties. The impacts from environmental factors can be understood that,the neuronal spiking threshold is essentially influenced by the fluctuations in the environment. With the environmental temperature varying, burst spiking is realized for the neuronal membrane voltage because of the environment-dependent spiking threshold. This burst induced by changes in spiking threshold is different from that excited by input currents or other stimulus.     

基于CS-GO/AgNPs氯酚分子印迹电化学传感器的构建

以2,4-二氯苯酚(2,4-DCP)为模板分子,吡咯(Py)为功能单体,协同壳聚糖-银纳米粒子氧化石墨烯(CS-GO/AgNPs)复合材料增强电导性,在玻碳电极(GCE)表面制备分子印迹膜,构建了2,4-DCP分子印迹电化学传感器(2,4-DCP-MIECS)并用于水环境中氯酚的特异性识别与检测。通过透射电子显微镜(TEM)、X射线衍射仪(XRD)对GO/AgNPs复合材料进行分析表征,采用循环伏安法(CV)、交流阻抗法(EIS)对电化学传感器进行性能表征。采用差分脉冲伏安法(DPV)对2,4-DCP进行检测,该电化学传感器的线性范围为1.0～1.0×10~3pmol/L,检出限为0.1 pmol/L,该传感器已用于水样品中2,4-DCP的检测。