Electrical Characterization of Copper Phthalocyanine Thin-Film Transistors with Fluoride Gate Insulator

Different fluoride materlals are used as gate dielectrics to fabricate copper phthalocyanine （CuPc） thin film transistors （OTFTs）. The fabricated devices exhibit good electrical characteristics and the mobility is found to be dependent on the gate voltage from 10^-3 to 10^-1 cm^2V^-1 s^-1. The observed noticeable electron injection at the drain electrode is of great significance in achieving ambipolar OTFTs, The same method for formation of organic semiconductors and gate dielectric films greatly simplifies the fabrication process. This provides a convenient way to produce high-performance OTFTs on a large scale and should be useful for integration in organic displays.     

The electrical characteristics of a 4H-silicon carbide metal-insulator-semiconductor structure with Al2O3 as the gate dielectric

A 4H-silicon carbide metal-insulator-semiconductor structure with ultra-thin Al₂O₃ as the gate dielectric, deposited by atomic layer deposition on the epitaxial layer of a 4H-SiC (0001) 8⁰N-/N+ substrate, has been fabricated. The experimental results indicate that the prepared ultra-thin Al₂O₃ gate dielectric exhibits good physical and electrical characteristics, including a high breakdown electrical field of 25 MV/cm, excellent interface properties (1×10¹⁴ cm^-2) and low gate-leakage current (I_G = 1 × 10^-3 A/cm^-2@E_ox = 8 MV/cm). Analysis of the current conduction mechanism on the deposited Al₂O₃ gate dielectric was also systematically performed. The confirmed conduction mechanisms consisted of Fowler-Nordheim (FN) tunneling, the Frenkel-Poole mechanism, direct tunneling and Schottky emission, and the dominant current conduction mechanism depends on the applied electrical field. When the gate leakage current mechanism is dominated by FN tunneling, the barrier height of SiC/Al₂O₃ is 1.4 eV, which can meet the requirements of silicon carbide metal-insulator-semiconductor transistor devices.     

ICP–AES测定电子电气产品中铅的不确定度评定

建立了ICP–AES测定电子电气产品中铅含量的方法,根据该方法的定量数学模型分析了不确定度的来源,对各不确定度分量进行了评定和量化,计算了合成不确定度和扩展不确定度。结果表明,标准系列溶液配制、标准曲线拟合、测量重复性和加标回收率是不确定度的主要来源。电子电气产品塑胶部件中铅含量为149.07 mg/kg时,扩展不确定度为3.55 mg/kg(k=2)。     

微波消解-电感耦合等离子体发射光谱筛选法对电子电气产品塑料部件中有机锡的测定

建立了微波消解-电感耦合等离子体原子发射光谱(ICP-AES)筛选法测定电子电气产品塑料部件中有机锡的方法.结果表明:采用5 mL硝酸、1 mL 30%双氧水和1 mL氟硼酸消解体系,在190 ℃下消解30 min可使绝大多数塑料样品获得较好的消解效果,选取聚氯乙烯(PVC)、聚苯乙烯(PS)和丙烯腈-丁二烯-苯乙烯(ABS)3种典型空白塑料基质进行标准添加回收实验,回收率为88%～102%,相对标准偏差(RSD)小于3%.实际阳性样品的测定结果显示,建立的方法与GC-MS方法的测定结果吻合.该方法简单快速、灵敏度高、精密度好,可满足实际电子电气产品中有机锡筛选的需要.     

Synthesis and Electrical Properties of New Solid State Electrolyte Materials Ce_(6-x)Ho_xMoO_(15-δ)(0.0≤x≤1.2)

Ce6-xHoxMoO15-δ(0.0≤x≤1.2) was synthesized by modified sol-gel method and characterized by diffe-rential X-ray diffraction(XRD), Raman, and X-ray photoelectron spectroscopy(XPS) methods. The oxide ionic con-ductivity of the samples was investigated by AC impedance spectroscopy. It shows that all the samples are single phase with a cubic fluorite structure. The solid solution Ce6-xHoxMoO15-δ(x=0.6) was detected to be the best con-ducting phase with the highest conductivity(σt=1.05×10-2 S/cm) at 800 ℃ and the lowest activation energy(Ea=1.09eV). These properties suggest that this kind of material has a potential application in intermediate-low temperature solid oxide fuel cells.     

Optical MIMO transmission for SCFDM-PON based on polarization interleaving

We propose a blind quadrature imbalance (QI) compensation algorithm based on the statistical properties of I and Q signals in a receiver. The algorithm estimates the QI parameters of a receiver by calculating the mean, variance, and correlation coefficient of I and Q components. Then, the estimated imbalance parameters are adopted to compensate for the QI in the receiver. Simulation results show that the Q factor is considerably optimized by the application of the QI compensation algorithm in an 80-Gb/s Pol-Mux coherent optical quadrature phase-shift keying (CO-QPSK) system. Compared with conventional algorithms, the proposed algorithm exhibits better performance when the phase deviation from QI exceeds ±15°.     

采用Ga掺杂的具有低泄漏电流和高稳定性避雷器ZnO压敏电阻

为了获得性能更为稳定的ZnO压敏电阻,研究了含有Ga掺杂的ZnO压敏电阻的稳定特性,对所获得的实验样品的微观结构和电气特性进行了电子显微镜扫描测试、电压-电流非线性特性测试、电容-电压特性测试、X-射线衍射谱测试、能谱扫描测试、介质损耗测试及交流加速老化测试.实验结果表明,随着Ga掺杂量的进一步增加, Ga离子占据了ZnO晶格上的空位,增加了界面态密度,提高了肖特基势垒高度,一方面降低了ZnO压敏电阻的泄漏电流密度,另一方面抑制了耗尽层中自由电子的迁移,提高了ZnO压敏电阻在高荷电率环境下的稳定特性. Al离子固溶到ZnO晶格当中,产生大量的自由电子,降低了ZnO晶粒的电阻率,从而有效降低了ZnO压敏电阻在通过大电流时的残压比.当Ga的掺杂摩尔分数达到0.6%时,泄漏电流密度为0.84μA/cm²,残压比为1.97,非线性系数为66,其肖特基势垒高度为1.81 eV.在115℃环境下,对试验样品施加87%E1 mA,89%E1 mA和91%E1 mA的交流加速老化电压,老化时间为1000 h,老化系数分别为0.394, 0.437和0.550.此研究将有助于进一步...