人力资本投资对经济发展的影响研究

从两个方面(依赖关系和制约关系)阐述了人力资本投资对经济的影响作用——拉动作用和推动作用.并通过实例计算了贵州省人力资本投资对当地经济发展的影响作用量等.     

ARINC659背板总线的电气特性研究与设计改进

ARINC659背板总线是综合化模块化航空电子系统的关键技术,逐渐用于国内军用民用飞机;在介绍ARINC659总线电气特性和分析电气设计要求的基础上,进行了设计应用实践,并对ARINC659总线在使用中出现的信号品质问题进行分析和仿真,得出信号回路上的寄生电容和寄生电感是导致信号输出端波形出现剧烈振荡和总线回环测试出错的根本原因,通过更改设计,减少ARINC659总线信号通道长度降低了信号寄生电容和寄生电感,使信号品质得到了极大的改善,满足了ARINC659总线电气设计要求,顺利通过了试验验证。     

Frequency dependence of the magnetoelectric effect in a magnetostrictive-piezoelectric heterostructure

The frequency dependence of the magnetoelectric effect in a magnetostrictive-piezoelectric heterostructure is theoretically studied by solving combined magnetic, elastic, and electric equations with boundary conditions. Both the mechanical coupling coefficient and the losses of the magnetostrictive and piezoelectric phases are taken into account. The numerical result indicates that the magnetoelectric coefficient and the resonance frequency are determined by the mechanical coupling coefficient, losses, and geometric parameters. Moreover, at the electromechanical resonance frequency, the module of the magnetoelectric coefficient is mostly contributed by the imaginary part. The relationship between the real and the imaginary parts of the magnetoelectric coefficient fit well to the Cole-Cole circle. The magnetostrictive-piezoelectric heterostructure has a great potential application as miniature and no-secondary coil solid-state transformers.     

Electrical properties of MOCVD-grown GaN on Si （111） substrates with low-temperature AIN interlayers

The electrical properties of the structure of GaN grown on an Si （111） substrate with low-temperature （LT） A1N interlayers by metal-organic chemical-vapour deposition are investigated. An abnormal P-type conduction is observed in our GaN-on-Si structure by Hall effect measurement, which is mainly due to the A1 atom diffusing into the Si substrate and acting as an acceptor dopant. Meanwhile, a constant n-type conduction channel is observed in LT-A1N, which causes a conduction-type conversion at low temperature （50 K） and may further influence the electrical behavior of this structure.     

Fabrication and electrical properties of axial and radial GaAs nanowire pn junction diode arrays

We report on the fabrications and characterizations of axial and radial Ga As nanowire pn junction diode arrays.The nanowires are grown on n-doped Ga As（111）B substrates using the Au-catalyzed vapor–liquid–solid mechanism by metal–organic chemical vapor deposition（MOCVD）. Diethyl–zinc and silane are used as p- and n-type dopant precursors,respectively. Both the axial and radial diodes exhibit diode-like J–V characteristics and have similar performances under forward bias. Under backward bias, the axial diode has a large leakage current, which is attributed to the bending of the pn junction interface induced by two doping mechanisms in Au-catalyzed nanowires. The low leakage current and high rectification ratio make the radial diode more promising in electrical and optoelectronic devices.     

加速溶剂萃取-高效液相色谱/紫外检测电子电气塑料中十溴联苯醚

采用加速溶剂萃取、自制固相萃取柱净化和高效液相色谱/紫外检测对电子电气塑料中的十溴联苯醚进行定量分析,建立电子电气塑料中十溴联苯醚的分析方法.该法回收率达86.6%,采用标准添加法时RSD为4.7%.S/N=3时,检出限为0.5 mg/L.     

动量表象下的Lorentz变换生成元

在动量表象下对非零质量带自旋粒子的角动量算符和推动矢量算符也即Lorentz变换生成元进行了讨论,得到了它们按轨道和自旋两部分分拆的新的表达式.     

有机硅单体合成反应催化机理研究取得新进展北大核心CSCD

有机硅作为一种小众化学产品,对大多数人来说,可能有些陌生。其实,有机硅产品的应用范围遍及我们生产生活的各个领域：航空、建筑、电子电气、纺织、汽车、机械、皮革造纸、化工轻工、金属和油漆、医药医疗等等。     

Preparation and Electrochemical Properties of 3-Pyridinyl-6-aryl-1, 2, 4-triazolo [3, 4-b][1, 3, 4]thiadiazoles

A series of 3-pyridinyl-6-aryl-1, 2, 4-triazolo[3, 4-b][1, 3, 4]thiadiazoles(PATT) were prepared, the structures were confirmed by 1R and ^1H NMR spectra. The results of cyclic voltammetry measurements imply that all these compounds have a higher electron affinity (EA) than 2-(4-biphenyl)-5-(4-tert-butyl phenyl)-1, 3. 4-oxadiazole (PBD) which implies that PATT could be acting as better electron acceptors than widely used electron transporting material PBD.     

S+X双频旋转关节设计与仿真

为解决S+X双频合建大型测控天线S、X不能同时发射上行功率的技术难题,对天馈线系统主要组成部件包括：天线反射面、S/X双频馈源、S/X双频段旋转关节等进行了分析,并针对结构实现与电气设计上的技术难点,给出了解决方案：电气设计上采用TM01模式作为X频段圆波导主要传输模式,采用TEM模式作为S频段同轴波导传输模式;在结构上使用两通路同轴嵌套的形式,完成了双频关节设计;通过电气性能仿真,得到了满意的结果,据此完成了双频旋转关节方案设计。通过计算、仿真与优化,结果表明所设计双频关节的电气性能均优于指标要求。采用该方案设计的某S+X双频合建大型测控天线实际使用表明：S、X能同时发射上行功率,同时构成天地测控回路。