Sc2O3电子结构和光学性质的第一性原理研究

本文基于第一性原理平面波赝势(PWP)和广义梯度近似(GGA)方法,研究了Sc2O3的电子结构、态密度和光学性质.计算结果表明:Sc2O3是一种直接带隙半导体,其能带宽度为3.79 eV,价带顶部主要由O的2p和Sc的3p3d杂化而成,导带主要由Sc的3d和O的2p构成.同时,文中也分析了Sc2O3的介电函数、折射率、光电导率和吸收谱等光学性质.计算得到静态介电常数ε1(0)=1.57,折射率n0 =1.25,在紫外区有较大的吸收系数.     

电子磁矩对同步辐射频谱的修正

本文从偶极子辐射场的Heaviside-Feynman表达式出发, 用经典的电动力学方法推导了考虑内禀磁矩影响后的相对论电子辐射频谱分布的表达式, 并对做匀速圆周运动的极端相对论性电子的同步辐射, 计算了两个偏振方向上的考虑磁矩修正后的辐射谱. 计算结果表明对于特征频率为ω_c的同步辐射, 如果ħω_c≥10 keV, 内禀磁矩对辐射的修正是可观的. 通过同步辐射的内禀磁矩修正, 本文讨论了电子束极化度与辐射场偏振度的依赖关系, 并基于此关系提出一种测量电子束极化度的新方法. 关键词： 同步辐射 电子内禀磁矩 同步辐射偏振度 束流极化度     

基于C语言的等效电子耦合原子态的编程计算

详述了用turboc2.0编程计算等效电子LS耦合原子态的方法,并给出了计算nf5电子组态的LS耦合原子态的具体程序.     

共振瑞利散射法检测水环境中痕量锌

基于在Tris-HCl介质中,研究了Zn(SCN)2-4配合物与人血清白蛋白结合的共振瑞利散射光谱.结果发现, Zn(SCN)2-4的加入导致体系共振瑞利散射增强;考察了各种影响因素和适宜的反应条件;确定了共振瑞利散射光强度与Zn2 的关系,从而建立了测定痕量Zn2 的共振瑞利光散射新方法;线性范围0.005-1.0μg/mL,检出限1.47ng/mL,用于环境水样中痕量Zn2 的测定,RSD为2.01%-3.74%,加标回收率为94.75%-101.90%.方法简便、快速、灵敏度高、选择性好.     

LED电子显示屏播放软件的设计

随着LED电子显示屏硬件技术的发展，要求相应的播放控制软件也要提高到一个新的水平。我公司原有的LED编辑播放软件已经不能满足客户要求。为最大限度的把LED电子显示屏的优点展示出来，开发一套新的播放软件势在必行。     

Electron Injection by E—Field Drift and its Application in Starting—up Tokamaks at Low Loop Voltage

We propose an innovative method of election injection by E-field drift into a plasma device and discuss its application in starting-up tokamak plasmas at low loop voltage.The experimental results obtained from HT-6M Tokamak are also presented.The breakdown loop voltage is obviously reduced and the discharge performance is improved by using the electron injection method.It could be applied to some other types of plasma device.     

Measurement of Change of ^7Be Decay Rate in Be and Au

We have measured the possible change of the decay rate of ^7Be implanted into hosts of natural beryllium and natural gold. No difference between the ^7 Be decay rates in the two hosts is observed within the experimental precision of 0.12%. This result implies that change of the decay rate of ^7Be implanted in different materials cannot be simply expected from the electron affinity difference consideration lonely and the lattice structure of the host materials should be taken into account.     

High—Efficiency Organic Double—Quantum—Well Light—Emitting Devices Using 5,6,11,12—Tetraphenylnaphthacene Sub—monolayer as Potential Well

The double-quantum-well organic light-emitting devices of indium-tin-oxide (ITO)/NPB (50nm)/rubrene (0.05nm)/NPB (4nm)/rubrene (0.05nm)/Alq3 (50nm)/LiF (0.5nm)/Al were fabricated, in which N,N-bis-(1-naphthyl)-N,N‘-diphenyl-1,1‘-biphenyl-4,4‘‘‘‘‘‘‘‘-diamine (NPB) is used as a barrier potential or hole transport layer, tris (8-hydroxyquinoline) aluminium (Alq3) used as electron transport layer, and 5,6,11,12-tetraphenylnaphthacene (rubrene) as a potential well and emitter. The brightness can reach 18610cd/m^2 at 13V. The maximum electroluminescent efficiency of the device was 6.61cd/A at 7V, which was higher than that of common dope-type devices. In addition, the electroluminescence efficiency is relatively independent of the drive voltage in the range from 5 to 13V.