Electrical Property of Infrared-Sensitive InAs Solar Cells

InAs infrared-sensitive solar cells are fabricated by using the films grown by the liquid phase epitaxy technique. The film microstructures are characterized by x-ray diffraction and scanning electronic microscopy. The current-voltage characteristics of the solar cells in the dark and under AM1.5 illumination at 300 K and 77 K are discussed. The conversion efficiency of p-InAs/n-sub InAs cells decreases when the thickness of the p-type film changes from 1.7 μm to 3.5 μm, which is caused by the reduced effective photons near p？n junction. The p-InAs/n-InAs/n-sub InAs solar cell with the conversion efficiency of 7.43% in 1-2.5 μm under AM1.5 at 77 K is obtained. The short circuit current density increases dramatically with decreasing temperature due to the weakened effect of phonon scattering.     

Highly Efficient Simplified Organic Light-Emitting Diodes Utilizing F4-TCNQ as an Anode Buffer Layer

We demonstrate that the electroluminescent performances of organic light-emitting diodes （OLEDs） are significantly improved by evaporating a thin F4-TCNQ film as an anode buffer layer on the ITO anode. The optimum Alq3-based OLEDs with F4-TCNQ buffer layer exhibit a lower turn-on voltage of 2.6 V, a higher brightness of 39820cd/m^2 at 13 V, and a higher current efficiency of 5.96cd/A at 6 V, which are obviously superior to those of the conventional device （turn-on voltage of 4.1 V, brightness of 18230cd/m^2 at 13 V, and maximum current efficiency of 2.74calla at 10 V）. Furthermore, the buffered devices with F4-TCNQ as the buffer layer could not only increase the efficiency but also simplify the fabrication process compared with the p-doped devices in which F4-TCNQ is doped into β-NPB as p-HTL （3.11 cd/A at 7 V）. The reason why the current efficiency of the p-doped devices is lower than that of the buffered devices is analyzed based on the concept of doping, the measurement of absorption and photoluminescence spectra of the organic materials, and the current density-voltage characteristics of the corresponding hole-only devices.     

基于迭代修正的液晶相控阵激光雷达波控数据获取

分析了影响液晶相控阵波控数据获取的几个关键因素,在此基础上通过计算期望相位面与实际相位面的相位差,提出一种基于迭代修正的波控数据获取方法,该方法可通过改变加载在液晶阵列上的参考电压或改变参考相位面实现。讨论了算法关键参数的选择。通过仿真进一步研究了液晶特性曲线范围和高斯初始相位对波控数据获取的影响。仿真结果表明:该方法能获得比较准确的波控数据;液晶特性曲线范围对波控数据的准确获取非常重要,当曲线范围较大时,液晶相控阵可补偿高斯光束引入相位的影响。     

多倍脉宽输出的螺旋重入脉冲形成线

提出了一种螺旋线重入结构的脉冲形成线,可实现多倍脉宽输出。该结构由储能外线和重入内线组成;重入内线的外屏蔽圆筒内表面呈阶梯状,内筒为均匀螺旋线结构,实现简单;储能外线与Tesla变压器一体化。结合采用螺旋重入和二级重入结构,给出了一组10 GW功率、百ns脉宽的重入型脉冲形成线设计,形成线采用Midel 7131合成酯绝缘介质,外筒内径1 m,长度2 m。     

高中物理竞赛中复杂直流电路的分析方法

复杂直流电路属于大学电学部分的知识,能力要求较高,在高考中不作要求,但在物理竞赛中,却是考纲规定的考试内容.历年的许多省市乃至全国的物理竞赛中,时常出现复杂直流电路的问题,学生普遍感到比较困难,不知道如何下手,甚至使问题变得更加复杂.因此,要想在竞赛中快速而准确地解决此类问题,必须要求学生对复杂直流电路的相关知识有更深层次的理解和掌握.1什么是复杂直流电路高中阶段所接触的电路一般是由电阻组成的混     

高重复频率脉冲功率技术及其应用:（1） 概述

从实际应用的角度出发,概括性地描述了高重复频率脉冲功率的主要技术特点,如工作次数多、脉冲间隔时间短和平均输出功率高等。通过介绍高平均功率准分子激光、常压脉冲气体放电、感应式回旋加速器等有代表性应用实例,论述了高重复频率脉冲功率技术的学术意义。高重复频率脉冲功率技术将进一步完善脉冲压缩理论和电路设计方法,从而在短脉冲和波形控制等方面取得进展,同时高重复频率脉冲功率发生器将进一步趋向多样化和极限化。高重复频率脉冲功率技术的发展与脉冲功率器件性能的持续提高之间相互促进,会不断将高重复频率脉冲功率技术的成果带向工业生产和日常生活。     

应变对层状锰系锂离子电池正极材料输出电压的影响

利用第一性原理方法系统研究了不同应 变模式对LiMnO₂和Li₂MnO₃输出电压的影响, 建立了输出电压与弹性常数及应变之间的关系. 发现所有应变对输出电压都是降低的, 且应变效应是各向异性的. 大部分的单轴应变5%时对输出电压的降低都小于0.1 V. 由于层状的电极材料层间的键合作用较弱, 且受脱锂后形成的锂空位影响较大, 当从锂层脱出锂时, 垂直于层方向的应变对输出电压影响较大; 而对Li₂MnO₃系统从过渡金属层中脱锂时, 平行于层的应变对输出电压影响更大. Li₂MnO₃骨架支撑的层状固溶体系中, 应变使高电压充电阶段的电压维持在截断电压之下, 并打开过渡金属层中锂的迁移通道, 产生较为持久的充电而可能获得较大的充电容量.     

Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

In this paper,two-dimensional electron gas（2DEG） regions in AlGaN/GaN high electron mobility transistors（HEMTs） are realized by doping partial silicon into the AlGaN layer for the first time.A new electric field peak is introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge.The high electric field near the gate for the complete silicon doping structure is effectively decreased,which makes the surface electric field uniform.The high electric field peak near the drain results from the potential difference between the surface and the depletion regions.Simulated breakdown curves that are the same as the test results are obtained for the first time by introducing an acceptor-like trap into the N-type GaN buffer.The proposed structure with partial silicon doping is better than the structure with complete silicon doping and conventional structures with the electric field plate near the drain.The breakdown voltage is improved from 296 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field.     

Influence of a two-dimensional electron gas on current—voltage characteristics of Al0.3{Ga}0.7 N/GaN high electron mobility transistors

The J-V characteristics of AltGa1 tN/GaN high electron mobility transistors（HEMTs） are investigated and simulated using the self-consistent solution of the Schro dinger and Poisson equations for a two-dimensional electron gas（2DEG） in a triangular potential well with the Al mole fraction t = 0.3 as an example.Using a simple analytical model,the electronic drift velocity in a 2DEG channel is obtained.It is found that the current density through the 2DEG channel is on the order of 10^13 A/m^2 within a very narrow region（about 5 nm）.For a current density of 7 × 10^13 A/m62 passing through the 2DEG channel with a 2DEG density of above 1.2 × 10^17 m^-2 under a drain voltage Vds = 1.5 V at room temperature,the barrier thickness Lb should be more than 10 nm and the gate bias must be higher than 2 V.