Target tracking in infrared imagery using a novel particle filter

To address two challenging problems in infrared target tracking, target appearance changes and unpre- dictable abrupt motions, a novel particle filtering based tracking algorithm is introduced. In this method, a novel saliency model is proposed to distinguish the salient target from background, and the eigenspace model is invoked to adapt target appearance changes. To account for the abrupt motions efficiently, a two- step sampling method is proposed to combine the two observation models. The proposed tracking method is demonstrated through two real infrared image sequences, which include the changes of luminance and size, and the drastic abrupt motions of the target.     

HfO2薄膜生长应力演化研究

薄膜应力的存在是薄膜材料的本征特性,对过程中薄膜应力的测量与精确控制具有重要意义.搭建了基于双光束偏转基底曲率测量装置,再结合薄膜厚度的实时监控,实现了对薄膜应力演化过程的观测.对HfO2薄膜的生长过程做了实时研究.结果显示,在所研究条件下,HfO2薄膜的生长应力随厚度的增加,在360～660 MPa范围内变化;沉积温度越高,沉积真空度越高,张应力越大;在真空度较高的沉积条件下,薄膜应力强烈地受到基底表面的影响,随着薄膜厚度的增加,应力也趋于稳定.     

GaAs Based InAs/GaSb Superlattice Short Wavelength Infrared Detectors Grown by Molecular Beam Epitaxy

InAs/GaSb superlattice （SL） short wavelength infrared photoconduction detectors are grown by molecular beam epitaxy on GaAs（O01） semi-insulating substrates. An interfacal misfit mode AISb quantum dot layer and a thick GaSb layer are grown as buffer layers. The detectors containing a 200-period 2 ML/S ML InAs/GaSb SL active layer are fabricated with a pixel area of 800×800 μm^2 without using passivation or antirefleetion coatings. Corresponding to the 50% cutoff wavelengths of 2.05μm at 77K and 2.25 μm at 300 K, the peak detectivities of the detectors are 4 × 10^9 cm·Hz^1/2/W at 77K and 2 × 10^8 cm·Hz1/2/W at 300K, respectively.     

A Variational Iteration Solving Method for a Class of Generalized Boussinesq Equations

We study a generalized nonlinear Boussinesq equation by introducing a proper functional and constructing the variational iteration sequence with suitable initial approximation. The approximate solution is obtained for the solitary wave of the Boussinesq equation with the variational iteration method.     

Structural Feature and Solute Trapping of Rapidly Grown Ni3Sn Intermetallic Compound

The rapid dendritic growth of primary Ni3Sn phase in undercooled Ni-30.9%Sn-5%Ge alloy is investigated by using the glass fluxing technique. The dendritic growth velocity of Ni3Sn compound is measured as a function of undercooling, and a velocity of 2.47m/s is achieved at the maximum undercooling of 251 K （0.17TL）. The addition of the Ge element reduces its growth velocity as compared with the binary Ni75Sn25 alloy. During rapid solidification, the Ni3Sn compound behaves like a normal solid solution and it displays a morphological transition of ＂coarse dendrite-equiaxed grain-vermicular structure＂ with the increase of undereooling. Significant solute trapping of Ge atoms occurs in the whole undercooling range.     

Effect of Carbonized Conditions on Residual Strain and Crystallinity Quality of Heteroepitaxial Growth 3C-SiC Films

Heteroepitaxial growth of SiC on n-Si（111） substrates is performed by a low pressure chemicaJ vapor deposition process. The effects of different carbonized temperature and carbonized time on the crystalline quality and the residual strain of 3C-SiC films are discussed. The results show that the residual strain is obviously reduced and the crystalline quality is greatly improved at the best carbonized temperature of 1000℃ and the carbonized time of 5 min. Under these optimized carbonization conditions, thick epitaxial films of about 15 μm with good crystalline quality and low residual strain can be obtained.     

FATIGUE GROWTH MODELING OF MIXED-MODE CRACK IN PLANE ELASTIC MEDIA

This paper presents an extension of a displacement discontinuity method with cracktip elements （a boundary element method） proposed by the author for fatigue crack growth analysis in plane elastic media under mixed-mode conditions. The boundary element method consists of the non-singular displacement discontinuity elements presented by Crouch and Starfield and the crack-tip displacement discontinuity elements due to the author. In the boundary element implementation the left or right crack-tip element is placed locally at the corresponding left or right crack tip on top of the non-singular displacement discontinuity elements that cover the entire crack surface and the other boundaries. Crack growth is simulated with an incremental crack extension analysis based on the maximum circumferential stress criterion. In the numerical simulation, for each increment of crack extension, remeshing of existing boundaries is not required because of an intrinsic feature of the numerical approach. Crack growth is modeled by adding new boundary elements on the incremental crack extension to the previous crack boundaries. At the same time, the element characteristics of some related elements are adjusted according to the manner in which the boundary element method is implemented. As an example, the fatigue growth process of cracks emanating from a circular hole in a plane elastic plate is simulated using the numerical simulation approach.     

射线探测用碲锌镉晶体及其器件研究

采用改进的布里奇曼(B ridgm an)方法进行锌组分为0.15碲锌镉(Cd0.85Zn0.15Te)晶体的生长。通过严格控制晶体生长过程中Cd的蒸气分压,使得所生长的碲锌镉晶体在结晶质量方面达到了较好的水平。对其性能进行测试,红外透射比T>60%、沉积相密度<1×104/cm2、位错腐蚀坑密度DEPD<6×104/cm2、X射线衍射双晶回摆曲线半峰全宽FWHM<20 arcsec、电阻率ρ>1010Ω.cm。利用所生长的晶体初步制作了平面型单元碲锌镉射线探测器,所用晶体的尺寸为5 mm×5 mm×2.5 mm,制成的探测器在室温下对125I和241Am放射源进行了探测测量。对125I放射源,探测出了强度为74.5%的27.5 keV的γ射线特征峰,不能仔细分辨出强度为39.8%的27.2 keV的γ射线特征结构;对241Am放射源,探测出了59.5 keV的γ射线特征峰,分辨率优于6 keV,半峰全宽FWHM<10%,同时还能检测出Te、Cd的X射线逃逸的混合峰以及241Am低能Te-K系、Np-L系的两个X射线特征峰。     

碳黑颗粒生长模型的初步研究

本文利用反应类(Reaction Class)概念和矩(Moment)方法,研究了层流预混甲烷火焰中碳黑颗粒的成核与长大过程。模型综合考虑了颗粒的成核、颗粒间由于碰撞的聚合、以及气态组分在颗粒表面的生长。通过数值计算预报了碳黑颗粒平均粒径、总表面积、体积分数和数密度,以及萘(A4)和乙炔(C2H2)在颗粒表面的增长速率。     

Extended Fisher-Kolmogorov系统的渐近吸引子

考虑了ExtendedFisher-Kolmogorov系统的解的长时间行为,构造了一个有限维解序列即该系统的渐近吸引子,证明了它在长时间后无限趋于方程的整体吸引子,并给出了渐近吸引子的维数估计.