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881.
利用Monte Carlo(MC)方法模拟研究了四方和六方晶格基底上薄膜生长的初始阶段岛的形貌和岛的尺寸与基底温度和入射粒子剩余能量之间的关系.模型中考虑了粒子的沉积、吸附粒子的扩散和蒸发等过程.结果表明,基底晶格结构对薄膜生长具有明显影响.当基底温度为300K、入射粒子剩余能量为0时,四方晶格基底上薄膜的生长已经呈现明显的凝聚生长,随着基底温度或入射粒子剩余能量的增加,岛的数目变少、岛的平均尺寸变大.对于六方晶格基底,当入射粒子剩余能量为0、温度从300 K升高到350 K时,岛的形貌从分散生长向分形生长转变;当基底温度为300 K、入射粒子剩余射能量从0上升到0.05 eV时,岛由分散生长向分形生长转变. 相似文献
882.
883.
采用低压金属有机化学气相沉积(LP-MOCVD)技术,两步生长法在InP衬底上制备In0.82Ga0.18As材料。研究缓冲层的生长温度对In0.82Ga0.18As薄膜的结构及电学性能的影响。固定外延薄膜的生长条件,仅改变缓冲层生长温度(分别为410,430,450,470 ℃),且维持缓冲层其他生长条件不变。用拉曼散射研究样品的结构性能,测量四个样品的拉曼散射光谱,得到样品的GaAs的纵向光学(LO)声子散射峰的非对称比分别为1.53,1.52,1.39和1.76。测量样品的霍耳效应表明,载流子浓度随缓冲层生长温度变化而改变,同时迁移率也随缓冲层生长温度变化而改变。通过实验得出:缓冲层的生长温度能够影响In0.82Ga0.18As薄膜的结构及电学性能。最佳的缓冲层生长温度为450 ℃。 相似文献
884.
885.
The synthesis of zinc oxide (ZnO) nanowires is achieved by vapor phase transportation (VPT) method. The designed quartz tube, whose both ends are narrow and the middle is wider, is used to control the growth of ZnO nanowires. Dielectrophoresis (DEP) method is employed to align and manipulate ZnO nanowires which are ultrasonic dispersed and suspended in ethanol solution. Under the dielectrophoretic force, the nanowires are trapped on the pre-patterned electrodes, and further aligned along the electric field and bridge the electrode gap. The dependence of the alignment yield on the applied voltage and frequency is investigated. 相似文献
886.
To address two challenging problems in infrared target tracking, target appearance changes and unpre- dictable abrupt motions, a novel particle filtering based tracking algorithm is introduced. In this method, a novel saliency model is proposed to distinguish the salient target from background, and the eigenspace model is invoked to adapt target appearance changes. To account for the abrupt motions efficiently, a two- step sampling method is proposed to combine the two observation models. The proposed tracking method is demonstrated through two real infrared image sequences, which include the changes of luminance and size, and the drastic abrupt motions of the target. 相似文献
887.
888.
GaAs Based InAs/GaSb Superlattice Short Wavelength Infrared Detectors Grown by Molecular Beam Epitaxy
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InAs/GaSb superlattice (SL) short wavelength infrared photoconduction detectors are grown by molecular beam epitaxy on GaAs(O01) semi-insulating substrates. An interfacal misfit mode AISb quantum dot layer and a thick GaSb layer are grown as buffer layers. The detectors containing a 200-period 2 ML/S ML InAs/GaSb SL active layer are fabricated with a pixel area of 800×800 μm^2 without using passivation or antirefleetion coatings. Corresponding to the 50% cutoff wavelengths of 2.05μm at 77K and 2.25 μm at 300 K, the peak detectivities of the detectors are 4 × 10^9 cm·Hz^1/2/W at 77K and 2 × 10^8 cm·Hz1/2/W at 300K, respectively. 相似文献
889.
A Variational Iteration Solving Method for a Class of Generalized Boussinesq Equations 总被引:2,自引:0,他引:2
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We study a generalized nonlinear Boussinesq equation by introducing a proper functional and constructing the variational iteration sequence with suitable initial approximation. The approximate solution is obtained for the solitary wave of the Boussinesq equation with the variational iteration method. 相似文献
890.
The rapid dendritic growth of primary Ni3Sn phase in undercooled Ni-30.9%Sn-5%Ge alloy is investigated by using the glass fluxing technique. The dendritic growth velocity of Ni3Sn compound is measured as a function of undercooling, and a velocity of 2.47m/s is achieved at the maximum undercooling of 251 K (0.17TL). The addition of the Ge element reduces its growth velocity as compared with the binary Ni75Sn25 alloy. During rapid solidification, the Ni3Sn compound behaves like a normal solid solution and it displays a morphological transition of "coarse dendrite-equiaxed grain-vermicular structure" with the increase of undereooling. Significant solute trapping of Ge atoms occurs in the whole undercooling range. 相似文献