场致发射的温度效应对微波管爆炸电子发射的影响

为研究场致发射的温度效应对微波管中爆炸电子发射过程的影响,在对比分析低温条件下的场致发射电流密度Fowler-Nordheim（FN）和一般的电子发射电流密度积分公式的基础上,利用细长圆柱形微凸起模型,重点考虑焦耳加热和热传导两个因素,编程计算得到了微凸起内部的温度分布和不同位置处温度随时间的变化。结果表明:场致发射的温度效应是一个重要影响因素,考虑温度对场致发射的影响后,微凸起内部各点的温度随时间呈非线性增长,且增长速率越来越大;在微波电场强度较弱时,若不考虑场致发射的温度效应而直接用FN公式表示的电流密度代入计算,会使爆炸发射延迟时间变短;当微波电场很强时,温度效应对爆炸发射延迟时间的影响则较小。     

110kV冷绝缘高温超导电缆在故障电流下的温度计算与分析

研究了110kV冷绝缘高温超导电缆失超时,故障电流的分流情况,并以此为依据,建立了电缆在故障电流下失超时,温升与时间关系的计算模型;通过MATLAB对计算模型进行了求解,并对求解结果进行了分析;计算出了电缆在不同故障电流下,温度上升到不同值所需要的时间,进一步明确了故障电流的大小对电缆温升的影响。     

波纹管对超导电缆出口液氮温度的影响

建立了30米长高温超导电缆的二维模型,利用Fluent软件对该模型进行仿真分析。在该模型中,采用波纹管恒温器,分析了波纹管的波距、波高等因素对出口液氮温度的影响。结果表明:在相同的热负荷及流量下,波纹管的波距越小,波高越大,出口液氮温度越高。超导电缆波纹管内液氮温度模拟,为低温冷却系统的优化设计提供理论依据。     

不同结构毛细管网辐射板供冷性能实验研究

对两种不同结构毛细管网辐射板的性能进行了实验研究,分析了在不同供水温度下,该两种辐射板在表面温度分布、供冷能力、安装辐射板房间温度变化情况之间的差异,为今后毛细管网辐射供冷空调系统辐射末端的设计应用及运行控制提供依据。     

保持温度对偏轴磁控溅射法制备BiFeO3薄膜结构和性能的影响

本文采用偏轴磁控溅射方法在Pt/TiO2/SiO2/Si(111)基片上制备了多晶BiFeO3(BFO)薄膜,并构架了Pt/BFO/Pt异质结电容器。利用X射线衍射(XRD)、铁电测试仪等手段研究了保持温度对BFO薄膜结构和性能的影响。XRD图谱表明制备的BFO薄膜均为多晶结构,在保持温度400℃±2℃的区间内得到的BFO薄膜不含明显杂相,其它的温度均有明显的杂相。在保持温度为400℃时得到了较为饱和的电滞回线,在900 nm厚度的情况下,剩余极化强度仍可以达到Pr>40μC/cm2,达到了实际应用的要求Pr>10μC/cm2。漏电流拟合机制表明在低场下属于欧姆机制,在高场下比较接近空间电荷限制电流(SCLC)机制。     

飞秒激光精细加工含能材料

介绍了飞秒激光脉冲特点及其与物质相互作用机理, 论述了飞秒激光微加工含能材料技术特点及优势, 综述了飞秒激光加工含能材料技术及发展. 讨论了飞秒激光加工含能材料技术进一步发展所需的实验与理论研究工作以及相应的研究方案和关键技术. 关键词： 飞秒激光微加工 含能材料 冲击温度 冲击压强     

基底温度对α-C:H膜微观结构的影响

使用RF-PECVD法分别在基底温度为60℃、120℃和200℃的N型单晶锗表面制备了α-C:H膜,采用拉曼光谱、傅里叶变换红外吸收光谱和原子力显微镜等技术手段研究分析了α-C:H膜的价键组成及表面形貌,讨论了基底温度对α-C:H膜微结构及部分性能的影响。结果表明,在α-C:H膜沉积过程中,基底温度对膜层微观结构有较大影响,基底温度60℃时,膜层表面光滑、致密无石墨化现象。随着基底温度的升高,α-C:H膜中含H量和微晶石墨量逐渐增多,α-C:H膜层性能也逐步退化。     

The dynamic compensation temperature in a kinetic spin-5/2 Ising model on a hexagonal lattice

We present a study of the dynamic behavior of a two-sublattice spin-5/2 Ising model with bilinear and crystal-field interactions in the presence of a time-dependent oscillating external magnetic field on alternating layers of a hexagonal lattice by using the Glauber-type stochastic dynamics.The lattice is formed by alternate layers of spins σ=5/2 and S=5/2.We employ the Glauber transition rates to construct the mean-field dynamic equations.First,we investigate the time variations of the average sublattice magnetizations to find the phases in the system and then the thermal behavior of the dynamic sublattice magnetizations to characterize the nature(first-or second-order) of the phase transitions and to obtain the dynamic phase transition(DPT) points.We also study the thermal behavior of the dynamic total magnetization to find the dynamic compensation temperature and to determine the type of the dynamic compensation behavior.We present the dynamic phase diagrams,including the dynamic compensation temperatures,in nine different planes.The phase diagrams contain seven different fundamental phases,thirteen different mixed phases,in which the binary and ternary combination of fundamental phases and the compensation temperature or the L-type behavior strongly depend on the interaction parameters.     

Density-functional theory study of the effect of pressure on the elastic properties of CaB6

Under high pressure, the long believed single-phase material CaB6 was latterly discovered to have a new phase tI56. Based on the density-functional theory, the pressure effects on the structural and elastic properties of CaB6 are obtained. The calculated bulk, shear, and Young's moduli of the recently synthesized high pressure phase tI56-CaB6 are larger than those of the low pressure phase. Moreover, the high pressure phase of CaB6 has ductile behaviors, and its ductility increases with the increase of pressure. On the contrary, the calculated results indicate that the low pressure phase of CaB6 is brittle. The calculated Debye temperature indicates that the thermal conductivity of CaB6 is not very good. Furthermore, based on the Christoffel equation, the slowness surface of the acoustic waves is obtained.     

Influences of high-temperature annealing on atomic layer deposited Al2 O3/4H-SiC

High-temperature annealing of the atomic layer deposition (ALD) of Al2O3 films on 4H-SiC in O 2 atmosphere is studied with temperature ranging from 800℃ to 1000℃. It is observed that the surface morphology of Al2O3 films annealed at 800℃ and 900℃ is pretty good, while the surface of the sample annealed at 1000℃ becomes bumpy. Grazing incidence X-ray diffraction (GIXRD) measurements demonstrate that the as-grown films are amorphous and begin to crystallize at 900℃. Furthermore, C-V measurements exhibit improved interface characterization after annealing, especially for samples annealed at 900℃ and 1000℃. It is indicated that high-temperature annealing in O2 atmosphere can improve the interface of Al2O3 /SiC and annealing at 900℃ would be an optimum condition for surface morphology, dielectric quality, and interface states.