瞬态电阻法测量材料热导率

1介质中发热导体的电阻温度关系 导体电阻与温度的函数关系为：     

测定金属电阻温度系数的方法研究

从金属电阻率与温度的线性关系出发,设计了测定金属电阻温度系数的实验方案。利用基本的电磁学仪器和热学仪器组合进行实验,以漆包铜线作为待测金属丝测定出铜的电阻温度系数,分析了导致系统误差产生的主要原因,并就待测金属丝的选取原则、温度控制的方法进行了讨论。     

相位延迟器在四频激光陀螺中的应用研究

介绍了典型相位延迟器1／4波片和90°相位延迟膜的工作原理,定义了四频激光陀螺输出信号解调信噪比,分析了相位延迟量对其造成的影响,并就此结果进行了MATLAB仿真。从两种相位延迟器的工作原理出发,阐述了温度、入射角、入射光波长等因素对两者相位延迟量的影响。结合激光陀螺在实际应用中的要求,对两者进行了比较,并得出结论：90°相位延迟膜更适合作为四频激光陀螺输出解调系统中的相位延迟器。     

考虑最佳入口温度的多股流换热器网络循环优化

针对于多股流换热器网络的应用优势,本文在衍生网络优化方法基础上,提出了考虑最佳入口温度的多股流换热器循环优化方法,即利用多股流换热器网络小面积换热器合并而不产生固定投资费用这一特点,将优化结果中存在公用工程的流体返回到另一种流体的入口并与其入口流体进行循环优化。结果表明,这种优化方法能够进一步发挥多股流换热器网络的优点,得到年综合费用更小、运行费用更低的网络结构。     

Charged Fermions Tunneling from a Rotating Charged Black Hole in 5-Dimensional Gauged Supergravity

Recent research shows that Hawking radiation from black hole horizon can be treated as a quantum tunneling process, and fermions tunneling method can successfully recover Hawking temperature. In this tunneling framework, choosing a set of appropriate matrices γ^μ is an important technique for fermions tunneling method. In this paper, motivated by Kerner and Man＇s fermions tunneling method of 4 dimension black holes, we further improve the analysis to investigate Hawking tunneling radiation from a rotating charged black hole in 5-dimensional gauged supergravity by constructing a set of appropriate matrices γ^μ for general covariant Dirac equation. Finally, the expected Hawking temperature of the black hole is correctly recovered, which takes the same form as that obtained by other methods. This method is universal, and can also be directly extend to the other different-type 5-dimensional charged black holes.     

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以碰撞为能量交换机制,按局部热力学平衡近似处理低气压等离子体,并考虑辉光放电二极之间的电位分布,得到了电子密度与气体压力的关系和电子温度与电场强度的关系。提出了一种利用压强、电压和电流就获得电子温度和密度的诊断方法。用Langmuir探针方法验证了获得的结果。     

Noise Effects on Temperature Encoding of Neuronal Spike Trains in a Cold Receptor

We examine how noise interacts with encoding mechanisms of neuronal stimulus in a cold receptor. From ISI series and bifurcation diagrams it is shown that there are considerable differences in interval distributions and impulse patterns caused by purely deterministic simulations and noisy simulations. The ISI-distance can be used as an effective and powerful way to measure the noise effects on spike trains of the cold receptor quantitatively. It is also found that spike trains observed in cold receptors can be more strongly affected by noise for low temperatures than for high temperatures in some aspects; meanwhile, the spike train has greater variability with increasing noise intensity.     

Van der Pauw Hall Measurement on Intended Doped ZnO Films for p-Type Conductivity

A Van der Pauw Hall measurement is performed on the intended doped ZnO films （Na doped ZnO） grown by using the molecular beam epitaxial method. All as-grown samples show n-type conductivity, whereas the annealed samples （annealing temperature 900℃） show ambiguous carrier conductivity type （n- and p-type） in the automatic Van der Pauw Hall measurement. A similar result has been observed in Li doped ZnO and in as-doped ZnO films by other groups before. However, by tracing the Hall voltage in the Van der Pauw Hall measurement, it is found that this alternative appearance of both n- and p-type conductivity is not intrinsic behavior of the intended doped ZnO films, but is due to the persistent photoconductivity effect in ZnO. The persistent photoconductivity effect would strongly affect the accurate determination of the carrier conductivity type of a highly resistive intended doped ZnO sample.     

Temperature- and Frequency-Dependent Dielectric Properties of La1.5Sr0.5NiO4-δ

We report the temperature-dependent resistivity and dielectric function （1 kHz- 3 MHz） of a charge ordering system La1.5Sr0.5NiO4-δ. The primary data of ac impedance was measured by a four-terminal pair arrangement. Above 180K, the resistivity is independent of frequency. At lower temperatures, the dielectric function couM not be fitted by a Debye model with a single relaxation time, it should have a distribution. At T = 130 K, there is a sudden increase in the p - T relation, meanwhile an anomaly dielectric response occurs on the temperature dependant dielectric spectrum in the whole measured frequency range, in which the dielectric constant has a high value even at high frequency region. Our analysis suggests that the current system would be more consistent with the Zener polaron model.     

Numerical Study on Open-Circuit Voltage of Single Layer Organic Solar Cells with Schottky Contacts: Effects of Molecular Energy Levels, Temperature and Thickness

We numerically investigate the effects of the exciton generation rate G, temperature T, the active layer thickness d and the position of LUMO level EL related to the cathode work function Wc at a given energy gap on the opencircuit voltage Voc of single layer organic solar cells with Schottky contact. It is demonstrated that open-circuit voltage increases concomitantly with the decreasing cathode work function Wc for given anode work functions and exciton generation rates. In the case of given cathode and anode work functions, the open-circuit voltage first increases with the exciton generation rate and then reaches a saturation value, which equals to the builtin voltage. Additionally, it is worth noting that a significant improvement to Voc could be made by selecting an organic material which has a relative high LUMO level （low ｜EL｜ value）. However, Voc decreases as the temperature increases, and the decreasing rate reduces with the enhancement of exeiton generation rate. Our study also shows that it is of no benefit to improve the open-circuit voltage by increasing the device thickness because of an enhanced charge recombination in thicker devices.