Study on the in—plane electrical resistivity and thermoelectric power in single crystals of La2—xBaxCuO4

The in-plane electrical resistivity and thermoelectric power have been measured on single crystals of La_2-xBa_xCuO₄ at around x=0.125. The room temperature resistivity and thermopower have their maximum values at x=0.125, indicating that the carrier concentration is the minimum and the carriers are most strongly localized at x=0.125. The observed semiconductor-like behaviour can be well described by the weak-localized quasi-two-dimensional state. The steep rise in electric resistivity of the sample at x=0.125 below 70K is attributed to the formation of static stripe-order of holes and spins, which are pinned by the low-temperature tetragonal (LTT) structure, as discovered in La_1.48Nd_0.4Sr_0.12CuO₄. The temperature dependence of electric resistivity below 70K is still well described by the formula ρ∝ lnT. A definite change in the slope of thermopower is observed at the low-temperature orthorhombic-LTT structural phase transition temperature. The origin of the 1/8 anomaly is discussed in the text.     

非晶态锂离子导体B2O3-0.7Li2O-0.7LiCl-xAl2O3-0.1V2O5的电学性质和电子自旋共振研究

对两种非晶态B₂O₃-0.7Li₂O-0.7LiCl-xAl₂O₃-0.1V₂O₅(x=0.05和0.15),用差热分析、电导率测量、X射线衍射和电子自旋共振进行研究,发现:1)V₂O₅不仅作非晶网络形成剂,而且改变了晶化过程;2)对B₂O₃-Li_{2关键词：}     

NASICON型化合物结构的NMR研究

在水热晶化合成一系列NASICON型化合物的基础上,应用固体高分辨³¹P和²⁹Si MAS NMR,研究了几种NASICON化合物的结构,观察其骨架原子P和Si在结构中的状态及分布,并解释了由于在结构中发生取代作用而引起,Si或P的化学位移的变化.     

热漫散射贡献的高能电子衍射吸收结构因子的Doyle—Turner解析表达

给出了一种数值计算高能电子衍射吸收结构因子的方法，并利用模拟退火结合保温相变以及线性最小二乘拟合等算法，对所计算的吸收结构因子数值进行了含１０个参数的Ｄｏｙｌｅ－Ｔｕｒｎｅｒ解析表述的拟合，作为示例，给出Ｂｅ，Ａｌ，Ａｓ，Ａｇ，Ａｕ等５个元素的拟合结果和精度，并作出Ａｌ的绝对偏差量和相对偏差量曲线。     

电子与原子、离子碰撞过程的相对论效应

在玻恩近似下,建立了高能电子与原子、离于非弹性碰撞过程的相对论性理论计算方法,并以类Li等电子系列为例,阐明了电子与原子、离子非弹性碰撞过程的相对论效应.它包括:1.靶原子的相对论效应,它随原子序数的增加而增大.低z靶(如Li)的相对论效应可以忽略;对Au~(+76)靶的2_3—3p跃迁,广义振子强度相对论性计算值比相应的非相对论性值小27.1%.2.入射电子的相对论效应,它随入射电子能量的增加而增大.对高能入射电子,在特殊角度,要考虑广义振子强度横场项对微分截面的影响.在极端相对论情况下,如入射电子动能 关键词：     

Thermal Rate Constants of the N（^4S）＋O2（X^3∑g^-） → NO（X^2Ⅱ） ＋O（^3P） Reaction on the ^2A′ Potential Energy Surface

A quasiclassical trajectory study with the sixth-order explicit symplectic algorithm for the N（^4S）＋O2（X^3∑g^-） → NO（X^2Ⅱ） ＋O（^3P） reaction has been reported by employing a new ground potential energy surface. We have discussed the influence of the relative translational energy, the vibrational and rotational levels of O2 molecules on the total reaction cross section. Thermal rate constants at temperatures 300, 600, and 1000 K determined in this work for the reaction are 4.4 × 10^7, 1.8 × 10^10, and 3.1 × 10^11 cm^3mol^-1s^-1, respectively. It is found that they are in better agreement with the experimental data than previous theoretical values.     

Effect of Hydrogen Implantation on SIMOX SOI Materials

Hydrogen ions were implanted into separation by implantation of oxygen (SIMOX) silicon-on-insulator (SOI) wafers near the oxygen-implantation-induced damage peak under different conditions of energy and dose. It was found that the implanted hydrogen ions not only accelerate the diffusion of oxygen atoms from the annealing ambience into the wafer but also cause an outward diffusion of oxygen atoms in the buried oxide (BOX) layer. Thus, greatly broadened buried oxygen-rich (BOR) layers were formed in our experiments, which are 18%-79% broader than the BOX layer of standard SIMOX SOI wafers under the same conditions of oxygen implantation. The mechanism was discussed. A potential low cost method to fabricate SIMOX SOI wafers is proposed.     

Yb:FAP和Yb:C3S2-FAP晶体光谱的温度特性和选择激发

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