The promoting role of minor amount of water in solvent-free hydrogenation of halogenated nitrobenzenes

This study shows that minor amount of water plays a very important role in solvent-free hydrogenation of halogenated nitrobenzenes. For dried sponge Pd, the reaction cannot occur in the absence of water. For Pd/C catalyst, minor amount of water reduces the induction time, increases the reaction rate and reaction TOFs. Water might enhance the diffusion, adsorption and dissociation of H2 on Pd catalysts.     

Influence of Gd doping on the absolute quantum efficiency and lifetime of EuxGd1-x（TTA）3phens

Absolute quantum yield （Ф） is one of the most important parameters to evaluate the potential of novel materials. Lanthanide complexes EuxGd1-x（TTA）3phens are synthesized with the ratio of Gd3＋ dopant concentration ranging from 10% to 90% to improve the absolute quantum yield. EuxGd1-x（TTA）3phens possess similar infrared and ultraviolet spectra, showing that they have similar molecular structures. The absolute emission quantum yields of EuxGd1-x（TTA）3phens are determined using a fluoromax-4 spectrofluorometer equipped with an integrating sphere. The fluorescence lifetimes of the EuxGd1-x（TTA）3phens are measured in the same experiment. It was found that both absolute quantum yields and fluorescence lifetimes of EuxGd1-x（TTA）3phens are of quasi-periodic variation with the change of the Gd3. dopant concentrations. The absolute quantum efficiency and fluorescence lifetime vary with respect to the Gd content in an opposite fashion, indicating that the rate of energy absorption by the EuxGd1-x（TTA）3phens and the conversion to light energy is critical for the absolute quantum efficiency. The radiative rate constant Kr and non-radiative rate constant Knr are calculated. The dependence of Kr and Knr on the Gd3＋ dopant concentrations is very similar to that of absolute quantum efficiency. The radiation rate constant Kr and absolute quantum efficiency have a linear relationship.     

The effects of ultrasound frequency and power on the activation energy in Si-KOH reaction system

The activation energy is the minimum amount of energy required to initiate a reaction. It is one of the important indexes for appraising a reaction. The chemical reaction rate is closely related to the value of activation energy, and reducing activation energy is propitious to promoting a chemical reaction. In the present paper, the relationship between the activation energy in Si-KOH reaction system and the ultrasound frequency and power has been discussed for the first time. The range of ultrasound frequency and power is 40-100kHz （interval by 20kHz） and 10-50W （interval by 10W）, respectively. The experimental clata indicate that the activation energy decreases with the increasing ultrasound power. Comparing with the activation energy without ultrasound irradiation, the results in our paper indicate that ultrasound irradiation could reduce the activation energy in Si-KOH reaction system and increase the reaction rate.     

How polydispersity of network polymers influences strain-induced crystal nucleation in a rubber

Network polymers in a rubber or a gel often contain non-uniform chain lengths. By means of dynamic Monte Carlo simulations of polymer mixtures with various compositions of two chain lengths, we investigated how the factor of polydispersity influences their strain-induced crystal nucleation. Under a high temperature and a high strain rate, the stretching of both polymers revealed that crystal nucleation is mainly accelerated by the presence of short-chain polymers; nevertheless, both polymers join together in the nucleation process. Further analysis proved that crystal nucleation is initiated from those highly stretched short segments, which are rich on the short-chain polymers.     

基于FeWOx/SiO2载氧体的甲烷化学链部分氧化反应

甲烷具有价格低廉且储量丰富的优点,因此将甲烷转化为合成气(一种H2:CO为2的混合物),从而进一步合成有价值的化学品和液体燃料引起了人们的极大关注.化学链甲烷部分氧化(CLPOM)技术能避免甲烷与空气直接接触而引起爆炸的危险,可以降低后续对合成气与氮气分离操作所带来的费用,因此日益受到关注.CLOPM过程主要分为两步:第一步,CH4被载氧体所携带的氧部分氧化,载氧体被还原;第二步,利用氧化剂(例如空气)将被还原的载氧体再氧化恢复.因此,载氧体在CLOPM过程中起到至关重要的作用.载氧体的选择主要存在两个问题:(1)甲烷被活化所产生含碳产物的能力与晶格氧的给氧能力不匹配所带来的严重碳沉积;(2)金属离子间扩散速率不匹配而造成载氧体在氧化还原过程中结构的不可逆变化.基于上述两个问题,本文设计了FeWOx/SiO2载氧体用于CLPOM.与未改性的WO3/SiO2载氧体相比,甲烷的转化率和合成气的收率都有显著提高.FeWOx/SiO2在900℃、1 atm反应条件下表现出62%的甲烷转化率、93%的CO气相选择性、94%的H2选择性和2.4的H2/CO比值,同时在50个循环中表现出优异的催化活性和稳定性.本工作利用CH4脉冲反应研究了FeWOx/SiO2的甲烷表面反应过程;采用CH4-TPR和H2-TPR相结合探究了甲烷活化速率与晶格氧扩散速率之间的关系;通过XPS和XRD对FeWOx/SiO2在氧化还原过程中的结构稳定性进行了探讨.综合上述实验结果,对FeWOx/SiO2应用于CLPOM的反应机理进行了阐述.H2-TPR结果表明,在FeWOx/SiO2中,相较于Fe2O3/SiO2,Fe-O的活性受到抑制,使其更倾向于与甲烷发生部分氧化反应;相较于WO3/SiO2,W-O的活性得到明显提升,因此更多的晶格氧可以参与到部分氧化反应中来氧化积碳,从而使合成气收率大幅度提升.从CH4-TPR结果可以看出,对于FeWOx/SiO2,CO与H2的生成温度最接近,意味着晶格氧的传输速率较快并且能够与甲烷活化产生含碳中间物种的速率相匹配,将其及时氧化生成CO,避免由于积碳造成的催化剂失活.结合XPS和XRD结果可以得出,在甲烷还原过程中,FeWOx经历一步还原形成Fe-W合金,由于其间存在强相互作用,因而抑制了还原过程中催化剂相分离现象的发生.同时,根据铁钨离子在空气条件下扩散速率的公式计算可以得出,其相近的离子氧化速率也保证了在氧化过程中催化剂结构的稳定性.本工作为进一步构建用于甲烷化学链部分氧化制合成气的复合金属氧化物载氧体提供了研究思路.     

流动注射-分光光度法用于固-液吸附体系表观吸附速率常数测定

利用流动注射分析技术具有定时、定量取样、耗样量少、系统稳定性高等特点,将流动注射-光度检测法应用于固-液吸附体系的动力学研究中,结合固-液界面吸附动力学方程,测定固-液吸附体系表观吸附速率常数,作为一种新的动力学研究手段和方法,应用于物理化学的实验教学中。     

热塑性塑料熔体质量流动速率测量不确定度的评定

以聚乙烯为例讨论了热塑性塑料熔体质量流动速率测量不确定度的来源,依据JJF 1059-1999对熔体流动速率测试过程中的测量不确定度分量进行了分析和评定。7149型聚乙烯熔体质量流动速率测量结果的扩展不确定度为0.096 g/(10 m in)。     

H原子与CH3NH2抽氢反应的动力学计算

用QC ISD(T)/6-311 G(3DF,3PD)/MP2/6-311G(D,P)方法研究了H原子与CH3NH2的抽氢反应过程。该反应包含两个反应通道:H分别从CH3基团(R1)和NH2(R2)基团上抽氢。R1势垒比R2势垒低3.42kJ/mol,表明R1是主反应通道。在从头算的基础上,用变分过渡态理论(CVT)加小曲率隧道效应(SCT)研究了各反应温度范围为200~4000K内的速率常数,所得结果与实验值符合的很好。动力计算表明,在所研究的温度范围内,变分效应对速率常数的计算影响不大,而在低温范围内,隧道效应起了很重要的作用。     

磨料形貌及分散介质对4H碳化硅晶片研磨质量的影响研究

研磨作为4H碳化硅(4H-SiC)晶片加工的重要工序之一,对4H-SiC衬底晶圆的质量具有重要影响。本文研究了金刚石磨料形貌和分散介质对4H-SiC晶片研磨过程中材料去除速率和面型参数的影响,基于研磨过程中金刚石磨料与4H-SiC晶片表面的接触情况,推导出简易的晶片材料去除速率模型。研究结果表明,磨料形貌显著影响4H-SiC晶片的材料去除速率,材料去除速率越高,晶片的总厚度变化(TTV)越小。由于4H-SiC中C面和Si面的各向异性,4H-SiC晶片研磨过程中C面的材料去除速率高于Si面。在分散介质的影响方面：水基体系研磨液的Zeta电位绝对值较高,磨料分散均匀,水的高导热系数有利于控制研磨过程中的盘面温度;乙二醇体系研磨液的Zeta电位绝对值小,磨料易发生团聚,增大研磨过程的磨料切入深度,晶片的材料去除速率提高,晶片最大划痕深度随之增大。     

基于简单碰撞理论煤粉燃烧动力学模型的研究-PART Ⅲ:氧气可达比表面积

根据不同温度下氧分子平均自由程的大小,比较了小孔、中孔和大孔中三种扩散速率与煤焦表面燃烧速度的大小.研究表明2000 K以内,颗粒表面分子扩散速率比氧化反应速率大1个数量级以上,过度扩散速率不小于氧化速率.温度小于1200K时,燃烧速率比Knudsen扩散速率小1～5个数量级,扩散孔径小于15～28 nm,反应主要在内外表面进行;1200～1600K时,燃烧速率与Knudsen扩散速率相当,扩散临界孔径28～38 nm,反应在外表面及浅层内表面进行;温度1600K以上时,Knudsen扩散速率比燃烧速率小1个数量级,孔径38～50 nm以下内表面上碳的氧化速度受扩散控制.煤焦的氧化主要发生在Knudsen扩散临界孔径10～50 nm以上的氧气可达表面上.