Effect of Different Substrate Temperature on Phosphorus-Doped ZnO Thin Films Prepared by PLD on Sapphire Substrates

Phosphorus-doped ZnO （ZnO：P） thin films are deposited on a c-plane sapphire in oxygen at 350℃, 450℃, 550℃ and 650℃, respectively, by pulsed laser deposition （PLD）, then all the ZnO：P samples are annealed at 650℃ in oxygen with a pressure of 1 × 10^5 Pa. X-ray diffraction measurements indicate that the crystalline quality of the ZnO：P thin films is improved with the increasing substrate temperature from 350℃ to 550℃. With a further increase of the deposition temperature, the crystalline quality of the ZnO：P sample is degraded. The measurements of low-temperature photoluminescence spectra demonstrate that the samples deposited at the substrate temperatures of 350℃ and 450℃ show a strong acceptor-bound exciton （A^0X） emission. The electrical properties of ZnO：P films strongly depend on the deposition temperature. The ZnO：P samples deposited at 350℃ and 450℃ exhibit p-type conductivity. The p-type ZnO：P film deposited at 450℃ shows a resistivity of 1.846Ω·cm and a relatively high hole concentration of 5.100 × 10^17 cm^-3 at room temperature.     

Intrinsic Bistability and Critical Slowing in Tm^3＋/Yb^3＋ Codoped Laser Crystal with the Photon Avalanche Mechanism

We present theoretically a novel intrinsic optical bistability （IOB） in the Tm^3＋ /Yb^3＋ codoped system with a photon avalanche mechanism. Numerical simulations based on the rate equation model demonstrate distinct 10B hysteresis and critical slowing dynamics around the avalanche thresholds. Such an 10B characteristic in Tm^3＋ /Yb^3＋ eodoped crystal has potential applications in solid-state bistable optical displays and luminescence switchers in visible-infrared spectra.     

Effect of Vacuum on the Laser-Induced Damage of Anti-Reflection Coatings

In the comparison of damage modifications, absorption measurement and energy dispersive x-ray analysis, the effect of vacuum on the laser-induced damage of anti-reflection coatings is analyzed. It is found that vacuum decreases the laser-induced damage threshold of the films. The low laser-induced damage threshold in vacuum environments as opposed to air environments is attributed to water absorption and the formation of the O/Si, O/Zr sub-stoichiometry in the course of laser irradiation.     

立式螺旋管汽液两相流沸腾传热恶化实验研究

本文实验研究了低质量流速(500～800 kg·m~(-2)·s~(-1))下的立式螺旋管临界热负荷,对沸腾传热恶化壁温特性和螺旋管临界热负荷影响因素进行分析.并同前人工作汇总,以流量,压力和临界干度为参数,建立了基于局部条件假设的立式螺旋管临界热负荷查询表(Look-Up-Table),共272个点.压力范围6.5～21 MPa,质量流速范围500～1800 kg·m~(-2)·s~(-1).     

准分子激光全固态脉冲电源设计与实验研究

针对脉冲能量5~8 mJ的ArF准分子激光器,设计了基于可控硅开关结合三级磁脉冲压缩开关的全固态脉冲电源,采用国产可控硅和磁开关材料,获得了上升时间约150 ns,电压10~14 kV,传递能量0.35~0.68 J的激励脉冲,并实现了对准分子激光器快放电激励。三级磁开关总效率35%,分析表明磁开关损耗较大主要原因为电容能量转移不充分、导线铜损及磁芯材料铁损较大,并提出了相应改进办法。     

相干多普勒测风激光雷达

 鉴于多普勒测风激光雷达在航空航天、遥感遥测、气象观测等军事及民用领域中的广泛应用,结合相干探测工作原理,介绍了国外几种典型波段相干多普勒测风激光雷达系统,重点分析了激光发射机/接收机、空间扫描、数据处理等关键技术,并对相干多普勒激光雷达的广阔应用前景进行了展望。指出国内相干多普勒测风激光雷达研究已取得的一些重要进展。     

ITER超导纵场线圈内馈线系统传热分析

ITER超导纵场线圈内馈线系统位于主机杜瓦内,由18个盒体分别悬挂于相应纵场磁体终端,通过连接件组成多边形环。通过对内馈线在整个装置降温收缩过程的分析,采用有限元分析法对内馈线稳态及瞬态温度场进行数值模拟,得到内馈线的热负荷值、温度分布、温度及变形的时间历程曲线,为内馈线冷却方案的确定和降温时间的预测等提供了可靠验证。     

激光监听实验的开设与研究

本文介绍了综合、设计性实验——激光监听实验的开设过程,以及对影响实验效果若干因素的研究。     

日本热核研究突破

日本文部科学省热核科学研究所2月19日宣布,该所研究人员6日用大型螺旋装置把离子温度为8100万度的等离子体在磁场中成功封闭0.5秒钟,从而向在地球上实现热核聚变大大前进了一步。大型螺旋装置是一种使用螺旋超导线圈产生磁场的装置,该研究所的螺旋装置目前是世界上最大的。热核科学研究所实验推进总部部长松冈启介说,要在地球实现热核聚变,必须具备4个条件:离子温度1亿度、电子温度1亿度、电子密度每立方厘米100万亿个、封闭时间为1秒钟。     

离焦量对空气中激光诱导铜等离子体光谱特性的影响

利用Nd: YAG脉冲激光在空气中烧蚀金属Cu靶,获得等离子体光谱;采用改变离焦量的方法,研究了离焦量的变化对谱线结构及谱线强度的影响;分析了离焦量分别为1mm、0mm和-2mm时,沿靶面法线方向不同空间距离处电子温度的演化规律;并对等离子体光谱的特性和产生机制进行了讨论. 结果表明,谱线结构、谱线强度和等离子体的电子温度都与离焦量的变化密切相关,聚焦点在-2mm处CuⅠ谱线相对强度出现峰值,电子温度数值最大;聚焦点在-0.5mm和-1.0mm附近谱线相对强度遽然降低的现象是由于等离子体的屏蔽效应造成的.