一类(0,1)-矩阵的最大积和式的积分表达式

给出了线和n-2的n阶（0，1）－矩阵的最大积和式的积分表达式，并证明了该积分表达式与[1]得到的组合表达式等价。     

基于液晶光阀的全息照相控光仪

设计了通过液晶光阀自动调整全息照相物光和参考光辐照比至最佳状态,同时能实现曝光时间自动控制的控光仪.该仪器巧妙运用液晶光阀和硅光电池器件,使测量、调整、自控一体化,从而提高拍摄优质全息图的工作效率.     

碳纳米管被“激光镊子”牵鼻走

~~碳纳米管被“激光镊子”牵鼻走@汪道友~~     

NEW WAVELET BASES FOR NON－HOMOGENEOUS SYMBOLIC SPACE OpS1,1^m AND RELATED KERNEL－DISTRIBUTION SPACES

This paper constructs several classes of new wavelet bases, which are unconditional bases for related operator spaces. Using these bases, the author analyzes non-homogeneous symbolic space OpSm1,1 and two related kernel-distribution spaces, and characterizes them in two wavelet coefficients spaces. Besides, some properties for singular integral operators are studied.     

微振动光电检测与数据采集系统的设计

提出了一种新的光学非接触式测量方法测量了物体的微振动振幅。用激光作为光源,以四象限硅光电池[1]作为光电探测器,借助三角测量原理,投射在振动源表面的激光反射光束在光电探测器上产生平面位移,将位移信号放大,通过A/D模块采集电压数值,并通过串口通信机制在PC终端实时显示。实验结果表明,该方法原理正确,灵敏度高,便于实现连续、快速、自动化检测,在工业在线检测方面具有良好的应用前景。     

基因芯片荧光图象采集与分析

描述了基因芯片荧光图象的光学共聚焦成象,大范围高速扫描与控制,数据采集的原理和方法.并讨论了基因芯片荧光图象的分析算法,即模板定位与阈值分割相结合的半自动算法,并将其计算结果与完全采用人工分割算法的结果进行了比较.     

Structural and Electrical Characteristics of Pb（Zr0.53,Ti0.47）O3 Thin Films Deposited on Si （100） Substrates

Pb(Zr0.53, Ti0.47)O3 (PZT) films were directly deposited on Si substrates without a buffer layer by pulsed laser deposition. Only(110)-oriented PZT peaks (other than Si substrate peaks) were observed from the XRD data. The electrical properties of the PZT/Si capacitor were characterized in terms of both the capacitance versus voltage (C-V) and current versus voltage (I-V) measurements. The clockwise trace of the C-V curve shows ferroelectric polarization switching, as is expected. From the I-V curves, the Schottky emission and spacecharge-limited-current behaviour are found to be the mainly leakage current mechanism in a certain electric field range in the negative and positive bias, respectively.     

The Design for Automation of Pellet-Forming Process in HL-2A Pellet Fueling System

In the ever fusion experiments in SWIP, pellet forming process was carried out through adjusting relative devices by staff member in site, which will make every pellet-forming process slight distinction and will result in pellet difference in shape, size and intensity. In the intervals of HL-2A discharges, staff member have to go site to accomplish the pellet-forming process, this wastes human power and increase the potential danger. So it is necessary to develop a remote control system to perform the pellet-forming process. The control system needs have the features of real-time, reliability and be easy to operate and maintain.     

Fabrication of Dendrimer－like PAMAM Based on Silica Nanoparticles

A G 4.0 dendrimer-like poly (amido amine) (PAMAM) based on silica nanoparticles was fabricated via a divergent approach.It was built from γ-aminopropyi silica nanoparfides (APSN) core via repetitive addition of acrylate (MA) and hexylenediamine (HDA). FT-IR and EA were used to monitor the progress of dendrimer during each step. The amino group content of the resulting product increased from 0.49 to 3.72 mmol/g after the 4th generation. In addition, the percentage of grafting increased with increasing generation and reached to 65.9% after 4th generation. It was found that the resulting silica nanoparticles could be dispersed in methanol with a mean hydrodynamic particle diameter of 152.7 nm although the silica nanoparticles had agglomerated during the storage period.     

Deposition of Hydrogen-Free Silicon Nitride Thin Films by Microwave ECR plasma Enhanced Magnetron Sputtering at Room Temperature

Hydrogen-free silicon nitride （SiNx） films were deposited at room temperature by microwave electron cyclotron resonance （MW-ECR） plasma enhanced unbalance magnetron sputtering system. Both Fourier-transform infrared spectroscopy and x-ray photoelectron spectroscopy are used to study the bonding type and the change of bonding structures of the silicon nitride films. The results indicate that the chemical structure and composition of SiNx films deposited by this technique depend strongly on the N2 flow rates, the stoichiometric SiNx film, which has the highest hardness of 22.9 GPa, could be obtained at lower N2 flow rate of 4 sccm.