双扩散自然对流的格子Boltzmann模拟

建立了一个模拟双扩散自然对流系统的格子Boltzmann模型,用此模型对受温度和浓度梯度驱动的方腔流动进行了模拟,研究了浓度Rayleigh数对传热传质的影响,并与其它文献的结果进行了比较.     

三维方腔温盐双扩散的格子Boltzmann方法数值模拟

研究了温盐双扩散系统的多组分格子Boltzmann方法.通过对二维方腔的温盐双扩散系统的数值模拟，检验了方法的可行性及有效性，所得到的结果与差分法结果符合良好，继而将此方法推广到三维，建立了三维温盐双扩散系统的格子Boltzmann方法，对三维方腔双扩散问题进行了模拟和分析，并与差分法模拟的结果进行了比较，结果令人满意.最后，分析了格子Boltzmann方法在模拟双扩散对流问题时存在的局限性. 关键词： 格子Boltzmann方法 温盐双扩散 Boussinesq近似 数值模拟     

正交梯度下双扩散对流的数值模拟

本文采用有限单元法求解涡量、流函数、能量和组分控制方程,数值模拟了在温度梯度和浓度梯度正交情况下竖直环形容器内的双扩散对流结构。通过改变浮升力比N=GrS／GrT和Le数的大小,分析了溶质浮升力方向及其大小和Le数对容器内双扩散对流的影响。结果表明:当溶质浮升力改变时,壁面处的流体流动状况、边界层厚度、Nu数和Sh数都发生了变化;随着Le数的增大,竖直壁面处Nu数逐渐降低而水平壁面处的Sh数逐渐增大。     

地球物理流体动力学的发展和室内实验研究的影响

系统介绍了大气、海洋与新兴的地质系统中的流体力学,尤其是通过室内实验的研究进展．详细描述了诸如羽流、湍流、卷挟、异重流、海洋环流、混合层、双扩散、盐指、锋面、岩浆库、地幔对流、板块运动、热斑等有趣的地球物理现象,它们对于了解因浮力引起的对流的机理是十分重要的．同时在气候、环境、灾害、成矿等领域有广泛的应用．论文反映了在 Ｇ．Ｉ． Ｔａｙｌｏｒ, Ｇ．Ｋ． Ｂａｔｃｈｅｌｏｒ领导下剑桥研究组的风格──通过小型室内实验了解机理,再用应用数学方法求解问题,他们对流体力学的发展作出了重大贡献．     

竖直平板嵌入非Darcy多孔介质时,数值研究流过平板的不稳定MHD自然对流中的Dufour和Soret效应

就竖直平板嵌入非Darcy多孔介质中,导电流体流过平板时作不稳定的二维磁流体(MHD)双扩散对流,数值研究了Dufour和Soret效应对流动的影响.用Crank-Nicolson型的隐式有限差分法,按三对角矩阵处理,求解无量纲的非线性控制方程.详细地研究了问题中出现的各种参数对不稳定无量纲的速度、温度和浓度曲线的影响.进一步地,给出并分析了表面摩擦因数、Nus-selt数和Sherwood数随时间的变化.研究结果表明,不稳定速度、温度和浓度分布曲线,受Dufour和Soret的影响十分显著.随着Dufour数的增加或者Soret数的减小,表面摩擦因数和Sherwood数都在减小,而Nusselt数在增加.研究发现,当磁场参数增加时,边界层中的速度和温度在减小.     

Ultra-low specific on-resistance vertical double-diffused metal-oxide semiconductor with a high-k dielectric-filled extended trench

An ultra-low specific on-resistance trench gate vertical double-diffused metal-oxide semiconductor with a high-k dielectric-filled extended trench(HK TG VDMOS) is proposed in this paper.The HK TG VDMOS features a high-k(HK) trench below the trench gate.Firstly,the extended HK trench not only causes an assistant depletion of the n-drift region,but also optimizes the electric field,which therefore reduces Ron,sp and increases the breakdown voltage(BV).Secondly,the extended HK trench weakens the sensitivity of BV to the n-drift doping concentration.Thirdly,compared with the superjunction(SJ) vertical double-diffused metal-oxide semiconductor(VDMOS),the new device is simplified in fabrication by etching and filling the extended trench.The HK TG VDMOS with BV = 172 V and Ron,sp = 0.85 mΩ·cm2 is obtained by simulation;its Ron,sp is reduced by 67% and 40% and its BV is increased by about 15% and 5%,in comparison with those of the conventional trench gate VDMOS(TG VDMOS) and conventional superjunction trench gate VDMOS(SJ TG CDMOS).     

Low on-resistance high-voltage lateral double-diffused metal oxide semiconductor with a buried improved super-junction layer

A novel low specific on-resistance （Ron,sp） lateral double-diffused metal oxide semiconductor （LDMOS） with a buried improved super-junction （BISJ） layer is proposed. A super-junction layer is buried in the drift region and the P pillar is split into two parts with different doping concentrations. Firstly, the buried super-junction layer causes the multiple-direction assisted depletion effect. The drift region doping concentration of the BISJ LDMOS is therefore much higher than that of the conventional LDMOS. Secondly, the buried super-junction layer provides a bulk low on-resistance path. Both of them reduce Ron,sp greatly. Thirdly, the electric field modulation effect of the new electric field peak introduced by the step doped P pillar improves the breakdown voltage （BV）. The BISJ LDMOS exhibits a BV of 300 V and Ron,sp of 8.08 mΩ·cm2 which increases BV by 35% and reduces Ron,sp by 60% compared with those of a conventional LDMOS with a drift length of 15 μm, respectively.     

Partial-SOI high voltage laterally double-diffused MOS with a partially buried n~+-layer

A novel partial silicon-on-insulator laterally double-diffused metal-oxide-semiconductor transistor （PSOI LDMOS） with a thin buried oxide layer is proposed in this paper. The key structure feature of the device is an n＋-layer, which is partially buried on the bottom interface of the top silicon layer （PBNL PSOI LDMOS）. The undepleted interface n＋-layer leads to plenty of positive charges accumulated on the interface, which will modulate the distributions of the lateral and vertical electric fields for the device, resulting in a high breakdown voltage （BV）. With the same thickness values of the top silicon layer （10 p.m） and buried oxide layer （0.375 μm）, the BV of the PBNL PSOI LDMOS increases to 432 V from 285 V of the conventional PSOI LDMOS, which is improved by 51.6%.     

磁场对双扩散液层热毛细对流的影响

通过数值模拟的方法对磁场作用下的双扩散液层热毛细对流进行了研究, 模型中同时考虑了热毛细效应和溶质毛细效应的存在. 研究结果显示, 外部磁场能够有效削弱液层内热毛细对流的强度, 改变热毛细对流的对流结构; 随着磁场强度的增大, 液层内热毛细对流的对流强度逐渐减小, 热质传递过程中扩散效应逐渐得到增强; 最终, 溶质浓度沿水平方向呈梯度分布. 因此, 当磁场强度足够大时能够实现晶体生长中所需的纯扩散条件.     

热质双扩散与流固共轭传热及吸附的LBM模拟

采用格子Boltzmann方法,基于孔隙尺度,对填有均匀介质的复合方腔顶盖驱动双扩散混合对流及流固共轭传热、吸附进行数值模拟.在孔隙率ε=0.79,普朗特数Pr=0.7,格拉晓夫数Gr=10⁴和路易斯数Le=1.0时,就不同浮升力比（-100≤Br≤100）和吸附率常数（0.001≤k₁≤0.005）对方腔内部热质传输的影响进行比较.给出流线、等温线、等浓度线、平均努赛尔数Nu_av、舍伍德数Sh_av和吸附量等.结果表明Br通过改变介质所处流场的浓度分布影响吸附,而k₁的增加显著地提高吸附效率和吸附能力.