PECVDSiON薄膜的工艺控制,性质及其潜在应用

研究了等离子增强化学气相淀积氮氧化硅薄膜的工艺控制、性质以及薄膜波导在超大规模集成电路光互连中的潜在应用。     

酞菁钴薄膜的折射率及吸收特性

通过真空镀法在单晶硅片上制备了酞菁钴薄膜，在波长扫描和入射角可变全自动椭圆偏振光谱仪上研究了ＣｏＰｃ薄膜的椭偏光谱并分析了其电子结构。     

Multiple-State Storage Capability of Stacked Chalcogenide Films （Si16Sb33Te51/Si4Sb45Te51/Si11Sb39Te50） for Phase Change Memory

The multiple-state storage capability of phase change memory （PCM） is confirmed by using stacked chalcogenide films as the storage medium. The current-voltage characteristics and the resistance-current characteristics of the PCM clearly indicate that four states can be stored in this stacked film structure. Qualitative analysis indicates that the multiple-state storage capability of this stacked film structure is due to successive crystallizations in different Si-Sb-Te layers triggered by different amplitude currents.     

Experimental Studies on Thermal and Electrical Properties of Platinum Nanofilms

We experimentally studied the in-plane thermal and electrical properties of a suspended platinum nanofilm in thickness of 15 nm. The measured results show that the in-plane thermal conductivity, the electrical conductivity and the resistance-temperature coefficient of the studied nanofilm are much less than those of the bulk material, while the Lorenz number is greater than the bulk value. Comparing with the results reported previously for the platinum nanofilm in thickness of 28 nm, we further find that the in-plane thermal conductivity, the electrical conductivity and the resistance-temperature coefficient decrease with the decreasing thickness of the nanotilm, while the Lorenz number increases with the decreasing thickness of the nanofilm. These results indicate that strong size effects exist on the in-plane thermal and electrical properties of platinum nanofilms.     

Effects of Post-Thermal Treatment on Quality of SiC Grown by PVT Method

We report the effects of post-thermal treatment on the quality of 2-inch 6H-SiC wafer cut from a crystal boule grown by physical vapour transportation method. The full widths at half maximum of x-ray diffraction rocking curves measured on sites across the 2-inch wafer become narrower, indicating the quality improvement after a three-step post-thermal treatment. It is found that the most common defects such as micropipes and inclusions can be significantly reduced after the treatment. Our results show that the post-thermal treatment is an effective route to improve the quality of SiC single crystals.     

圆形振动膜ZnO压电微传声器的研制

本文介绍了一种新型圆形振动膜ZnO压电微传声器的制备，并对传声器制备的工艺过程进行了较为详细的描述。圆形振动膜的压电传卢器与以前方形振动膜结构设计相比，较大幅度提高了传声器的灵敏度和成品率，灵敏度达到-70dB（相对于1V／Pa），成品率达到80％。     

非晶态硒化镉薄膜瞬态光电特性

本文报道用真空热蒸发法淀积的非晶态硒化镉薄膜作光敏介质制备超快光电导探测器。用对撞脉冲锁模Nd:YAG激光器产生的超短光脉冲序列对探测器的响应时间进行检测,结果表明a-CdSe薄膜对皮秒(10^-12秒)级的超短光脉冲作用具有良好的瞬态响应光电特性,探讨a-CdSe薄膜快速弛豫过程的内在机理。