Transient and Stationary Simulations for a Quantum Hydrodynamic Model

The transient and stationary characteristics of a one-dimensional quantum hydrodynamic model are comparatively studied for semiconductor charge transport in a resonant tunnelling diode. When the bias is not small, our numerical results show a deviation of the asymptotic transient solutions from the stationary ones. A dynamic instability accounts for such deviation. The stationary quantum hydrodynamic model is therefore unsuitable in general for simulating quantum devices.     

Low Timing Jitter and Tunable Dual-Wavelength Picosecond Pulse Generation from a Fabry--Pérot Laser Diode with External Injection

A novel scheme to generate tunable dual-wavelength optical pulses with low timing jitter at arbitrary repetition rates is proposed and demonstrated experimentally. The pulses are generated from a gain-switched Fabry-Pérot laser diode with two external cw beams for injection seeding simultaneously. The cw light is generated by two independent distributed feedback laser diodes, and their wavelengths can be tuned independently by two temperature controllers. The dual-wavelength pulses with the pulse width of 57 ps, the timing jitter of 340 fs, are obtained. The sidemode-suppression ratio of the output pulses is better than 23dB over a 10-nm wavelength tuning range.     

Dynamics of Efficiency Change by Temperature in Diode Pumped Nd：YAG Heat Capacity Laser

We investigate the influence of temperature on the efficiency of diode pumped Nd：YAG heat capacity laser is studied. It is shown that the efficiency of such a laser system is greatly reduced at higher temperature. This bad behaviour is mainly caused by the doped-ion redistribution among various Stark levels of the ground state, and by a thermal equilibrium between the upper laser level and the pump level. Meanwhile, the thermal excitations from the ground state to the lower laser level also play a role. We derive a model to describe those effects, with the considerations of emission spectrum of laser diodes, the subtle Stark structures and the linewidth of absorption and of simulated-emission.     

Thermal Performance of Laser Diode Array under Constant Convective Heat Transfer Boundary Condition

Three-dimensional heat transfer model of laser diode array under constant convective heat transfer coefficient boundary condition is established and analytical temperature profiles within its heat sink are obtained by separation of variables. The influences on thermal resistance and maximum temperature variation among emitters from heat sink structure parameters and convective heat transfer coefficient are brought forward. The derived formula enables the thermal optimization of laser diode array.     

A Base-Emitter Self-Aligned Multi-Finger Sil-xGex/Si Power Heterojunction Bipolar Transistor

With a crystal orientation dependent on the etch rate of Si in KOH-based solution, a base-emitter self-Migned large-area multi-finger configuration power SiGe heterojunction bipolar transistor （HBT） device （with an emitter area of about 880μm^2） is fabricated with 2μm double-mesa technology. The maximum dc current gain is 226.1. The collector-emitter junction breakdown voltage BVcEo is 10 V and the collector-base junction breakdown voltage BVcBo is 16 V with collector doping concentration of 1 × 10^17 cm^-3 and thickness of 400nm. The device exhibited a maximum oscillation frequency fmax of 35.5 GHz and a cut-off frequency fT of 24.9 GHz at a dc bias point of Ic = 70 mA and the voltage between collector and emitter is VCE = 3 V. Load pull measurements in class-A operation of the SiGe HBT are performed at 1.9 GHz with input power ranging from OdBm to 21 dBm. A maximum output power of 29.9dBm （about 977mW） is obtained at an input power of 18.SdBm with a gain of 11.47dB. Compared to a non-self-aligned SiGe HBT with the same heterostructure and process, fmax and fT are improved by about 83.9% and 38.3%, respectively.     

Extended Measurement of the v2 (1- ←0+) Band of H3O+ by Mid-Infrared Diode Laser Spectroscopy

Twenty-five new R-branch lines of the v2（1^-← 0^＋） band of H3O^＋ are measured using diode laser velocity modulation spectroscopy between 1070 and 1230 cm^-1. The H3O^＋ ions are produced in a high voltage ac discharge with water diluted in helium. The observed lines together with all the previously published measurements are fit to the standard vibration-rotational Hamiltonian of an oblate symmetric top, yielding a set of improved molecular constants. All the sextic centrifugal distortion constants for both 0^＋ and 1^- states are determined precisely. The observed R（13, 0） transition is shifted about -0.129 cm^-1 from its calculated value, indicating that a near degeneracy exists between the （13, 0）^＋ and （13, 3）^- ground-state rotation-inversion levels.     

Hyperbolic Bending of Vortex Lines with Finite Number and Length in Rotating Trapped Bose-Einstein Condensates

The minimal energy configurations of hyperbolic bending vortex lines in the rotating trapped Bose-Einstein condensates are investigated by using a variational ansatz and numerical simulation. The theoretical calculation of the energy of the vortex lines as a function of the rotation frequency gives self-consistently vortex number, curvature and configuration. The numerical results show that bending is more stable than straight vortex line along the z-axis, and the vortex configuration in the xy-plane has a little expansion by increasing z.     

Diode End-Pumped Passively Q-Switched Nd^3＋：GdVO4 Self-Raman Laser at 1176 nm

A compact diode-end-pumped passively Q-switched Nd^3＋ ：GdVO4/C^r4＋ ：YAG self-Raman laser at 1176 nm is demonstrated. When the To = 80% Cr^4＋：YAG saturable absorber is inserted into the cavity, the maximum Rtaman laser output reaches 175 mW with 3.8 W incident pump power. The optical conversion from incident to the Raman laser is 4.6% and the slope efficiency is 6.5%. The pulse energy, duration, and repetition frequency of the first stokes laser are 4.5μJ, 1.8 ns, and 38.5 kHz, respectively. There is strong blue emission （about 350- 400nm） can be observed in the Nd^3＋ ：GdVO4 crystal when the process of stimulated Raman scattering occurs, which is induced by the upconversion of the Nd^3＋ ions.     

美国罗切斯特大学演示新型nBn红外探测器

美国纽约罗切斯特大学的研究人员演示了一种新型nBn中波红外探测器。与PN光电二极管相比，其暗电流更小，而工作温度更高。顾名思义，这种器件在2个N型半导体层中间夹着一个阻挡层。阻挡层降低了暗电流，钝化或保护了器件的激活层。     

高效液相色谱-光电二极管阵列检测器联用检测不同产地荆芥中乌索酸和齐墩果酸

建立反相高效液相色谱-光电二极管联用法同时测定了荆芥中乌索酸和齐墩果酸的含量。色谱柱为Kromasil C18柱(250mm×4.6mm,5μm),流动相为甲醇-水(86∶14),流速0.8mL.min-1,光电二极管阵列检测器(PAD),检测波长210nm,柱温25℃。在选定色谱条件下线性范围良好,乌索酸和齐墩果酸的样品加样回收率分别为98.6%和99.2%,RSD为1.1%和1.9%。方法简便,分离效果好,可用于荆芥中乌索酸和齐墩果酸含量的测定。