高温环境中光触发开关的设计

 针对在高温环境中测试仪器的供电方式问题,利用光敏二极管响应时间短并对光灵敏的优点,将其作为供电电源的开关,吸收高温辐射源发出的红外光信号,通过光电转换,使电源导通,达到开关的效果。文中阐述了这种光控的供电方式的理论依据和实现方式,排除了日光等因素的干扰,并对该方法进行了验证。通过试验证明,该方法操作简单,实用性强,很适用于一些不适合人为操作的场合。     

A1/Ti/4H-SiC Schottky barrier diodes with inhomogeneous barrier heights

This paper investigates the current-voltage （I-V） characteristics of Al/Ti/4H-SiC Schottky barrier diodes （SBDs） in the temperature range of 77 K-500 K, which shows that Al/Ti/4H SiC SBDs have good rectifying behaviour. An abnormal behaviour, in which the zero bias barrier height decreases while the ideality factor increases with decreasing temperature （T）, has been successfully interpreted by using thermionic emission theory with Gaussian distribution of the barrier heights due to the inhomogeneous barrier height at the A1/Ti/4H-SiC interface. The effective Richardson constant A＊ = 154 A/cm2 . K2 is determined by means of a modified Richardson plot In（I0/T2） - （qσ）2/2（κT）2 versus q/kT, which is very close to the theoretical value 146 A/cm2 · K2.     

High-power diode-end-pumped Tm：YAP and Tm：YLF slab lasers

Diode-end-pumped continuous-wave(CW) Tm:YAP and Tm:YLF slab lasers are demonstrated. The a-cut Tm:YAP and Tm:YLF slabs with doping concentrations of 4 at.-% and 3.5 at.-%,respectively,are pumped by fast-axis collimated laser diodes at room temperature. The maximum CW output powers of 72 and 50.2 W are obtained from Tm:YAP and Tm:YLF,respectively,while the pump power is 220 W,corresponding to the slope efficiencies of 37.9% and 26.6%,respectively.     

Study of diode-pumped Yb:YAG disk lasers at low temperature

A Yb:YAG disk laser with V-shaped stable resonator and active-mirror configuration,end-pumped by a 940-nm InGaAs laser diode array,is demonstrated.Performances and optimization of the disk laser at low temperature over a range of 130-200 K are investigated theoretically and experimentally.Laser output energy of 1.46 J/pulse operating at 10-Hz repetition rate is obtained with the optimum output coupler transmission of 30%,and the corresponding optical-to-optical efficiency is 48.7%.     

Modified adaptive algebraic tomographic reconstruction of gas distribution from incomplete projection by a two-wavelength absorption scheme

A modified adaptive algebraic reconstruction technique (MAART) with an auto-adjustment relaxation parameter and smoothness regularization is developed to reveal the tomographic reconstruction of H 2 O distribution in combustion from incomplete projections. Determinations of relaxation parameter and regularization factor are discussed with regard to the consideration of improvement in reconstruction and reduction of computational burden. A two-wavelength scheme from tunable diode laser absorption measurement, 7444.36 and 7185.59 cm 1 , is used to simplify the nonlinear solution problem for obtaining the tomographic distributions of concentration and temperature simultaneously. Results of calculations demonstrate that MAART can perform the reconstruction results more efficiently with little complex modification and much lower iterations as compared with the traditional algebraic reconstruction technique (ART) or simultaneous iterative reconstruction technique (SIRT) methods. The stability of the algorithm is studied by reconstruction from projections with random noise at different levels to demonstrate the dependence of reconstruction results on precise line-of-sight measurements.     

电磁驱动与电磁阻尼演示仪原理探究

将演示仪电磁驱动和电磁阻尼二者巧妙地结合起来,并利用单片机测量及数字化显示技术,更好地演示了电和磁这两种特殊物质抽象的物理本质和物理原理.     

用等效法测二极管的伏安特性

提出在测量二极管伏安特性实验性中，用等效的测量方法代替传统的内、外接法和电桥法。     

Reverse current reduction of Ge photodiodes on Si without post-growth annealing

A new approach to reduce the reverse current of Ge pin photodiodes on Si is presented, in which an i-Si layer is inserted between Ge and top Si layers to reduce the electric field in the Ge layer. Without post- growth annealing, the reverse current density is reduced to -10 mA/cm^2 at -1 V, i.e., over one order of magnitude lower than that of the reference photodiode without i-Si layer. However, the responsivity of the photodiodes is not severely compromised. This lowered-reverse-current is explained by band-pinning at the i-Si/i-Ge interface. Barrier lowering mechanism induced by E-field is also discussed. The presented ＂non-thermal＂ approach to reduce reverse current should accelerate electronics-photonics convergence by using Oe on the Si complementary metal oxide semiconductor （CMOS） platform.     

氦氖激光纵模脉冲检测及其数据处理

在分析常用低噪声快速光电探测器的基础上,选择PIN光电二极管来探测氦氖激光纵模脉冲。通过合理设计降低前放电路的噪声,根据被测脉冲频率设计探测电路的带宽,达到提高信噪比的目的。同时在后端的数据处理中,根据激光脉冲的波形函数,利用曲线拟合的方法来进一步去除测量中的各种噪声,从而准确地了解脉冲的形状、相位等信息,大大地提高了在现有硬件设备条件下测量的准确性,减小了测量误差。     

二极管侧泵浦板条固体激光器的热效应研究

 用有限差分法对二极管侧泵浦板条激光介质的温度分布作了数值计算。在此基础上, 对不同条件下二极管侧泵浦激光器的最佳冷却方案进行了研究。用峰值功率为100W, 工作频率为100Hz的二极管泵浦Nd:YAG板条作了实验研究, 所得结果与计算符合较好。