Crystal-Orientation Dependent Evolution of Edge Dislocations from a Void in Single Crystal Cu

The micro-void growth by dislocation emission under tensile loading is explored with focus on the influence of crystal orientations. Based on the elastic theory, a dislocation emission criterion is formulated. It is predicted that the preferential location of dislocation nucleation and its threshold stress are dependent on the crystal orientation. Large-scale molecular dynamics （MD） simulations are also performed for single crystal copper to illustrate the dislocation evolution pattern associated with a nano-void growth. The results are in line with those given by the theoretical prediction. As revealed by MD simulations, the characteristics of void growth at micro-scale depend greatly on the crystal-orientation.     

双轴晶体Nd^3＋：KGd（WO4）2的非偏振吸收光谱研究

报道了用三个方向相互垂直的非偏振吸收光谱测量计算Ｊｕｄｄ－Ｏｆｅｌｔ参数从而算出双轴晶体Ｎｄ３＋ＫＧｄ（ＷＯ４）２的荧光寿命、荧光分支比和发射截面的方法。得到的荧光寿命为１１９μｓ，平均发射截面为２．３×１０－１９ｃｍ２。     

脆性光学材料超精密加工技术

如何在光学晶体、光学玻璃等脆性材料上高效地制取纳米级光学表现是现代超精密加工技术领域的重点研究课题。近年来，此项技术取得了突破性进展，出现了浮法抛光、离子束加工、韧性加工等新一代脆性光学材料超精密加工技术。从加工机理、加工精度、表面质量、生产率等方面对其进行分析比较，并讨论了令人瞩目的韧性加工技术。     

纳米尺寸的ZnO晶体高压相变的拉曼散射研究(英文)

Weperformedthehigh-pressureRaman measurementofthethreenanosizedZnOcrystals. Wefoundthesmallerthesize,thehigherthe pressuretoinducethephasetransitionfrom w櫣rzitetorock-saltstructure. High-pressureRamanmeasurementsof nona-shapedZnOcrystalswerepreformed.The…     

纳米技术新秀:单原子晶体管

 美国康奈尔大学的一个科学家小组研制成由一个钴原子构成的晶体管,钴原子包裹有一层复杂有机化合物,直径仅为10纳米的黄金导线被放置在硅片上,并用这种有机化合物覆盖住。然后在导线上钻一个直径约为1纳米的小孔,制成电源电极和电流电极,再将带有钴原子的有机化合物放置在小孔上,用二氧化硅作绝缘体。哈佛大学另一组科学家也用类似方法研制成单原子晶体管,他们是在黄金电极上放置钒分子,而用氧化铝作绝缘体。单原子或单分子晶体管研究表明,只有在加上一定电压时电流才会通过这类晶体管。此外,将它们放置在磁场中时,通过电流中的电子数量会增加。     

Modified Photoluminescence by Silicon-Based One-Dimensional Photonic Crystal Microcavities

photoluminescence (PL) lrom one-dimensional photonic band structures is investigated. The doped photonic crystal with microcavitles are fabricated by using alternating hydrogenated amorphous silicon nitride (a-SiNx:H/a-SiNy:H) layers in a plasma enhanced chemical vapour deposition (PECVD) chamber. It is observed that microcavities strongly modify the PL spectra from active hydrogenated amorphous silicon nitride (a-SiNx:H) thin film. By comparison, the wide emission band width 208nm is strongly narrowed to 11 nm, and the resonant enhancement of the peak PL intensity is about two orders of magnitude with respect to the emission of the λ/2-thick layer of a-SiNx:H. A linewidth of Δλ=11 nm and a quality factor of Q=69 are achieved in our one-dimensional a-SiNz photonic crystal microcavities. Measurements of transmittance spectra of the as-grown samples show that the transmittance resonant peak of a cavity mode at 710nm is introduced into the band gap of one-dimensional photonic crystal distributed Bragg reflector (DBR), which further verifies the microcavity effects.     

二维NaCl晶体马德隆常数计算

通过计算机运算，给出二维ＮａＣｌ晶体马德隆常数的计算结果。