Isospin Effect of Charged Particle Multiplicity in Intermediate Energy Heavy Ion Collisions

The dependences of He and intermediate mass fragments (IMF) production rates in the reactions 55 MeV/u ^40Ar ^58,64 Ni on the isospin, impact parameter and primary excitation energy of the reaction nuclear system were studied by using the 4π charged particle multi-detector array system (MUDAL). For the mentioned two reaction systems, the measured He particle contribution in the total charged particle multiplicity increases with increasing the total charged particle multiplicity but for the contribution of IMFs in the total charged particle multiplicity increases with increasing the total charged particle multiplicity at lower total charged particle multiplicities, and latter on it drops down with further increasing of the total charged particle multiplicities (see Fig.l). The experimental results of these two reaction systems with the same nuclear charge indicate that the contribution of He and IMFs in the total charged particle multiplicities are obviously isospin dependent.     

CdSe和ZnO量子点的拉曼光谱研究

本文介绍了用拉曼光谱研究CdSe和ZnO两种Ⅱ Ⅳ族量子点材料的结果,对拉曼峰进行了指认。观察到的光学声子峰位的移动被认为是由量子限制效应引起。     

Origin of the 420 nm Absorption Band and Effect of Doping Fluorine in PbWO4 Crystals

The electronic structures for three types of PbW04 (PWO) crystals, the perfect PWO, the PWO containing lead vacancy (PWO-Vpb) and fluorine doped PWO crystal (F^-：PWO), are systematically studied within the framework of density functional theory. The computational results show that the Pb 6s state situates below the valence band so that Pb^2 ions are unable to trap holes forming Pb^3 or Pb^4 to compensate for VPb^2-. The hole-trappers in PWO-Vpb are O^2- ions. Two of the longer-bond O^2- ions share a hole forming O2^3-, and four of the longer-bond oxygen ions trap two holes forming an associated color centre [O2^3--Vpb-O2^3-], which may be the origin of the 42Onto absorption band. It is also concluded that the doping of F^- would reduce the band gap and F^- ions substituting for O^2- can effectively restrict the formation of [O2^3--Vpb-O2^3-] and weaken the 42Onm absorption band and hence enhance the scintillation property of PWO.     

Effects of External Electric Field on Ferroelectric Superlattice with Two Alternating Layers

The effects of the external electric field on the ferroelectric superlattice with two alternating layers have been studied using the transverse Ising model based on the effective-field theory with the differential technique. The hysteresis loops and susceptibility of the system have been given. The stronger the external electric field, the smaller the susceptibility, reflecting that the polarization is weaker.     

达草灭对莱茵衣藻(Chlamydomonas reinhardtii) 品系遗传后效应的研究

通过将莱菌衣藻（Chlamydomonas reinhardtii）6种达草灭抗性突变株分别与野生型株、丧失合成叶绿素b能力的cbnI-43等基因突变株和精氨酸依赖型突变株杂交对其后代进行四分析与随机分析，发现在Nfr-4-Nfr-7突变株中达草灭抗性状只有单一核基因遗传的性质，而在Nfr-1、Nfr-3～Nfr-7抗性株的抗性性状都是由同一个nfr-1基因（norflurazon resisanse）的突变所决定的，而Nfr-4抗性株的抗性性状是由另一滚突变等位基因nfr-2所决定的。在Nfr-1和Nfr-3抗性株中除了nfr-1基因的突变还有nfr-3基因突变的参与。     

穆斯堡尔谱法及其应用

文章简介了穆斯堡尔效应、穆斯堡尔谱的产生以及穆斯堡尔效应的应用 ,说明它不仅在理论上具有深刻的意义 ,又有着广泛的应用价值 .     

介质靶表面的充电效应对等离子体浸没离子注入过程中鞘层特性的影响

针对等离子体浸没离子注入技术在绝缘体表面制备硅薄膜工艺，采用一维脉冲鞘层模型描述介质靶表面的充电效应对鞘层厚度、注入剂量及靶表面电位等物理量的影响.数值模拟结果表明：随着等离子体密度的增高，表面的充电效应将导致鞘层厚度变薄、表面电位下降以及注入剂量增加，而介质的厚度对鞘层特性的影响则相对较小. 关键词： 等离子体浸没离子注入 脉冲鞘层 绝缘介质 充电效应     

走近纳米科技

 纳米科技于20世纪70年代兴起,进入21世纪越来越被大家耳熟。纳米科技在促进科技进步,提高社会文明程度,改善人类生存质量,更新对物质世界的认知及观念上扮演了举足轻重的角色。纳米是长度单位。一纳米为一米的十亿分之一,如果你的拇指指甲盖宽14毫米,这个比例就相当于拇指指甲盖宽度与地球直径间的比例。纳米科技所接触、研究、开发的是100纳米～0.1纳米范围内物质的性质和应用。一个分子或一个原子大小的数量级大致在10纳米。因此,纳米科技也可以说是在分子水平上观察、分析、研究物质的物理、化学性质并加以开发利用。     

切伦柯夫相互作用中分段式慢波结构与均匀慢波结构的比较研究

 分析了切伦柯夫束波相互作用中使用单段慢波结构的缺点。指出在分段式慢波结构中，漂移段及其两端的慢波结构组成一Bragg谐振腔，当漂移段长度合适时，根据渡越时间效应理论，这种结构能减小调制束中电子的速度分散，提高束波转化效率。通过粒子模拟方法，比较了均匀慢波结构与分段式慢波结构中束波相互作用的物理图像，验证了理论分析结果，并说明了后者有束密度群聚充分，束电子速度分散小，产生微波功率高、频谱质量好，最佳工作电流大，输入电功率高等优点。