指数分布下步加试验中的区间估计

在交叉步进应力加速寿命试验中，假定在各组应力下产品的寿命分布为指数分布，对于定数截尾样本，求加速方程中系数的线性无偏估计（ＢＬＵＥ）。在此基础上本文通过构造某些枢轴量，并用Ｍｏｔｅ－Ｃａｒｌｏ方法给出了加速系数及正常应力下，产品可靠性特征量的置信区间。最后给出了一个数值例子。     

混合位级正交试验设计的极差分析方法

本文指出，在混合位级的正交试验设计中，以往的极差分析方法存在着不足。本文给出了极差的修正方法，并用大量实例做了数值验证，说明这个修正确实很有效     

用Josephson结电子模拟器测量磁通量子2e/h

介绍用Josephson结电子模拟器在政党温度下，模拟测量磁通量子2e/h，用模拟器来研究Josephosn结的特性。该实验可作为普通物理实验中课题设计实验的一个内容。     

高阶半线性抛物型方程组的生命跨度

其中m,P,q>1．利用试验函数方法,首先推导一些积分不等式,然后对方程组爆破解的生命跨度 [0,T)给出估计．     

Effect of Hydrogen Implantation on SIMOX SOI Materials

Hydrogen ions were implanted into separation by implantation of oxygen (SIMOX) silicon-on-insulator (SOI) wafers near the oxygen-implantation-induced damage peak under different conditions of energy and dose. It was found that the implanted hydrogen ions not only accelerate the diffusion of oxygen atoms from the annealing ambience into the wafer but also cause an outward diffusion of oxygen atoms in the buried oxide (BOX) layer. Thus, greatly broadened buried oxygen-rich (BOR) layers were formed in our experiments, which are 18%-79% broader than the BOX layer of standard SIMOX SOI wafers under the same conditions of oxygen implantation. The mechanism was discussed. A potential low cost method to fabricate SIMOX SOI wafers is proposed.