GaAs/AlAs超晶格的近共振喇曼散射研究

本文介绍GaAs/AlAs超晶格的室温近共振喇曼散射测量结果。由于超晶格中Fr?hlich相互作用的共振增强效应,GaAs LO声子偶模的散射得到了很大的增强。和前人的结果一样,在偏振谱我们观察到了偶模。但和前人的结果不同,在退偏振谱中我们观察到的是奇模,而不是偶模。从而证明了在近共振条件下LO声子限制模仍遵从与非共振时一样的选择定则。二级喇曼散射实验结果表明,在偏振谱中二级谱是由两个偶模组合而成,而在退偏振谱中的二级谱与前人的结果不同,由一个奇模与一个偶模组合而成。上述结果与最近提出的黄朱模型的预言是一 关键词：     

薄膜界面粗糙对双晶摇摆曲线的影响

用X射线衍射动力学理论,模拟计算InP衬底上InGaAs/AllnAs超晶格和InGaAs单层膜的X射线双晶摇摆曲线,计算结果表明:薄膜界面粗糙对单层膜的衍射峰和超晶格的零级衍射峰影响较小,但却明显影响单层膜衍射干涉条纹和超晶格的±1级卫星峰,随着平均界面粗糙度的增大,单层膜衍射干涉条纹强度减弱并趋于消失;超晶格的±1级卫星峰变弱并逐渐展宽,理论计算的模拟双晶摇摆曲线与超晶格实验曲线比较表明:高质量匹配In_0.53Ga_0.47As(85?)/Al_{0.4 关键词：}     

富于开拓 锐意创新——记学部委员闵乃本教授

 1991年秋,一位富于开拓、锐意创新的学者,应聘担任了“八五”期间国家基础性研究重大关键项目之一的“光电功能材料的结构、性能、分子设计及制备过程”项目的首席科学家.他就是南京大学物理系教授闵乃本先生.他今年57岁,是我国自己培养的优秀中年科学家.1959年,他毕业于南京大学物理系,后留校任教,师从我国著名物理学家冯端教授.长期以来,闵乃本教授致力于晶体物理学的研究,尤其在晶体缺陷、晶体生长以及晶体物理性能等领域作出了许多开创性的工作.在他30多年的科研生涯中,取得了一系列令人瞩目的卓越成就.     

Analytical model of an acoustic diode comprising a superlattice and a nonlinear medium

We give an analytical analysis to the acoustic propagation in an acoustic diode (AD) model formed by coupling a superlattice (SL) with a nonlinear medium. Analytical solutions of the acoustic transmission are obtained by studying the propagations in the SL and the nonlinear medium separately with the conventional transfer-matrix method and a perturbation technique. Compared with the previous numerical method, the proposed approach contributes a better physical insight into the intrinsic mechanism of acoustic rectification and helps us to predict the performance of an AD within the effective rectifying bands in a simple way. This is potentially significant for the practical design and fabrication of AD devices.     

The pressure dependences of elastic and lattice dynamic properties of AlAs from ab initio calculations

Ab initio calculations,based on norm-conserving nonlocal pseudopotentials and density functional theory(DFT),are performed to investigate the structural,elastic,dielectric,and vibrational properties of aluminum arsenide(AlAs) with a zinc-blende(B3) structure and a nickel arsenide(B81) structure under hydrostatic pressure.Firstly,the path for the phase transition from B3 to B81 is confirmed by analyzing the energies of different structures,which is in good agreement with previous theoretical results.Secondly,we find that the elastic constants,bulk modulus,static dielectric constants,and the optical phonon frequencies vary in a nearly linear manner under hydrostatic pressure.What is more,the softening mode of the transversal acoustic mode at the X point supports the phase transition in AlAs.     

Transport dynamics of an interacting binary Bose Einstein condensate in an incommensurate optical lattice

We investigate the transport dynamics of an interacting binary Bose-Einstein condensate in an incommensurate optical lattice and predict a novel splitting of a matter wavepacket induced by disorder potential and inter-species interaction. The effect of atomic interaction on the dynamics of the mobile and localized atoms are also studied in detail. We also discuss the behavior of the balanced and inbalanced mixtures in the incommensurate optical lattice.     

The mobility of nonlocal solitons in fading optical lattices

We study the soliton mobility in nonlocal nonlinear media with an imprinted fading optical lattice. The results show that the transverse mobility of solitons varies with the lattice decay rate and the nonlocality degree, which provides an opportunity for all-optical control of light.     

Effect of vacancy charge state on positron annihilation in silicon

The charge-state-dependent lattice relaxation of mono-vacancy in silicon is studied using the first-principles pseu- dopotential plane-wave method. We observe that the structural relaxation for the first-neighbor atoms of the mono-vacancy is strongly dependent on its charge state. The difference in total electron density between with and without charge states in mono-vacancy and its relevant change due to the localized positron are also examined by means of first-principles simu- lation, demonstrating the strong interplay between positron and electron. Our calculations reveal that the positron lifetime decreases with absolute charge value increasing.     

Performance enhancement of an InGaN light-emitting diode with an AIGaN/InGaN superlattice electron-blocking layer

The efficiency enhancement of an InGaN light-emitting diode （LED） with an A1GaN/InGaN superlattice （SL） electron-blocking layer （EBL） is studied numerically, which involves the light-current performance curve, internal quan- tum efficiency electrostatic field band wavefunction, energy band diagram carrier concentration, electron current density, and radiative recombination rate. The simulation results indicate that the LED with an A1GaN/InGaN SL EBL has better optical performance than the LED with a conventional rectangular A1GaN EBL or a normal A1GaN/GaN SL EBL because of the appropriately modified energy band diagram, which is favorable ibr the injection of holes and confinement of elec- trons. Additionally, the efficiency droop of the LED with an AIGaN/InGaN SL EBL is markedly improved by reducing the polarization field in the active region.     

微重力环境下的复杂等离子体实验

人们日常生活中常见的物质形态有三种:包括固态,例如冰块;液态,例如水;气态,例如空气和水蒸气。等离子体是除此之外的第四种物质形态。等离子体其实和人们的生活息息相关,最常见的莫过于用于照明的荧光管中的辉光了。等离子体作为除固体、液体和气体之外的第四种基本的物质相态,更多地存在于宇宙空间中。