Digitalized Mirror Array and Its Application in Large Telescope： Principle and Case Studies

In this article, we report the principle and conceptual design of a fundamentally different technology in fabricating high precision aberration free optical devices. The tip-tilt of facet in a mirror array is produced by digitally controlled line-tilts of rows and columns. It has not only provided a cost-effective designing methodology in optical physics but also led to a much finer precision of 1 mili arc sec or less. As examples of the application of the proposed digitalised optics, two case studies have been given： a 10 m Schmidt telescope （off-axis） and an 8 m Cassegrain telescope （on-axis）.     

A new gaseous detector — micro mesh gaseous structure

The structure and working principle of Micromegas （MICRO Mesh Gaseous Structure） is discussed. Some radiation sources of α and X rays are used to test this detector. The optimized electric-field intensity of the conversion gap is obtained. The transmission of electrons and the uniformity of the amplification gap are also presented. The energy resolution of the 5.9 keV peak is better than 27%.     

Schottky Barrier Formation at a Carbon Nanotube-Scandium Junction

Recent experiment shows that scandium （Sc） can make a good performance contact with carbon nanotubes （CNTs） to fabricate n-type field effect transistor （n-FET）. We study the Schottky barrier （SB） of scandium （Sc） and palladium （Pd） with a （8,0） single-wall CNT （SWCNT） using first-principles calculation. It is found that the p-type SB height （SBH） of the Pd-CNT contact is about 0.34 eV, which is in good agreement with the experimental data. For the Sc-CNT contact, an n-type contact is formed and the SBH is about O.08eV in agreement with the experimental observations. Our calculation demonstrates that by contacting CNT with Pd and Sc, p-FET and n-FET can be fabricated, respectively. The dipole effect at the interface is used to explain our result.     

A Scheme for Atomic Entangled States and Quantum Gate Operations in Cavity QED

We propose a scheme for controllably entangling the ground states of five-state W-type atoms confined in a cavity and realizing swap gate and phase gate operations. In this scheme the cavity is only virtually excited and the atomic excited states are almost not occupied, so the produced entangled states and quantum logic operations are very robust against the cavity decay and atomic spontaneous emission.     

Li- Site and Metal-Site Ion Doping in Phosphate-Olivine LiCoPO4 by First-Principles Calculation

We present a first-principles investigation of the crystal and electronic structure as well as the average insertion voltage of the Li-site （by Na and Cr） and metal-site （by isovalent Ni, Zn, Ca, Mg and Mn and aliovalent Cu, Al, In, Mo and Zr） doped LiCoPO4. The results show that both the Li-site doping and metal-site doping may reduce the volume change of the material during Li extraction/reinsertion process. The metal doped at Li-site will block the path of Li ion diffusion. The doping by aliovalent transition metals will introduce defect levels in the energy band. It could influence the conductivity insertion voltage.     

The MAEAM Model and Anharmonic Theory for the Bulk Modulus of A1 Metal

The modified analytic embedded atom method （MAEAM） model and the anharmonic theory are used to study the bulk modulus of fcc A1 metal. The result shows that the bulk modulus can be described by a quadratic function of temperature. The result is in good agreement with the experimental data and theoretical results calculated by the first principle calculation etc. This outcome indicates that the temperature dependence of the bulk modulus for f cc A1 metal can be academically studied with the MAEAM model combining with the anharmonic theory.     

Bulk Modulus and Electronic Band Structure of ZnGa2Xa （X=S,Se）： a First-Principles Study

First-principles local density functional calculations are presented for the compounds ZnGa2X4 （X = S, Se）. We investigate the bulk moduli and electronic band structures in a defect chalcopyrite structure. The lattice constants and internal parameters are optimized. The electronic structures are analysed with the help of total and partial density of states. The relation between the cohesive energy and the unit cell volume is obtained by fully relaxed structures. We derive the bulk modulus of ZnGa2Xa by fitting the Birch-Murnaghan＇s equation of state. The extended Cohen＇s empirical formula agrees well with our ab initio results.     

Phase Transition and Thermodynamics of Ruthenium Diboride via First-Principles Calculations

The pressure induced phase transitions of RuB2 from the OsB2-type structure to the ReB2-type structure are investigated by first-principles calculations based on the plane-wave basis set with the generalized gradient ap- proximation for exchange and correlation. It is found that the phase transition occurs at 18.6 GPa. We predict the phase transition from the OsB2-type RuB2 to the ReB2-type RuB2 at high temperatures for the first time. The dependences of the heat capacity, thermal expansion coefficient, and the Grüneisen parameter on pressure and temperature for OsB2-type RuB2 and ReB2-type RuB2 are also investigated.     

时滞Duffing型微分方程周期解的存在唯一性

利用三角级数理论及压缩映射原理研究了时滞Duffing型方程ax″(t) bx(t) g(x(t-τ))=p(t),给出了此类Duffing型方程存在唯一周期解的几个充分条件.     

操作参数对PEM燃料电池中水迁移的影响

质子膜内水分和阴极多孔电极中液态水含量是PEM燃料电池正常运行的控制因素。本文给出了一个用于研究PEM燃料电池内水迁移的稳态、等温、两相流模型。模型耦合了连续方程、动量守恒方程和物质守恒方程,以及水在质子膜中传递方程。运用试验结果验证了模型的有效性。分析模拟结果表明,增大系统操作压力、升高电池操作温度和降低加湿温度将会使质子膜中水的净迁移通量增大;增大操作压力、降低操作温度和升高加湿温度会增加阴极CTL与GDL界面上液态水含量。