关于态射的Drazin逆

给出了态射的Drazin逆存在的条件及显式表达式，改进并推广了[1]、[2]与[3]中的一些主要定理。     

新型二次顶出机构

这里针对薄壁桶型且中间有4个空心立柱要求的零件。介绍了一压铸模二次顶出机构。较传统工艺生产有较高的使用价值。     

完全Rees矩阵半群的分解及性质

用等价关系Q^~出了完全Rees矩阵半群的一种分解．而且得到了它的每个Q^~一类的表示．     

吸附溶出伏安法测定毗喳酮的研究

本文报道了用吸附溶出伏安法测定毗喳酮.以悬汞电极为工作电极，在Na}B,O,-NaOH介质(pH=10)中，毗喳酮产生一尖锐的吸附还原峰,E，二一1. 29V (vs. SCE )，峰电流与毗喳酮浓度在2. 0 X 10-'-8. 0 X 10-smol " L-’范围内呈良好的线性关系.检测限为2. 0 X 10-0mol " L-'(富集90s).本文对毗喳酮在悬汞电极上的电化学行为进行了探讨，对测定毗喳酮的最佳条件进行了详细的选择，利用本法测定了片剂中毗喳酮含量，结果满意.     

网络中一类最短支撑树的计算方法

本文在无向赋权图求最短路的Dijkstra算法的基础上,提出了在有向网络图中寻找具有一个枢纽点且与其它各点均有定向联系的最短支撑树的算法,同时还给出了应用该算法的一个计算实例。     

Crystal-Orientation Dependent Evolution of Edge Dislocations from a Void in Single Crystal Cu

The micro-void growth by dislocation emission under tensile loading is explored with focus on the influence of crystal orientations. Based on the elastic theory, a dislocation emission criterion is formulated. It is predicted that the preferential location of dislocation nucleation and its threshold stress are dependent on the crystal orientation. Large-scale molecular dynamics （MD） simulations are also performed for single crystal copper to illustrate the dislocation evolution pattern associated with a nano-void growth. The results are in line with those given by the theoretical prediction. As revealed by MD simulations, the characteristics of void growth at micro-scale depend greatly on the crystal-orientation.     

Field Quantization and Spontaneous Emission in Left-handed Material

Recently, research on left-handed materials （LHMs） has attracted considerable attentions. The LHMs are a kind of man-made metameterials which have negative permittivity and negative permeability. These metameterials have many novel properties such as inverse light pressure, and reverse Doppler effect, which lead to many potential applications of LHMs such as superlenses which, in principle, can achieve arbitrary subwavelength resolution. However, though the properties mentioned above are seen to be classical, the quantum phenomena in LHMs have also attracted attentions such as the modified spontaneous emission of atoms in LHME.     

北京谱仪端盖簇射计数器的建造与检测

描述了北京谱仪端盖簇射计数器的结构及制造工艺.并给出丝张力,暗电流、计数管工作特性等检测结果.