The indenter tip radius effect in micro- and nanoindentation hardness experiments.

Nix and Gao established an important relation between the microindentation hardness and indentation depth. Such a relation has been verified by many microindentation experiments (indentation depths in the micrometer range), but it does not always hold in nanoindentation experiments (indentation depths approaching the nanometer range). Indenter tip radius effect has been proposed by Qu et al. and others as possibly the main factor that causes the deviation from Nix and Gao's relationship. We have developed an indentation model for micro- and nanoindentation, which accounts for two indenter shapes, a sharp, conical indenter and a conical indenter with a spherical tip. The analysis is based on the conventional theory of mechanism-based strain gradient plasticity established from the Taylor dislocation model to account for the effect of geometrically necessary dislocations. The comparison between numerical result and Feng and Nix's experimental data shows that the indenter tip radius effect indeed causes the deviation from Nix-Gao relation, but it seems not be the main factor. The project supported by the National Natural Science Foundation of China (10121202) and the Ministry of Education of China (20020003023)     

Bauschinger and size effects in thin-film plasticity due to defect-energy of geometrical necessary dislocations

The Bauschinger and size effects in the thinfilm plasticity theory arising from the defect-energy of geometrically necessary dislocations (GNDs) are analytically investigated in this paper. Firstly, this defect-energy is deduced based on the elastic interactions of coupling dislocations (or pile-ups) moving on the closed neighboring slip plane. This energy is a quadratic function of the GNDs density, and includes an elastic interaction coefficient and an energetic length scale L. By incorporating it into the work- conjugate strain gradient plasticity theory of Gurtin, an energetic stress associated with this defect energy is obtained, which just plays the role of back stress in the kinematic hardening model. Then this back-stress hardening model is used to investigate the Bauschinger and size effects in the tension problem of single crystal Al films with passivation layers. The tension stress in the film shows a reverse dependence on the film thickness h. By comparing it with discrete-dislocation simulation results, the length scale L is determined, which is just several slip plane spacing, and accords well with our physical interpretation for the defect- energy. The Bauschinger effect after unloading is analyzed by combining this back-stress hardening model with a friction model. The effects of film thickness and pre-strain on the reversed plastic strain after unloading are quantified and qualitatively compared with experiment results.     

基于铁电材料P(VDF-TrFE)调控的多级光突触晶体管

利用有机材料PDVT-10中固有的持续光电导效应,结合铁电材料P(VDF-TrFE)提供的极化电场,通过调整铁电材料的极化强度来实现对光突触器件驰豫特性的调控.模拟了突触的短期可塑性、双脉冲易化性等基本功能,并进一步实现了多级、可调光突触.此外,持续光电导效应的驰豫现象与生物突触中Ca2+的流动特性相类似,可以更好地模...     

一道课本例题的研究性学习

课本例题是通过精心编拟的，它具有代表性、典型性和可塑性，故在学习中，我们要善于研究它们，为此，本文以一例说明，供同学们参考．     

脑的可塑性研究及其对教育的启示

大脑是一个复杂而动态的系统,受学习、训练以及各种经验等因素的影响,其结构和功能都会出现动态的修复或重组,也就是体现出所谓的可塑性。当前认知神经科学研究表明,在个体发展的生命全程中枢神经系统都具有一定的可塑性,如儿童大脑、成人大脑以及非正常人大脑均具有可塑性。由于在个体发展的不同阶段可塑性是动态变化的,而且不同脑区在不同时间其功能活性以及可塑性本身也不一样,所以,在制定相关的教育方案或干预措施时,必须综合考虑影响大脑可塑性的这些因素,加强教育的针对性和实效性,实现科学的保护脑、使用脑、开发脑;充分利用大脑的可塑性,重视早期教育;提供丰富而适宜的教育环境,全面开发大脑的潜能,促进大脑的整合式发展;全面了解影响大脑可塑性的因素,寻求大脑可塑性与教育的最佳结合点。     

光照和氮素对外来植物凤眼莲生长和生理特性的影响

通过研究不同光照和氮素营养处理的外来植物凤眼莲的生长、生物量分配、硝酸还原酶活性、游离氨基酸以及可溶性蛋白质含量变化，探讨其对环境适应性的生理学机制。凤眼莲表现出极强的可塑性，随光照和氮素营养的增加，凤眼莲生长速率明显加快，氮素代谢关键酶硝酸还原酶活性上升。根部吸收的硝酸根离子大部分运输到叶片中还原，氮素同化效率高。氨基酸含量和可溶性蛋白质含量呈现明显的变化，叶片可溶性蛋白质含量与根冠生物量分配显著相关。本研究表明风眼莲对光照和氮素表现出很强的适应性，其快速生长和高可塑性依赖于对环境变化的牛理响廊。     

迪拜的逆袭

世人目睹了一贫如洗的小镇逆袭成为了世界上最具可塑性的增长地区,我们有理由相信,迪拜的“想象力”仍然有助于其在全球化的过程中长袖善舞。     

钙钛矿相界面插层对SrFeOx基忆阻器的性能提升

SrFeO_x(SFO)是一种能在SrFeO_2.5钙铁石(BM)相和SrFeO₃钙钛矿(PV)相之间发生可逆拓扑相变的材料.这种相变能显著改变电导却维持晶格框架不变,使SFO成为一种可靠的阻变材料.目前大部分SFO基忆阻器使用单层BM-SFO作为阻变功能层,这种器件一般表现出突变型阻变行为,因而其应用被局限于两态存储.对于神经形态计算等应用,单层BM-SFO忆阻器存在阻态数少、阻值波动大等问题.为解决这些问题,本研究设计出BM-SFO/PV-SFO双层忆阻器,其中PV-SFO层为富氧界面插层,可在导电细丝形成过程中提供大量氧离子并在断裂过程中回收氧离子,使导电细丝的几何尺寸(如直径)在更大范围内可调,从而获得更多、更连续且稳定的阻态,可用于模拟长时程增强和抑制等突触行为.基于该器件仿真构建了全连接神经网络(ANN),在手写体数字光学识别(ORHD)数据集进行在线训练后获得了86.3%的识别准确率,相比于单层忆阻器基ANN的准确率提升69.3%.本研究为SFO基忆阻器性能调控提供了一种新方法,并展示了它们作为人工突触器件在神...     

抑制性消减杂交方法的建立

为建立研究基因表达差异的抑制性消减杂交（SSH）方法，以未加诱导剂处理的结肠癌LoVo细胞提取的mRNA为模板合成的cDNA作为驱赶子（driver)，联合使用10.0μmol/LATRA和0.1μmol/L1,25-(OH)2D3诱导2d的LoVo细胞提取的mRNA为模板合成的cDNA作为测试子（tester)进行SSH实验，结果为：消减产物与未消减样品（对照）在琼脂糖凝胶电泳图谱上明显不同，前者可见一些扩增条带，其大小范围在100-1000bp之间，本实验说明SSH方法对于识别差异表达的基因具有高效性。