新型钝感炸药1-氧-2，6-二氨基-3，5-二硝基吡嗪的合成及表征

美国LLNL1995年合成出的代号为LLM-105的高能量密度材料，其化学名称为1-氧-2，6-二氨基-3，5-二硝基吡嗪（2，6-diamino--3，5-dinitropyrazine-1-oxide），分子结构式C4H4N605，分子量216．04，密度为1．913g／cm^3，氧平衡为-37．03％，生成热为-3．1kcal／mole，外观为亮黄色的针状晶体，比TATB的能量约高25％，且有着良好的热安定性，特性落高Dh50=117cm（RDX和HMX的特性落高30-32cm），对静电火花的刺激也很钝感。由于综合性能优异，LLM-105已经引起了国际炸药界的极大兴趣。     

激光等离子体探针及应用研究

本文介绍用阴影、纹影相干涉方法确定等离子体折射系数变化的原理。分析了等离子体中的非线性效应和对光探测系统的基本要求。并简要叙述了实验上采用的后向喇曼探测束,给出了等离子体干涉、纹影和阴影的测量结果。     

Singlet-Triplet Transition in Quantum Dots Confined by Triangular and Bowl-Like Potentials： the Effect of Electric Fields

We theoretically investigate the energy spectra of two-electron two-dimensional （2e 2D） quantum dots （QDs） confined by triangular potentials and bowl-like potentials in a magnetic field by exact diagonalization in the framework of effective mass theory. An in-plane electric field is found to contribute to the singlet-triplet transition of the ground state of the 2e 2D QDs confined by triangular or bowl-like potentials in a perpendicular magnetic field. The stronger the in-plane electric field, the smaller the magnetic field for the total spin of the ground states in the dot systems to change from S = 0 to S = 1. However, the influence of an in-plane electric field on the singlettriplet transition of the ground state of two electrons in a triangular QD modulated by a perpendicular magnetic field is quite small because the triangular potential just deviates from the harmonic potential well slightly. We find that the strength of the perpendicular magnetic field needed for the spin singlet-triplet transition of the ground state of the QD confined by a bowl-like potential is reduced drastically by applying an in-plane electric field.     

薄铝埋点等离子体K线光谱半定量诊断

高温等离子体系统中存在等离子体流体力学运动演化过程、离子的离化分布演化动力学过程、高剥离态离子谱发射过程及发射芬光辐射输运过程等，而且高温等离子体系统通常是非平衡系统，所以定量研究高温等离子体系统的发射X光谱和高温等离子体对X光的吸收是一个非常复杂的问题。为了模拟和解释实验测得的激光等离子体发射光谱，提出了一种薄埋点靶：直径为φ200μm厚度为0．1μm的铝点埋在20μm厚的CH膜底衬中，表面再覆盖0．1μm厚CH膜。     

脉冲放电等离子体烟气脱硫脱硝工业试验

脉冲放电等离子体烟气治理技术具有流程简单，一次投资成本低，无二次污染，可同时脱硫脱硝，形成的副产物可回收利用等特点。     

高纯度烟草过氧化物酶(TOPⅠ)光谱特性研究

采用交换吸附脱色及柱层析新技术,成功地从烟叶中分离和纯化了一种烟草过氧化物酶同工酶(TOPⅠ),并对其进行了一系列光谱特性研究.基质辅助激光解吸电离飞行时间质谱(MALDI-TOF-MS)测得TOPⅠ分子量为21 888.5,等电点pI为3.5;氨基酸组成分析表明TOPⅠ为一含血红素的酸性蛋白酶.光谱学分析揭示,在402 nm处有一典型的Soret带,在498和636 nm处有特征吸收峰(α,β带),酸度和变性剂对TOPI在紫外可见区的特征吸收峰均产生一定的影响,TOP Ⅰ的荧光光谱测定结果说明TOPⅠ分子中含有Trp残基和Tyr残基以及其自身的独特的光谱学特性.     

氢原子光谱实验研究

氢原子的结构简单，其光谱具有明显的规律，各种原子光谱线规律性的研究首先是在氢原子上得到突破。通过测量氢光谱可见谱线的波长，能较准确测定氢的里德伯常数，可使学生对近代物理测量有初步了解。     

A Quasi-Symmetric Coupled Quantum Well and Its Electric-Optical Properties

We propose a novel coupled quantum well structure, i.e. a quasi-symmetric coupled quantum well (QSCQW). Based on the demands of optical switching devices for quantum well materials, the QSCQW configuration is further optimized. Consequently, in the case of low applied electric field 25kV/cm and low absorption loss 100cm^-1, a large field-induced refractive index change (for TE mode, n = 0.0106; for TM mode, n = 0.0115) is obtained in the QSCQW structure at the operation wavelength 1550hm. The value is in one or two order of magnitude larger than that in a rectangular quantum well and about 50% larger than that of five-step asymmetric coupled quantum well structure under the same working conditions. The refractive index change obtained with the optimized QSCQW under so low absorption loss and applied electric field is very attractive for semiconductor optical switching devices. This manifests that the QSCQW structure has a great potential for applications in ultra-fast and low-voltage optical switches and in travelling wave modulators.     

Deposition of Hydrogen-Free Silicon Nitride Thin Films by Microwave ECR plasma Enhanced Magnetron Sputtering at Room Temperature

Hydrogen-free silicon nitride （SiNx） films were deposited at room temperature by microwave electron cyclotron resonance （MW-ECR） plasma enhanced unbalance magnetron sputtering system. Both Fourier-transform infrared spectroscopy and x-ray photoelectron spectroscopy are used to study the bonding type and the change of bonding structures of the silicon nitride films. The results indicate that the chemical structure and composition of SiNx films deposited by this technique depend strongly on the N2 flow rates, the stoichiometric SiNx film, which has the highest hardness of 22.9 GPa, could be obtained at lower N2 flow rate of 4 sccm.