MICROMECHANICS OF MACROELECTRONICS

The advent of flat-panel displays has opened the era of macroelectronics. Enthusiasm is gathering to develop macroelectronics as a platform for many technologies, ranging from paper-like displays to thin-film solar cells, technologies that aim to address the essential societal needs for easily accessible information, renewable energy, and sustainable environment. The widespread use of these large structures will depend on their ruggedness, portability and low cost, attributes that will come from new material choices and new manufacturing processes. For example, thin-film devices on thin polymer substrates lend themselves to roll-to-roll fabrication, and impart flexibility to the products. These large structures will have diverse architectures, hybrid materials, and small features; their mechanical behavior during manufacturing and use poses significant challenges to the creation of the new technologies. This paper describes ongoing work in the emerging field of research - the mechanics of macroelectronics, with emphasis on the mechanical behavior at the scale of individual features, and over a long time.     

X射线微光刻的常规X线光源实现方法

叙述了利用固体靶X射线光源实验X射线微光刻的方法，给出了X射线腌膜、抗蚀剂及X射线曝光的工艺过程和实验结果。     

Gas flow characteristics in straight silicon microchannels

Experiments have been conducted to investigate nitrogen gas flow characteristics through four trapezoidal silicon microchannels with different hydraulic diameters. The volume flow rate and pressure ratio are measured in the experiments. It is found that the friction coefficient is no longer a constant, which is different from the conventional theory. The characteristics are first explained by the theoretical analysis. A simplified rectangular model (rectangular straight channel model) is then proposed. The experimental results are compared with the theoretical predictions based on the simplified rectangular model and the two-dimensional flow between the parallel-plate model which was usually used. The difference between the experimental data and the theoretical predictions is found in the high-pressure ratio cases. The influence of the gas compressibility effect based on the Boltzmann gas kinetic analysis method is studied to interpret the discrepancy. We discuss two important factors affecting the application extent of different prediction models.     

Annealing Characteristics of ultra—thin high—K HfO2 gate dielectrics

Ultra-thin HfO2 gate-dielectric films were fabricated by ion-beam sputtering a sintered HfO2 target and subsequently annealed at different temperatures and atmospheres.We have studied the capacitance-voltage,current-voltage,and breakdon characteristics of the gate dielectrics.The results show that electrical characteristics of HfO2 gate dielectric are related to the annealing temperature.With increase annealing temperature,the largest value of capacitance decreases,the equivalent oxide thickness increases,the leakage current reduces,and the breakdown voltage decreases.     

物理学研究与微电子科学技术的发展

回顾了微电子学的诞生和微电子技术的发展历史，展望了微电子技术未来的发展趋势。在微电子技术延生和发展中具有一些里程碑式的发明，如晶体管、集成电路、集成电路平面工艺、MOS器件、微处理器、光刻技术、铜互连工艺的发明等，其中物理学研究和突破起子关键的基础作用。在社会需求、物理学研究和技术进步的推动下，微电子技术一直并将继续以特征尺寸缩小、集成度提高的模式，按摩尔定律预测的指数增长率发展。微电子技术的发展，不仅为物理学的研究提供了崭新的技术基础，而且为物理学研究展现了更为广阔的空间。但随着器件特征尺寸逐渐缩小并逼近期物理极限，微电子技术的发展将受到来自于材料、工艺和物理基础等方面的挑战，并呈现出多维发展的趋势，这些挑战涉及了微电子学与物理学的共同理论基础，需要二者互相锲合，期待新的突破。     

控制原子的芯片--在芯片上产生的玻色-爱因斯坦凝聚

不久前 ,来自德国慕尼黑的科学家们 (如Ｈ ｎｓｅｌ等 )利用微电子芯片实现了玻色 -爱因斯坦凝聚 .这一成果标志着芯片技术应用的一次飞跃 ,为量子退相干理论研究、单粒子探测、原子刻蚀、原子全息乃至量子计算机的发展开辟了一条光明之路 .Ｈ ｎｓｅｌ等在 2 0× 2 0ｍｍ2 的芯片上制备出了复杂的金导线电路 ,并且按照冷却程序通入可控的交、直电流 .微电路所产生的场与外部线圈 (其结构比以往要简单得多 )所提供的均匀场叠加 ,构成了捕获原子所需的四极磁场 .芯片位于体积为 30× 30× 110ｍｍ3 的玻璃盒内 ,它面朝下被贴在盒的顶部 .磁捕…     

金属氧化物与现代微电子学——过渡金属前体化合物及转化为材料的化学过程

金属氧化物薄膜如HfO₂（被称为高k电介质）是现代微电子器件的关键组件,广泛用于计算机（平板电脑,笔记本电脑和台式机）、智能电话、智能电视、汽车和医疗设备中。具有大介电常数（k）的金属氧化物已经取代了介电常数小的SiO₂（k=3.9）,从而使得微电子元件进一步小型化。过渡金属化合物在化学气相沉积（CVD）和原子层沉积（ALD）中被广泛用作前体,通过与O₂、H₂O或O₃的反应生成金属氧化物薄膜。微电子金属氧化物膜是纳米材料最广泛应用的一个领域。本文概观该领域的最新进展,包括我们对d⁰过渡金属配合物与O₂反应的研究。     

同心圆环形场发射阵列阴极的粒子模拟

模拟了同心圆环形发射阵列阴极的特性，采用时域有限差分法计算了电场，利用Ｆｏｗｌｅｒ－Ｎｏｒｄｈｅｉｍ方程计算锥尖处的发射电流，利用Ｌｏｒｅｎｔｚ方程计算了电子的运动轨迹，得到了微阴极电子运动轨迹，相空间图以及电子束的发散度，亮度等，结果表明该结构能形成良好的聚焦电子束。     

Shapiro effect in mesoscopic LC circuit

In this paper we consider the movement of an electron in the single electron tunnel process through a mesoscopic capacitor. The results show that, due to the Coulomb force, there is a threshold voltage V_t in the mesoscopic LC circuit. When the external voltage is lower than the threshold voltage, the tunnel current value is zero, and the Coulomb blockade phenomenon arises. Furthermore, considering that the mesoscopic dimension is comparable to the coherence length in which charge carriers retain the phase remembrance, a weak coupling can be produced through the proximity effect of the normal metal electrons of both electrodes of a mesoscopic capacitor. By varying the external voltage, we can observe the Shapiro current step on the current－voltage characteristic curve of a mesoscopic LC circuit.