多普勒效应测试仪的改进

为了解决电磁波多普勒效应在实验室演示的困难，采用单片机和一系列大规模集成电路设计了一种演示电磁波多普勒效应的测试仪器，分析了电磁波的多普勒效应原理，给出了该仪器的组成结构，介绍了该仪器铁特点。     

Isospin Effect of Charged Particle Multiplicity in Intermediate Energy Heavy Ion Collisions

The dependences of He and intermediate mass fragments (IMF) production rates in the reactions 55 MeV/u ^40Ar ^58,64 Ni on the isospin, impact parameter and primary excitation energy of the reaction nuclear system were studied by using the 4π charged particle multi-detector array system (MUDAL). For the mentioned two reaction systems, the measured He particle contribution in the total charged particle multiplicity increases with increasing the total charged particle multiplicity but for the contribution of IMFs in the total charged particle multiplicity increases with increasing the total charged particle multiplicity at lower total charged particle multiplicities, and latter on it drops down with further increasing of the total charged particle multiplicities (see Fig.l). The experimental results of these two reaction systems with the same nuclear charge indicate that the contribution of He and IMFs in the total charged particle multiplicities are obviously isospin dependent.     

用于波分复用系统的多峰干涉滤光片

介绍了用于波分复用系统的多峰干涉滤光片的设计原理,提出了滤光片透射峰位置的确定方法,讨论了影响滤光片半宽度和截止度的因素,给出了滤光片的膜厚容差分析结果,表明透射率监控标准偏差在<0.5%范围内,可以得到波形良好的多峰滤光片,最后给出了实验结果.     

CdSe和ZnO量子点的拉曼光谱研究

本文介绍了用拉曼光谱研究CdSe和ZnO两种Ⅱ Ⅳ族量子点材料的结果,对拉曼峰进行了指认。观察到的光学声子峰位的移动被认为是由量子限制效应引起。     

Origin of the 420 nm Absorption Band and Effect of Doping Fluorine in PbWO4 Crystals

The electronic structures for three types of PbW04 (PWO) crystals, the perfect PWO, the PWO containing lead vacancy (PWO-Vpb) and fluorine doped PWO crystal (F^-：PWO), are systematically studied within the framework of density functional theory. The computational results show that the Pb 6s state situates below the valence band so that Pb^2 ions are unable to trap holes forming Pb^3 or Pb^4 to compensate for VPb^2-. The hole-trappers in PWO-Vpb are O^2- ions. Two of the longer-bond O^2- ions share a hole forming O2^3-, and four of the longer-bond oxygen ions trap two holes forming an associated color centre [O2^3--Vpb-O2^3-], which may be the origin of the 42Onto absorption band. It is also concluded that the doping of F^- would reduce the band gap and F^- ions substituting for O^2- can effectively restrict the formation of [O2^3--Vpb-O2^3-] and weaken the 42Onm absorption band and hence enhance the scintillation property of PWO.     

Raman properties embeddedof GaSb nanoparticlesin SiO2 films

The Raman shifts of nanocrystalline GaSb excited by an Ar^ ion laser at wavelengths 514.5, 496.5, 488.0, 476.5,and 457.9nm are studied by an SPEX-1403 laser Raman spectrometer respectively, and they are explained by phonon confinement, tensile stress, resonant Raman scattering and quantum size effects. The Stokes and anti-Stokes Raman spectra of GaSb nanocrystals strongly support the Raman feature of GaSb nanocrystals. The calculated optical spectra compare well with experimental data on Raman scattering GaSb nanocrystals.     

浅淡多普勒效应

列车进站时，我们听到汽笛声不仅越来越大，而且音调变高；列车离去时，汽笛声不仅越来越小，而且音调变低．反之，若声源未动而观察者运动，或者声源和观察者同时在相对运动，也会发生观测频率与波源频率不一致的现象．由于波源或观察者的运动而出现观测频率与波     

电致发光色纯性增强的硅基有机微腔

报道了硅基有机微腔的电致发光（EL）.该微腔由上半透明金属膜、中心有源多层膜和多孔硅分布Bragg反射镜（PS DBR）组成.半透明金属膜由Ag（２０nm）构成，充当发光器件的负电极和微腔的上反射镜.有源多层膜由Al (1 nm) / LiF(05 nm) /Alq3/Alq3:DCJTB/NPB/CuPc/ITO/SiO2组成，其中的Al/LiF为电子注入层，ITO为正电极，SiO2为使正、负电极电隔离的介质层.该PS DBR是采用设备简单、成本低廉且非常省时的电化学腐蚀法用单晶Si来制备的；该PS 关键词： 电化学腐蚀 电致发光 窄峰发射 硅基有机微腔