电阻的测量方法归类分析

分析历年对电阻测量的高考试题可以现，在考查方式上，已经从教材中实验的考查渐过渡到设计型实验的考查；在考查内容上，经从实物连接、仪器选择的考查逐渐过渡到验原理、电路设计的考查，要求同学们能够灵地从一种实验情景迁移到另一种情景，从而分考查同学们的创新能力．下面就电阻的测量方法进行归纳。     

HI—V族化合物半导体的高能重离子辐照缺陷研究·

用正电子湮没寿命谱技术研究了2.4×1O15/cm2、2.2×1016/cm2注量的85MeV19F离子辐照N型GaP和1.6×1016/cm 2注量的85MeV19F离子辐照P型InP所产生的辐照缺陷.结果表明:两种注量辐照在GaP中均产生较高浓度的单空位.其浓度随着辐照注量的增大而增加;辐照也在InP中产生较高浓度的单空位.     

非线性中立型系统的稳定性判据

本文同时应用函数,推广了的Gronwall—Bellman不等式以及类似于文[1]引理3的方法,讨论了二类非线性中立型系统的稳定性,得到了仅依赖于方程系数的简单代数判据,推广了文[5]的结果。     

Effects of External Electric Field on Ferroelectric Superlattice with Two Alternating Layers

The effects of the external electric field on the ferroelectric superlattice with two alternating layers have been studied using the transverse Ising model based on the effective-field theory with the differential technique. The hysteresis loops and susceptibility of the system have been given. The stronger the external electric field, the smaller the susceptibility, reflecting that the polarization is weaker.     

Recombination Efficiency in Double-Layer Organic Light-Emitting Devices

We analyse the influence of properties of organic/organic interface (OOI) on the characteristics of recombination efficiency of organic double-layer light-emitting diodes. Based on the disordered hopping theory model, spatial and energetic disorder of hopping states are also discussed for the case of space charge limited currents in hole transmitting layers but injection-limited currents in electron transporting layers. The results show that the recombination efficiency increases firstly and then decreases for different OOI parameters, and there is a maximum value changed with different spatial disorder parameters and energetic disorder scale. Different spatial disorder parameters make carrier mobilities change greatly, and the energetic disorder scale causes various localized state densities. Our calculated results are qualitatively in agreement with the experimental data.     

关于Banach空间中凸泛函的广义次梯度不等式

本文在前人^[1,2]的基础之上，以凸泛函的次梯度不等式为工具，将Jensen不等式推广到Banach空间中的凸泛函，导出了Banach空间中的Bochner积分型的广义Jensen不等式，给出其在Banach空间概率论中某些应用，从而推广了文献[3—6]的工作．     

Theoretical Analysis of Characteristics of GaxInl—x NyAsl—y／GaAs Quantum Well Lasers with Different Intermediate Layers

Based on the band anticrossing model, the effects of the strain-compensated layer and the strain-mediated layero n the band structure, gain and differential gain of GalnNAs/GaAs quantum well lasers have been investigated. The results show that the GaNAs barrier has a disadvantage in increasing the density of states in the conduction band. Meanwhile, the multilayer quantum wells need higher transparency carrier density than the GalnNAs/GaAs single quantum well with the same wavelength. However, they help to suppress the degradation of the differential gain. The calculation also shows that from the viewpoint of band structure, the strain-compensated structure and the strain-mediated structure have similar features.     

塑料光纤(POF)的发展及其应用

阐述了阶跃型塑料光纤和渐变型塑料光纤的发展过程及其国内外研究现状,介绍了塑料光纤在局域网、汽车工业、传感器等领域的应用.通过对石英光纤、金属电缆与塑料光纤的性能进行比较,得到了塑料光纤具有芯径大、柔韧性好、价格低廉、制作简单等特点.就塑料光纤在局域网、汽车工业、传感器等领域的应用进行了分析、总结,结果表明降低塑料光纤的传输损耗可以进一步扩大其应用领域.最后分析了我国塑料光纤的研究、生产现状与国际水平的差距,并提出了提高国产塑料光纤技术水平的建议.     

介质靶表面的充电效应对等离子体浸没离子注入过程中鞘层特性的影响

针对等离子体浸没离子注入技术在绝缘体表面制备硅薄膜工艺，采用一维脉冲鞘层模型描述介质靶表面的充电效应对鞘层厚度、注入剂量及靶表面电位等物理量的影响.数值模拟结果表明：随着等离子体密度的增高，表面的充电效应将导致鞘层厚度变薄、表面电位下降以及注入剂量增加，而介质的厚度对鞘层特性的影响则相对较小. 关键词： 等离子体浸没离子注入 脉冲鞘层 绝缘介质 充电效应     

激光限制结晶技术制备nc-Si/SiO2多层膜

在等离子体增强化学气相淀积系统中，采用aSi:H层淀积和原位等离子体氧化相结合的逐层生长技术制备了aSi:H/SiO_2多层膜.在激光诱导限制结晶原理基础上，使用KrF准分子脉冲激光为辐照源，对aSi:H/SiO_2多层膜进行辐照，使纳米级厚度的aSi:H子层晶化.Raman散射谱和电子衍射谱的结果表明，经过激光辐照后纳米Si颗粒在原始的aSi:H子层内形成，晶粒尺寸可以根据aSi:H层的厚度精确控制.还研究了样品的光致发光（PL）特性以及激光辐照能量密度对PL性质的影响. 关键词： 脉冲激光 多层膜 限制结晶