Geometry optimization in planetary rotation stage for thickness uniformity of films on spherical substrates

We report the simulation results on the thickness uniformity of optical coatings deposited on spherical substrates by optimizing the geometric configuration parameters, such as tilting angle of the substrate holder and position of the evaporation source in a 1 000-mm-diameter planetary rotation stage （PRS）. We reveal that good film uniformity on convex spherical surfaces or flat substrates, as well as concave surfaces with weak to moderate curvatures can be obtained through appropriate tilting of the substrate holder. For 300-mm-diameter substrates with clear aperture to radius of curvature （CA/RoC） between 0.3 and 0.7, the achievable film uniformity is above 99%. The source position is optimized to achieve good film uniformity.     

Method to accurate calibrate deposition rates of EUV multilayer coatings

Random thickness error is an important factor which effects the calibration accuracies of deposition rates for extreme ultraviolet （EUV） multilayer coatings fabricated by sputter deposition techniques. A least square fitting method is proposed to determine deposition rates and extract random thickness errors accurately. The validity of this method is shown by evaluating two deposition systems with control abilities of -0.1 nm and better than 0.01 nm respectively.     

Nuclear data for the cyclotron production of ~（117）Sb and ~（90）Nb

This presented study is to make comparison of cross sections to produce ¹¹⁷Sb and ⁹⁰Nb via different reactions with particle incident energy up to 70 MeV as a part of systematic studies on particle-induced activations on enriched Sn, Y₂O₃ and ZrO₂ targets, theoretical calculation of production yield, calculation of required thickness of target and suggestion of optimum reaction to produce Antimony-117 and Niobium-90.     

旋转液体中固体颗粒运动的进一步讨论

通过分析旋转液体中的压强分布,说明了浸在液体中的固体颗粒向轴心运动的原因,以及该规律的实际应用.     

核弹头惰层厚度的反解方法

高分辨γ探测技术是一种可靠的核弹头核查技术.通过模拟计算和实验标定的方法，研究特定核弹头模型出壳γ射线强度与吸收材料厚度的关系，提出了一种简便的反解核弹头惰层厚度的方法，并讨论了该方法的应用条件.     

金刚石薄膜的结构特征对薄膜附着性能的影响

在不同实验条件下，用微波等离子体化学气相沉积设备在硬质合金(WC+6%Co)衬底上沉积了 具有不同结构特征的金刚石薄膜.用Raman谱表征薄膜的品质和应力，用压痕实验表征薄膜的 附着性能，考察了薄膜中sp²杂化碳含量、形核密度、薄膜厚度对薄膜附着性能 的影响.结 果表明：sp²杂化碳的缓冲作用使薄膜中sp²杂化碳的含量对薄膜中 残余应力有较大的影 响，从而使薄膜压痕开裂直径统计性地随sp²杂化碳含量的增加而减小；仅仅依 靠超声遗 留的金刚石晶籽提高形核密度并不能有效改变薄膜与硬质合金基体之间的化学结合状况，从 而不能有效提高薄膜在衬底上的附着性能；在薄膜较薄时，晶粒之间没有压应力的存在，开 裂直径并不明显随厚度增加而增加，只有当薄膜厚度增加到一定值，晶粒之间才有较强压应 力存在，开裂直径随厚度的增加而较为迅速地增加. 关键词： 金刚石薄膜 附着性能 2杂化碳')" href="#">sp²杂化碳 成核密度 薄膜厚度     

Determination of interface layer thickness of a pseudo two—phase system by extension of the Debye equation

The Debye equation with slit-smeared small angle x-ray scattering(SAXS) data is extended form an ideal two-phase system to a pseudo two-phase system with the presence of the interface layer,and a simple accurate solution is proposed to determine the average thickness of the interface layer in porous materials.This method is tested by experimental SAXS data,which were measured at 25℃,of organo-modified mesoporous silica prepared by condensation of tetraethoxysiland(TEOS) and methyltriethoxysilane(MTES) using non-ionic neutral surfactant as template under neutral condition.     

金属薄膜和超导体

来自中国和美国的科学家用量子工程技术，制造出厚度仅有20～30个原子的铅晶体薄膜，然后测试了这些薄膜进入超导态的转变温度，发现转变温度随薄膜的厚度有规律地改变，膜越薄，超导转变温度越高．一篇相关的研究评述指出，有些金属（比如银）的大块状态不超导，这些结果提出了将这些金属用量子工程技术转变为超导体的可能性。     

Influence of Thickness of Field Emission Characteristics of Nanometre Boron Nitride Thin Films

Nanometre boron nitride (BN) thin films with various thickness (54-135nm) were prepared on Si(100) by rf magnetic sputtering physical vapour deposition. The field emission characteristics of the BN thin films were measured in an ultrahigh vacuum system. A threshold electric field of 11V/μm and the highest emission current density of 240μA/cm^2 at an electric field of 23V/μm were obtained for the about 54-nm-thick BN film. The threshold electric field increases with increasing the thickness in the nanometre range. The Fowler-Nordheim plots show that electrons were emitted from BN to vacuum by tunnelling through the potential barrier at the surface of BN thin films.