Restriction of shot noise and material noise in a multilevel photochromic memory on signal-to-noise ratio

The recording density of multilevel photochromic memory is limited by the signal-to-noise ratio (SNR) of the readout signal. In this paper, shot noise and material noise are investigated through theoretical analysis of SNR. When the bandwidth of a system is less than 1MHz, the material noise takes a prominent position; when the bandwidth of the system is more than 10MHz, the shot noise becomes dominant. The thickness of recording layer can be optimized to maximize the SNR and reduce the influence of the bandwidth of the system on SNR.     

语音录制与播放系统在单片机的硬件实现

语音识别控制系统需要对语音进行录制与播放处理,利用单片机实现该功能可克服传统语音录制与播放系统需外接语音处理模块、体积大且使用较复杂的缺点。因此选用SPR4096存储器作为语音的数字化信号存储器件,利用凌阳16位单片机设计与实现语音录制与播放硬件系统。结果表明,该硬件系统降低了电路复杂度和制作成本,简单易行,具有有较高的实用价值。     

MULTIFRACTAL DECOMPOSITION OF FRACTALS WITH FINITE MEMORY

The authors study recursive structures with ＂finite memory＂ in Euclidean matric space and the multifractal decomposition of the corresponding fractals. For any two positive numbers q,β, and such a recursive structure, a linear operator V^q,β in finite dimensional space is defined. The multifractal spectrum is given by the spectral radius of Vq,^β.     

Phase transformation in Mg Sb_3Te thin films

Mg-doped Sb3Te films are proposed to improve the performance of phase-change memory （PCM）. We prepare Mg- doped Sb3Te films and investigate their crystallization behaviors, structural, optical and electrical properties. We find that Mg-doping can increase the crystallization temperature, enhance the activation energy, and improve the 10-year data retention of Sb3Te. Especially Mg25.19（Sb3Te）74.81 shows higher Tc （~ 190℃） and larger Ea （~ 3.49 eV）, which results in a better data retention maintaining for 10 yr at ~ 112 ℃. Moreover Ra/Rc value is also improved. These excellent properties make Mg-Sb-Te material a promising candidate for the phase-change memory （PCM）.     

部分耗尽绝缘层附着硅静态随机存储器总剂量辐射损伤效应的研究

通过分析部分耗尽绝缘层附着硅互补金属氧化物半导体静态随机存储器(SRAM)在动态偏置条件下的电学参数和功能参数随累积剂量的变化规律, 研究了绝缘层附着硅(SOI)工艺SRAM器件在⁶⁰Co-γ射线辐照后的总剂量辐射损伤效应及器件敏感参数与功能错误数之间的相关性,为进一步深入研究大规模SOI集成电路的抗总剂量辐射加固及其辐射损伤评估提供了可能的途径和方法.实验结果表明:辐射引起的场氧和埋氧漏电是功耗电流增大的主要原因; 阈值电压漂移造成输出高电平下降、低电平微小上升和峰-峰值大幅降低,以及传输延迟增大; 当总剂量累积到一定程度,逻辑功能因关断功能的失效而出现突变错误; 传输延迟和输出高电平与逻辑功能错误之间存在一定相关性.     

电致电阻效应及其机理研究

 在简单的金属/金属氧化物/金属三明治结构中,研究发现施加电压能够改变器件的电阻,而且这种改变是持久的且是可逆的。     

Three-Dimensional Finite Element Analysis of Phase Change Memory Cell with Thin TiO2 Film

A thin TiO2 layer inserted in a phase change memory （PCM） cell to form a deep sub-micro bottom electrode （DBE） is proposed and its electro-thermal characteristics are investigated with the three-dimensional finite element analysis. Compared with the conventional PCM cell with a SiN stop layer, the reset threshold current of the PCM cell with the TiO2 layer is reduced from 1.8 mA to 1.2 mA and the ratio of the amorphous resistance and crystalline resistive increases from 65 to 100. The optimum thickness of the TiO2 layer and the optimum height of DBE are 10nm and 200nm, respectively. Therefore, the PCM cell with the TiO2 layer can decrease the programming power consumption and increase heating efficiency. The TiO2 film is a better candidate for the SiN film in the PCM cell structure to prepare DBE and to reduce programming power in the reset operation.     

磁性随机存储器的研究进展

通过分析磁性随机存储器(MRAM)的基本原理,及其与现有的静态存储器(SRAM)、动态存储器(DRAM)和快闪存储器(Flash)的性能比较,探讨了MRAM作为下一代新型存储器的应用前景.     

多端口存储器控制器IP核的设计与实现

提出了一种通用的多端口存储器控制器的设计与实现方案,该方案采用AMBA（advanced microcon-troller bus architecture）总线,最多可支持6个AHB（advanced high-performance bus）主设备同时访问存储器;支持包括SRAM、ROM、NOR-FLASH、SDR-SDRAM、DDR-SDRAM在内的多种存储器;内部设计实现的仲裁器采用固定优先级和TimeOut机制相结合的仲裁策略.基于SMIC 0.13μm CMOS工艺库,芯片面积约为230653μm2,系统时钟为130 MHz.FPGA验证结果表明：该方案实现的存储器控制器能够充分利用存储器的带宽,提高系统的性能.