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51.
52.
Modeling of conducting bridge evolution in bipolar vanadium oxide-based resistive switching memory 下载免费PDF全文
We investigate the resistive switching characteristics of a Cu/VOx/W structure. The VOx film is deposited by radio- frequency magnetron sputtering on the Cu electrode as a dielectric layer. The prepared VOx sample structure shows reproducible bipolar resistive switching characteristics with ultra-low switching voltage and good cycling endurance. A modified physical model is proposed to elucidate the typical switching behavior of the vanadium oxide-based resistive switching memory with a sudden resistance transition, and the self-saturation of reset current as a function of compliance current is observed in the test, which is attributed to the conducting mechanism is discussed in detail. growth pattern of the conducting filaments. Additionally, the related 相似文献
53.
Electroforming-Free and Highly Uniform Al2O3 Resistive Random Access Memory by ALD-Based In Situ Hydrogen Plasma Treatment 下载免费PDF全文
Al2O3 resistive random access memory (RRAM) with electroforming-free characteristics, high stability and uni- form properties is fabricated. The effect of the in situ hydrogen plasma enhanced treatment on the device performance is investigated. The dominated conduction mechanisms of the devices are ohmic behavior at low fields and space charge limited charge injection at high fields. The great improvement in the device properties is attributed to the hydrogen plasma treatment with the Al2O3 film, and this simple while effective atomic layer deposition based plasma treatment process is expected to be useful for other RRAM material systems as well. 相似文献
54.
采用脉冲激光沉积技术在Pt/Ti/SiO2/Si衬底上沉积了非晶Lu2O3薄膜,制作了W和Ta作为顶电极的W/Lu2O3/Pt和Ta/Lu2O3/Pt堆栈结构器件,并运用Keithely4200-SCS测试平台分析了其电阻转变特性。在对器件加载电压后,Ta/Lu2O3/Pt器件未表现出阻变存储特性,然而W/Lu2O3/Pt表现出良好的双极性电阻转变特性,其高低阻态比大于103。经过大于1×104s的读电压,高低阻态的电阻值没有发生明显的变化,表现出良好的数据保持能力。通过对高低阻态的电流电压关系、电阻值与器件面积的关系和电阻值与温度的关系的研究,分析认为导电细丝的形成和破灭机制是导致W/Lu2O3/Pt器件发生电阻转变现象的主要原因。 相似文献
55.
The single-event effect(SEE) is the most serious problem in space environment.The modern semiconductor technology is concerned with the feasibility of the linear energy transfer(LET) as metric in characterizing SEE induced by heavy ions.In this paper,we calibrate the detailed static random access memory(SRAM) cell structure model of an advanced field programmable gate array(FPGA) device using the computer-aided design tool,and calculate the heavy ion energy loss in multi-layer metal utilizing Geant4.Based on the heavy ion accelerator experiment and numerical simulation,it is proved that the metric of LET at the device surface,ignoring the top metal material in the advanced semiconductor device,would underestimate the SEE.In the SEE evaluation in space radiation environment the top-layers on the semiconductor device must be taken into consideration. 相似文献
56.
为了研究阻变存储器导电细丝的形成位置和分布规律, 使用X射线光电子能谱研究了Ti/HfO2/Pt阻变存储器件单元中Hf 4f的空间分布, 得到了阻变层的微结构信息. 通过I-V测试, 得到该器件单元具有典型的阻变特性; 通过针对Hf 4f的不同深度测试, 发现处于低阻态时, 随着深度的增加, Hf4+化学组分单调地减小; 而处于高阻态和未施加电压前, 该组分呈现波动分布; 通过Hf4+在高阻态和低阻态下组分含量以及电子能损失谱分析, 得到高阻态下Hf4+组分的平均含量要高于低阻态; 另外, 高阻态和低阻态下的O 1s谱随深度的演变也验证了Hf4+的变化规律. 根据实验结果, 提出了局域分布的氧空位聚簇可能是造成这一现象的原因. 空位簇间的链接和断裂决定了导电细丝的形成和消失. 由于导电细丝容易在氧空位缺陷聚簇的地方首先形成, 这一研究为导电细丝的发生位置提供了参考. 相似文献
57.
The influence of interfacial barrier engineering on the resistance switching of In2O3:SnO2/TiO2/In2O3:SnO2 device 下载免费PDF全文
The I-V characteristics of In2O3:SnO2/TiO2/In2O3:SnO2 junctions with different interracial barriers are inves- tigated by comparing experiments. A two-step resistance switching process is found for samples with two interfacial barriers produced by specific thermal treatment on the interfaces. The nonsynchronous occurrence of conducting filament formation through the oxide bulk and the reduction in the interracial barrier due to the migration of oxygen vacancies under the electric field is supposed to explain the two-step resistive switching process. The unique switching properties of the device, based on interracial barrier engineering, could be exploited for novel applications in nonvolatile memory devices. 相似文献
58.
Enhanced Performance of Phase Change Memory Cell Element by Initial Operation and Non-Cumulative Programming 下载免费PDF全文
A phase change memory (PCM) device, based on the Ge2Sb2Te5 (GST) material, is fabricated using the standard 0.18-μm CMOS technology. After serials of detailed experiments on the phase transition behaviors, we find that the RESET process is strongly dependent on the state of the inactive area and the active area affects the SET process dramatically. By applying a 5-mA current-voltage (I — V) sweep as initial operation, we can reduce the voltage drop beyond the active area during the RESET process and the overall RESET voltage decreases from 3 V plus to 2.5 V. For the SET operation, a non-cumulative programming method is introduced to eliminate the impact of randomly formed amorphous active area, which is strongly related to the threshold switching process and SET voltage. Combining the two methods, the endurance performance of the PCM device has been remarkably improved beyond 1 × 106 cycles. 相似文献
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60.
本文详细研究了在不同氧化层和铁磁层厚度情况下, 底层CoFeB/AlOx/Ta结构和 顶层AlOx/CoFeB/Ta结构中的垂直磁各向异性. 在底层CoFeB/AlOx/Ta结构中观察到了垂直磁化的磁滞回线, 证明了其垂直易磁化效应的存在; 而在顶层AlOx/CoFeB/Ta结构中却没有观察到类似的磁滞回线. 对这种对称结构中的非对称现象进行了分析. 研究还发现不同的氧化层和铁磁层厚度均会影响层间界面相互作用的强度, 从而导致结构的垂直磁化曲线矫顽力大小发生改变. 这项研究将对基于AlOx氧化层垂直磁隧道结的研制具有重要的意义.
关键词:
垂直磁各向异性
磁隧道结
随机存储器 相似文献