光注入半导体激光器产生可调谐高频微波

利用光注入半导体激光器产生的单周期振荡,实验获得了61—129 GHz范围内频率连续可调的微波光信号.同时利用半导体激光器速率方程,对光注入半导体激光器产生高频微波进行了数值模拟.模拟和实验结果均表明微波信号产生于注入光和激光器腔模之间的拍频现象,其频率随着注入光强度和波长失谐的增大而增大,模拟结果预测该方法可以产生频率大于40 GHz的高频微波. 关键词： 光通信 光生微波 拍频 半导体激光器     

基于红色荧光染料3-(dicyanomethylene)-5, 5-dimethyl-1-(4-dimethylamino-styryl) cyclohexene的高性能白色有机电致发光器件

研究了基于红色荧光染料3-（dicyanomethylene）-5, 5-dimethyl-1-（4-dimethylamino-styryl） cyclohexene（DCDDC）的白色有机电致发光器件的性能,分别制备了基于DCDDC超薄层和DCDDC掺杂主体材料的两种器件结构: 1）indium-tin oxide（ITO）/N, N′-diphenyl-N, N′-bis（1-naphthyl-pheny1）-1, 1′-biphenyl-4, 关键词： 有机电致发光器件 白色发光 红色荧光染料 掺杂     

Numerical Calculation of SAW Propagation Properties at the x-Cut of Ferroelectric PMN-33%PT Single Crystals

Surface acoustic wave （SAW） properties at the x-cut of relaxor-based 0.67Pb（Mg1/3Nb2/3）O3-0.33PbTiO3 （PMN- 33%PT） ferroelectric single crystals are analyzed theoretically when poled along the [001]c cubic direction. It can be found that PMN-33%PT single crystal is a kind of material with a low phase velocity and high electromechanical coupling coefficient, and the single crystal possesses some cuts with zero power flow angle. The results are based on the material parameters at room temperature. The conclusions provide device designers with a few ideal cuts of PMN-33%PT single crystals. Moreover, choosing an optimal cut will dramatically improve the performance of SAW devices, and corresponding results for crystal systems working at other temperatures could also be figured out by employing the method.     

材料的微细加工技术研究

在微传感器、执行器、集成光学器件、高分辨探测器等的研究中,材料的非机械微细加工技术是一种必不可少的成型技术。通过相关课题的研究,开展了反应离子刻蚀技术和聚焦离子束精密加工技术研究,进行了金刚石薄膜等材料的微细加工技术实验研究,掌握了基本的实验流程和实验技能。     

80K高频无磁非金属脉冲管制冷机

介绍了高频脉冲管制冷机冷指无磁非金属材料的选择、加工以及实验优化工作.制作的高频无磁脉冲管制冷机冷指在风冷,2.3 MPa 充气压力,44 Hz,70 W 电功率输入条件下,最低达到 73.4 K 的无负荷最低温度;60 W 电功率输入,最低温度为 74.0 K,在 80 K 时可以提供 0.1 W 的制冷量.本文为高频脉冲管制冷机直接冷却相关低温超导器件提供了坚实的基础.     

新型双间隙虚阴极振荡器的理论分析和数值模拟

 该新型双间隙虚阴极振荡器的互作用区为一带孔金属薄膜隔开的两个圆柱形谐振腔;器件采用侧向提取同轴输出的方法,具有输出效率高和输出模式纯的优点;第一阳极薄膜采用了局部薄膜结构。对互作用腔进行冷腔分析,计算得到互作用腔Ⅰ和Ⅱ的品质因子分别为6 960和71.8,共振频率为2.3 GHz。当电子束电压为515 kV、电流为10 kA时,通过参数优化,模拟得到周期平均峰值功率大于570 MW、频率约2.4 GHz的微波输出,效率达到11%。模拟还发现电子束的最佳阻抗值约为51.5 W;电子束的输入功率在较大范围内变化时,器件的输出效率保持大于10%;在一定的范围内,器件的输出效率随电子束密度的增加而增加。对器件中由于电子能量沉积而引起的阳极膜的温升进行了估算,得到膜的最高温度为434 K,远低于熔点933 K。     

同轴插板式相移器数值模拟与实验研究

 根据同轴插板式相移器的基本工作原理,对该相移器进行了数值模拟与优化设计,并重点研究了其结构工艺和相移控制方式。在此基础上研制了一个中心频率为4.1 GHz的相移器模型,并通过矢量网络分析仪进行了实验测量。测量结果表明：在4.0～4.2 GHz的频带范围内,该相移器可实现90°的相移量,相移量化精度为1°,相移精度为±１０°,相移器插损1.5 dB。     

A Compact Magnetically Insulated Line Oscillator with New-Type Beam Dump

We present a compact improved model of the magnetically insulated line oscillator with new-type beam dump and other novel features. In the experiments, high-power microwave of the TM01 mode is generated from the device with a frequency range of 1.73-1.78 GHz and a peak power level of above 2 GW, when the diode voltage is taken in the range 520-540kV, and the diode current is in the range 58-62kA. This confirms the simulation results.     

Deposition of Hydrogen-Free Silicon Nitride Thin Films by Microwave ECR plasma Enhanced Magnetron Sputtering at Room Temperature

Hydrogen-free silicon nitride （SiNx） films were deposited at room temperature by microwave electron cyclotron resonance （MW-ECR） plasma enhanced unbalance magnetron sputtering system. Both Fourier-transform infrared spectroscopy and x-ray photoelectron spectroscopy are used to study the bonding type and the change of bonding structures of the silicon nitride films. The results indicate that the chemical structure and composition of SiNx films deposited by this technique depend strongly on the N2 flow rates, the stoichiometric SiNx film, which has the highest hardness of 22.9 GPa, could be obtained at lower N2 flow rate of 4 sccm.