ZnO/SiO2 复合薄膜的光学性能

采用溶胶-凝胶法在玻璃衬底上制备ZnO/SiO₂复合薄膜,分别用XRD、TEM、SEM对样品的结构和形貌进行表征,并研究了不同ZnO含量对复合薄膜透过率及荧光特性的影响。结果表明,样品经500 ℃退火处理生成了SiO₂和ZnO,其晶粒尺寸为18.7 nm,薄膜具有双层结构。复合薄膜的透过率随着其中ZnO含量的增加而降低,禁带宽度减小,光学吸收边红移。样品在355 nm波长激发下产生了384 nm的紫外发射峰和440 nm的蓝光发射带,并随ZnO含量的增加而增强,它们分别来自ZnO的电子-空穴复合发光和缺陷发光,及ZnO/SiO₂复合薄膜双层结构的缺陷发光。     

气泡/泡沫覆盖粗糙海面电磁散射的修正双尺度法研究

提出了风驱粗糙海面覆盖水气泡层的‘体-面’复合模型.基于修正的双尺度粗糙面散射理论、MIE理论和矢量辐射传输理论,比较了水气泡与实心水粒子的电磁散射特性的差异,分析了海面泡沫覆盖率与风速、气-海温差的关系.在有、无泡沫层情形下,采用高斯和经验海谱,讨论了单站、双站散射系数与入射角、方位角、风速、风向、极化等参量的关系,并将数值计算的结果与相关文献的测量值进行了比较和分析. 关键词： 电磁散射 海面复合模型 修正双尺度法 MIE     

碳纳米管-硅纳米线复合结构的形成和热稳定性

通过分子动力学方法模拟了在碳纳米管内填充一定数目的半导体元素硅形成碳纳米管-硅纳米线复合结构的过程,并采用Lindemann指数研究了这种复合结构的热稳定性．计算结果表明,当考虑碳纳米管和硅纳米线轴向方向的周期性边界条件之后,在C（13,0）和C （14,0）碳纳米管内能够形成亚稳结构的硅纳米线Si₁₆NW和Si₂₀NW,从而获得一种碳纳米管-硅纳米线的新型复合结构．通过计算这种复合结构的Lindemann指数,可以看到由于碳纳米管的保护作用,碳纳米管包裹的硅纳 关键词： 复合结构 纳米线 碳纳米管 分子动力学     

光学稀疏孔径成像系统复合阵列设计的仿真研究

在典型环形、典型Golay-6型和典型Y型阵列结构的基础上,研究了两种不同的复合孔径阵列构造方式.利用仿真实验对系统进行模拟成像及图像重构,并运用相关系数对成像结果进行评价.结果表明:对不同类型的复合孔径阵列,构造方式对成像质量的影响是不同的,并不具有一致规律;应针对主阵列结构的特征去选择其子阵列的构造方式,做到阵列优化.     

量子阱共振腔增强型光电探测器的高功率特性

通过测量1．55Mm量子阱共振腔增强型光电探测器的光电流随反向电压和光功率的变化关系,以及模拟能带结构、电场分布等特性,研究了量子阱共振腔增强型光电探测器的高功率特性．分析了光电流的产生机制,测量了1．064μm量子阱共振腔增强型光电探测器的光电响应,模拟了具有不同势垒高度的量子阱共振腔增强型光电探测器的光电响应．从实验和模拟两方面证明了量子阱的势垒高度是影响量子阱共振腔增强型光电探测器高功率特性的最主要因素．     

开槽前扩孔及复合角对气膜冷却的影响

本文对开槽前扩孔及在此基础上加30°、45°和60°不同角度复合角的气膜冷却结构进行了数值模拟,计算了指定冷却壁面的温度场分布以及冷却效率.结果表明:引入复合角后,能够改善冷却气膜在壁面的横向分布,复合角越大,气膜分布越均匀.在高吹风比下,复合角结构能够产生较大的气膜覆盖范围和较好的冷却效果.     

Complex Wave Solutions for （2＋1）-Dimensional Modified Dispersive Water Wave System

The extended Riccati mapping approach^[1] is further improved by generalized Riccati equation, and combine it with variable separation method, abundant new exact complex solutions for the （2＋1）-dimensional modified dispersive water-wave （MDWW） system are obtained. Based on a derived periodic solitary wave solution and a rational solution, we study a type of phenomenon of complex wave.     

Realization of Tip Tilting By 8-Step Line Tilting

By direct calculation of rotation matrices of SO（3）, we show how certain specific sequence of eight consecutive rotations of digital angles can yield a tilting of a facet mirror. We also design a detailed program specifically to tilt an array of mirrors from planar orientation to the required focusing orientation. We describe how to use the 8-step to realize the focusing of the mirror array. We have found, in our designed program, an important feature of row-sharing during the rotations for the columns and similarly the column-sharing during the rotations for the row. This feature can save a lot of operating time during the actual realization of the mechanical movements.     

Phase-Transition and Magnetic Moment of the Gd3+ Ion in the Gd2Fe17 Compound

The structure and magnetic phase transitions of the Gd2Fe17 compound are investigated by using a differential thermal/thermogravimetric analyzer, x-ray diffraction, and magnetization measurements. The result shows that there are two phase structures for the Gd2Fe17 compound： the hexagonal Th2Nilr-type structure at high temperatures （above 1243℃）, and the rhombohedral Th2Zn17-type structure, respectively. A method to measure the magnetic moments of the Gd-sublattice and the Fe-sublattice in the Gd2Fe17 compound is presented. The moments of the Gd-sublattice and the Fe-sublattice in the Gd2Fe17 compound from 77 to 500 K are measured in this way with a vibrating sample magnetometer. A detailed discussion is presented.     

Structural Feature and Solute Trapping of Rapidly Grown Ni3Sn Intermetallic Compound

The rapid dendritic growth of primary Ni3Sn phase in undercooled Ni-30.9%Sn-5%Ge alloy is investigated by using the glass fluxing technique. The dendritic growth velocity of Ni3Sn compound is measured as a function of undercooling, and a velocity of 2.47m/s is achieved at the maximum undercooling of 251 K （0.17TL）. The addition of the Ge element reduces its growth velocity as compared with the binary Ni75Sn25 alloy. During rapid solidification, the Ni3Sn compound behaves like a normal solid solution and it displays a morphological transition of ＂coarse dendrite-equiaxed grain-vermicular structure＂ with the increase of undereooling. Significant solute trapping of Ge atoms occurs in the whole undercooling range.