Pseudo-Spin-Valve Trilayer Using Amorphous CoNbZr Layer： Giant Magnetoresistance, Domain Structures and Potentials for Spin-Electronic Devices

We propose a pseudo-spin-valve (PSV) trilayer using amorphous CoNbZr Mloy for soft magnetic layers. The giant magnetoresistance (GMR), domain structures and their variation upon thermal annealing are investigated. The GMR effect is not only stable up to 300℃ but also enhanced due to the improvement of the interfaces between Cu and magnetic layers. With high annealing temperature, the magnetoresistance (MR) ratio decreases rapidly as a result of serious layer interdiffusion. Dense stripe domains, which disappear after annealing at 300℃ for 1h, are observed in the sandwiched films. It is found that after patterning to elliptic stripe with aspect ratio of 6:1, the trilayers have a single domain and their MR ratio increases. The dynamic MR behaviour under an ac magnetic field indicates that the patterned stripes have good linear MR responses. Therefore, it is believed that the CoNbZr/Cu/Co PSV trilayers have strong potentials for spin-electronic devices including magnetic random access memory.     

A Simple Calculation Approach for the Second－Harmonic Sound Beam Generated by an Arbitrary Distribution Source

We present a simple calculation approach for the fundamental and second-harmonic sound beams with an arbitrary distribution source in the quasilinear approximation. The analysis is based on the assumption that the source function with an arbitrary geometry and distribution is expanded into the sum of a set of two-dimensional Gaussian functions. The two- and five-dimensional integral solutions for the fundamental and second-harmonic fields are, respectively, reduced in terms of Gaussian functions and simple one-dimensional integrals. The numerical evaluation of field distributions is then greatly simplified.     

超磁致伸缩材料国际会议情况介绍

日本高科技协会，于1996年11月6日-8日在美国夏威夷火努鲁鲁的日本东海大学太平洋中心组织召开了稀土超磁致伸缩材料基础和应用研究的国际会议．超磁致伸缩材料GMM（GiantManetostrictiveMa．tenals）为稀土元素钛Tb（Terbium）、镐Dy（DysPro－sium）和铁Fe的合金化合物，其基     

光功能纳米陶瓷材料研究取得重要成果

~~光功能纳米陶瓷材料研究取得重要成果@汪道友~~     

High—Efficiency Organic Double—Quantum—Well Light—Emitting Devices Using 5,6,11,12—Tetraphenylnaphthacene Sub—monolayer as Potential Well

The double-quantum-well organic light-emitting devices of indium-tin-oxide (ITO)/NPB (50nm)/rubrene (0.05nm)/NPB (4nm)/rubrene (0.05nm)/Alq3 (50nm)/LiF (0.5nm)/Al were fabricated, in which N,N-bis-(1-naphthyl)-N,N‘-diphenyl-1,1‘-biphenyl-4,4‘‘‘‘‘‘‘‘-diamine (NPB) is used as a barrier potential or hole transport layer, tris (8-hydroxyquinoline) aluminium (Alq3) used as electron transport layer, and 5,6,11,12-tetraphenylnaphthacene (rubrene) as a potential well and emitter. The brightness can reach 18610cd/m^2 at 13V. The maximum electroluminescent efficiency of the device was 6.61cd/A at 7V, which was higher than that of common dope-type devices. In addition, the electroluminescence efficiency is relatively independent of the drive voltage in the range from 5 to 13V.     

激发态卟啉衍生物研究(Ⅶ)——取代基对卟啉—硝基苯化合物发光特性的影响

本文报导共价链相连的X-P-Y“三合板”型化合物在二甲基甲酰胺(DMF)和苯溶液中的发光特性.结果发现:引入取代基X=Cl—,CH3O—和Y=苯、硝基苯对中心卟啉的吸收和荧光光谱均无明显影响,仅其峰值频率将因溶剂不同而有所偏移.此外,由Cl—取代的卟啉—苯的荧光强度总比CH3O—取代时高;若将Y取代基由苯改换为硝基苯时,将使CH3O—P—Y化合物的荧光增强,但在Cl—P—Y化合物中则出现相反的趋势.不论在何种化合物中,在Y取代基中的苯环上引入NO2—基后,均可使其消光系数减小,而且当硝基在邻位取代时,这一效应更为显著.所有这些变化规律均不因溶剂不同而异.如果我们认为X—P—Y化合物的发光强度变化和其中心的卟啉大环上的π电子云密度偏移有规律性的关联,那么上述的一些取代基效应是可以理解的.进而,我们认为:本文所报导的事实将有助于充实巧妙设计高效利用太阳能的分子体系的科学依据.     

我国第一台FED荧光粉发光性能测试系统运转正常

在各种平板显示器件中，场发射显示(FED)是与阴极射线管(CRT)最为接近的一种显示方式，同属阴极射线激发荧光粉发光，因此，FED被认为是一种非常有潜力的显示技术。与CRT相比，FED是在低电压大电流下工作，传统的CRT荧光粉用在FED上会出现许多问题。为此，北京有研稀土新材料股份有限公司等多家单位都在进行FED荧光粉的研制。但在研制过程中，由于没有低压阴极射线激发下荧光粉发光性能测试的仪器，FED荧光粉的研制工作进展缓慢。     

稀土铽配合物的有机发光二极管

有机小分子和有机高分子的发光二极管在可见光区内有非常高的量子效率，因而受到人们的高度重视．采用二胶（TPD），8羟基喹啉铝（Alq3）等有机小分子作为空穴和电子输运层所作的发光二极管[1]的量子效率可达10％，采用聚对苯乙炔（PPV）高分子聚合物作空穴输运层，有机小分子2