Field plate structural optimization for enhancing the power gain of GaN-based HEMTs

A novel source-connected field plate structure, featuring the same photolithography mask as the gate electrode, is proposed as an improvement over the conventional field plate (FP) techniques to enhance the frequency performance in GaN-based HEMTs. The influences of the field plate on frequency and breakdown performance are investigated simultaneously by using a two-dimensional physics-based simulation. Compared with the conventional T-gate structures with a field plate length of 1.2 μm, this field plate structure can induce the small signal power gain at 10 GHz to increase by 5-9.5 dB, which depends on the distance between source FP and dramatically shortened gate FP. This technique minimizes the parasitic capacitances, especially the gate-to-drain capacitance, showing a substantial potential for millimeter-wave, high power applications.     

Ab initio investigation of the structural and unusual electronic properties of α-CuSe （klockmannite）

In this article, a computational analysis has been performed on the structural properties and predominantly on the electronic properties of the α-CuSe （klockmannite） using density functional theory. The studies in this work show that the best structural results, in comparison to the experimental values, belong to the PBEsol-GGA and WC-GGA functionals. However, the best results for the bulk modulus and density of states （DOSs） are related to the local density approximation （LDA） functional. Through utilized approaches, the LDA is chosen to investigate the electronic structure. The results of the electronic properties and geometric optimization of α-CuSe respectively show that this compound is conductive and non-magnetic. The curvatures of the energy bands crossing the Fermi level explicitly reveal that major charge carriers in CuSe are holes, whose density is estimated to be 0.86×1022 hole/cm3. In particular, the Fermi surfaces in the first Brillouin zone demonstrate interplane conductivity between （001） planes. Moreover, the charge carriers among them are electrons and holes simultaneously. The conductivity in CuSe is mainly due to the hybridization between the d orbitals of Cu atoms and the p orbitals of Se atoms. The former orbitals have the dual nature of localization and itinerancy.     

一种基于增益调制技术的全光纤化脉冲Yb光纤激光器

以波长为975 nm的半导体激光器作为泵浦源,周期性地脉冲泵浦一个包含Yb掺杂光纤和光纤光栅对的Yb光纤激光器,实现了基于增益调制技术的全光纤化高功率Yb光纤激光器的稳定脉冲输出.在50 kHz重频下,采用20 W的泵浦功率和2.4 μs的泵浦脉冲宽度,获得了1 060 nm波长脉冲宽度仅100 ns的稳定脉冲激光输出,单脉冲激光能量约为20 μJ.以此作为脉冲激光种子进行功率放大,获得了性能稳定的全光纤结构高功率脉冲激光输出,放大后单脉冲能量超过200 μJ,激光放大器斜率效率达到60%.     

高导无氧铜杆的冲击拉伸断裂系列实验以及基于样本体积单元的分析

采用Hopkinson装置和一种基于一级气体炮的高速冲击拉伸断裂装置,研究了无刻槽高导无氧铜 (OFHC)杆在一系列冲击拉伸速度下的断裂。当冲击拉伸速度大于40m/s时,断裂位置总在冲击拉伸端附 近,此速度被确定为OFHC的实验临界冲击拉伸速度。一种受单轴冲击拉伸荷载的、中心含椭球空穴的样本 体积单元被用于数值模拟所含空穴的增长与失稳的过程。OFHC的J-C与Z-A 本构关系用于描述基体材料 的动态响应。讨论了空穴失稳条件并提出以空穴形状演化为判据,比较了空穴失稳时的样本体积单元平均径 向应变与无刻槽杆的冲击断裂应变。也用这种样本体积单元模型分析了OFHC的实验临界冲击拉伸速度。     

Constant barrier strategies in a two-state Markov-modulated dual risk model

In this paper,we consider the dividend problem in a two-state Markov-modulated dual risk model,in which the gain arrivals,gain sizes and expenses are influenced by a Markov process.A system of integrodifferential equations for the expected value of the discounted dividends until ruin is derived.In the case of exponential gain sizes,the equations are solved and the best barrier is obtained via numerical example.Finally,using numerical example,we compare the best barrier and the expected discounted dividends in the two-state Markov-modulated dual risk model with those in an associated averaged compound Poisson risk model.Numerical results suggest that one could use the results of the associated averaged compound Poisson risk model to approximate those for the two-state Markov-modulated dual risk model.     

四阶强阻尼波动方程的混合控制体积法

本文利用混合控制体积方法在三角网格剖分下求解四阶强阻尼波动方程.通过使用最低阶Raviart-Thomas混合有限元空间和引入迁移算子把解函数空间映射成试探函数空间,构造了半离散和全离散的混合控制体积格式,得到了最优阶误差估计.     

锥体积泛函与仿射不等式(英文)

本文研究了凸多胞形的锥体积泛函.利用投影体以及Lutwak、杨和张最近所建立的仿射等周不等式,得到了刻划平行四边形特征的一个崭新不等式和用锥体积泛函以及投影体的体积所表达的关于配极体体积的严格下界.     

调谐耦合场作用下的电磁诱导透明和增益

在通常的A型三能级系统中,耦合场和探测场分别与一对光学跃迁能级发生相互作用,使探测吸收曲线上出现线宽极窄的电磁诱导透明(Electromagnetically Induced Transparency,EIT)特性.本文采用调谐耦合场同时激励两个基态精细结构能级与激发态能级之间的跃迁,使系统同时呈现EIT和自发诱导相干...     

高马赫数高压力的氧碘化学激光器阵列喷管的数值模拟

 采用计算流体力学方法,研究了以氮气为载气的新型高总压氧碘化学激光器(COIL)阵列喷管。模拟结果表明:采用高马赫数的氮气流引射低马赫数的氧气流,可以提高光腔出口的驻点压力;高超声速的氮气与声速的氧气混合较慢,在喷管出口安装翼片有利于增强气流混合;喷管出口安装大翼片,翼片诱导的横向涡可以到达氮喷管的中心,光腔内混合比较充分。通过采用10组分21反应的化学反应模型,模拟了阵列喷管内多组分气体的混合和化学反应过程。模拟结果表明：光腔内生成了激发态碘原子和基态碘原子,光腔中获得了正增益,而且光腔出口的总压也由2.6 kPa提升至28.9 kPa。     

混合物物态方程的计算

 在采用体积相加原理计算混合物物态方程的基础上,建立了一种物理模型确定混合物温度。根据混合物中各组分温度和压强平衡条件,采用压强-密度迭代方法计算给出混合物物态方程,编制了两种组分的混合物物态方程计算程序。为检验建立的温度模型的合理性及程序的有效性,分析了不同密度、温度状态的氢（H2）和钨（W）组成的混合物状态参量,计算了以下情形及其组合情形的混合物物态方程：H₂和W以不同质量比混合;质量比固定,单组分状态不同;温度区间和密度区间不同。研究表明:实际应用中在建立的混合物温度模型基础上确定的混合物物态方程是合理的。