二维剪切流的粘性-无粘湍流干扰理论

对二维不可压缩近壁剪切湍流,本文提出一个粘性-无粘湍流干扰理论.主要内容有:从分子粘性考虑出发确定干扰湍流的流动结构及其物理尺度,导出空间为小尺度的局部流动结构随顺流距离的演变规律,导出支配干扰湍流流动的简化Reyno-lds(SR)方程和扩散抛物化K-ε方程.该SR方程是作者早先提出的简化Navier-Stokes(SNS)方程的湍流形式,它的重要性质是“简化运算”和时间Reynolds平均运算的顺序可以交换.关于最大湍流剪应力、本理论计算值与实验测量值很好相符.经典湍流边界层理论、Clauser平衡湍流边界层以及湍流分离Triple-deck理论均是本文理论的特例.证实了顺流方向长度尺度随干扰增强而显著减小的实验结论.     

利用非参数方法对上海股市周末效应的研究

本文首先利用基本统计分析和Kolmogorov -Smirnov检验发现沪市指数收益率不服从正态分布 ,随后利用了K -W检验考察周末效应的存在性 ,利用M -W检验考察周末效应的模式 ,最后利用了Levene检验来对收益率序列的方差进行分析 ,得出上海股市存在“二、五”效应的结论。并从结算制度、信息流的影响、信息披露制度等方面分析了成因。     

磁场和磁场力的相对性

静止的带电体只激发静电场，对电荷的作用只有静电场力；运动的带电体既激发电场，又激发磁场，对电荷的作用既有电场力又有磁场力．所以，磁场是电场的相对论效应．本文通过两个具体例子，说明了这一观点．     

量子尺寸效应对原子表面扩散运动具有调制作用

近日，中科院物理所表面物理国家重点实验室SF4研究组及其合作者在薄膜生长动力学研究中取得新进展．他们从实验和理论上研究了Si（111）单晶衬底上Pb薄膜中的厚度变化对原子表面扩散运动的影响，证明了量子尺寸效应对原子表面扩散运动的调制作用．该成果被选作封面图片发表在美国《物理评论快报》上．     

巨磁电阻效应——2007年诺贝尔物理学奖简介

瑞典皇家科学院宣布，法国科学家阿尔伯特·费尔（Albert Vert）和德国科学家彼得·格鲁伯格（Peter Grunberg），共同获得2007年诺贝尔物理学奖．获奖的原因是这两位科学家先后独立发现了“巨磁电阻”（giant magnetoresistance，GMR）效应．这个发现引发的技术进步极大地提高了计算机硬盘磁头的数据读取能力，使硬盘无论从容量还是体积上都产生了质的飞越．这个发现还导致了新一代磁传感器的出现，而且巨磁电阻被认为是纳米技术最重要的应用之一．     

Motional Stark Effect and Its Active Cancellation in Diamagnetic Spectrum of Barium

With time-of-flight and electric field ionization detection technique, we investigate the motional Stark effect for highly excited Rydberg barium in high magnetic field and its active cancellation experimentally. In the experiment, the atom beam is aligned at a small angle of 15° with respect to the magnetic field. The motional Stark effect cancellation is demonstrated on two sets of. circularly polarized spectra in static magnetic field B = 1.00000 Tesla and B = 1.70000 Tesla, respectively, although the effect is very small （- 3.5 Vcm^-1） in our apparatus configuration.     

Numerical Simulation of the Elastic Shrinkage Induced by Portevin-Le Chatelier Effect

A new one-dimensional phenomenological model based on the dynamic strain aging mechanism is developed. In order to account for the elastic shrinkage induced by the Portevin-Le Chatelier effect, elastic deformation is considered under the boundary conditions of the present model. The simulated results are found to be in good agreement with the experimental observations.     

Annealing effect on magnetic anisotropy in ultrathin（Ga,Mn）As

We investigated the effect of low temperature annealing on magnetic anisotropy in 7-nm ultrathin Ga0.94Mn0.06As devices by measuring the angle-dependent planar Hall resistance(PHR).Obvious hysteresis loops were observed during the magnetization reversal through the clockwise and counterclockwise rotations under low magnetic fields(below 1000 Gs,1 Gs = 10-4 T),which can be explained by competition between Zeeman energy and magnetic anisotropic energy.It is found that the uniaxial anisotropy is dominant in the whole measured ferromagnetic range for both the as-grown ultrathin Ga0.94Mn0.06As and the annealed one.The cubic anisotropy changes more than the uniaxial anisotropy in the measured temperature ranges after annealing.This gives a useful way to tune the magnetic anisotropy of ultrathin(Ga,Mn)As devices.     

Transport through artificial single-molecule magnets: Spin-pair state sequential tunneling and Kondo effects

The transport properties of an artificial single-molecule magnet based on a CdTe quantum dot doped with a single Mn+2 ion(S=5/2) are investigated by the non-equilibrium Green function method.We consider a minimal model where the Mn-hole exchange coupling is strongly anisotropic so that spin-flip is suppressed and the impurity spin S and a hole spin s entering the quantum dot are coupled into spin pair states with(2S+1) sublevels.In the sequential tunneling regime,the differential conductance exhibits(2S+1) possible peaks,corresponding to resonance tunneling via(2S+1) sublevels.At low temperature,Kondo physics dominates transport and(2S+1) Kondo peaks occur in the local density of states and conductance.These peaks originate from the spin-singlet state formed by the holes in the leads and on the dot via higher-order processes and are related to the parallel and antiparallel spin pair states.