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本文报道了一种用于堆叠结构有机电致发光器件的新的电荷生成层: LiF/Al/V2O5,采用这种电荷生成层的堆叠器件的两个发光单元互相独立,不受影响.说明在外加电场下,这种电荷生成层具有向邻近的发光单元注入电子空穴的能力.而堆叠了两个相同发光单元的器件的电流效率在相同的电流密度下约为普通单层结构的1.7倍.同时这种电荷生成层避免了溅射indium tin oxide(ITO)和金属、有机物共掺,只需要热蒸发,生长工艺简单.
关键词:
堆叠结构
有机电致发光器件
电荷生成层 相似文献
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在对俘获场磁体的脉冲充磁过程进行三维仿真时,现有的数值模拟方法有待具体分析比较,同时由于计算时间长和收敛困难,难以实现对大规模带材堆叠的模拟。针对以上问题,系统分析了H模型、H均一化模型和T-A模型的三维脉冲充磁仿真,对比了它们在77 K时不同堆叠层数下的俘获场、磁化损耗和计算时间,并基于以上模型提出了分组合并的简化模型。结果表明H均一化模型和T-A模型的计算误差随层数的增加而减小,验证了分组合并模型的有效性,并成功对上百层的堆叠进行了仿真。因此,分组合并模型解决了三维大规模堆叠有限元仿真困难的问题。 相似文献
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Stacked ruthenium (Ru) nanocrystals (NCs) are formed by rapid thermal annealing for the whole gate stacks and embedded in memory structure, which is compatible with conventional CMOS technology. Ru NCs with high density (3 × 10^12 cm-2), small size (2 4nm) and good uniformity both in aerial distribution and morphology are formed. Attributed to the higher surface trap density, a memory window of 5.2 V is obtained with stacked Ru NCs in comparison to that of 3.5 V with single-layer samples. The stacked Ru NCs device also exhibits much better retention performance because of Coulomb blockade and vertical uniformity between stacked Ru NCs. 相似文献
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通过对传统数字滤波和Birge-Massart小波阈值法的比较,对闪电瞬态电场信号进行了去噪研究。构建了双指数衰减脉冲信号并在其上叠加了高斯白噪声信号来仿真闪电瞬态电场实测波形,通过计算去噪前后信号的均方误差和幅值误差,比较了加权平滑滤波、FIR数字低通滤波器和小波阈值法的去噪效果,从处理仿真波形和实测波形结果可以发现,小波阈值去噪方法明显优于另外两种传统滤波方法。通过比较仿真信号由不同小波分解层数去噪结果的均方误差和幅值误差,确定在对闪电电场实测信号的去噪过程中,小波系数分解层数应选5~7。 相似文献
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聚合物电解质膜燃料电池(PEMFCs)具有高能量密度、高功率密度以及零排放等优点,被认为是一种高效、实用的发电装置.然而,PEMFCs阴极氧还原反应(ORR)的动力学缓慢,需要使用大量的铂(Pt)催化剂,其成本高、资源有限,因此,开发用于ORR的高性能、低成本的非贵金属催化剂(NPMCs)尤为重要.在NPMCs中,过渡金属(Fe,Co,Ni,Cu,Zn,Mn等)-氮-碳复合材料,尤其是Fe-Nx-C,被认为是一类非常有前景的代Pt催化剂.但此类催化剂存在催化活性低、电化学稳定性差等问题.为了获得高性能的NPMCs,催化剂创新性的设计和合成受到高度关注.研究表明,在惰性气氛下高温热解含Fe、N和C的化学物质是制备Fe-Nx-C催化剂的有效途径.在高温热解过程中,形成的吡啶-N可进一步键合Fe原子形成Fe-N4物种,Fe-N4已被证实是高ORR活性的催化位点.然而,高温热解制备Fe-Nx-C催化剂时,有两个主要问题制约催化剂性能的提高:一方面,原子Fe可以转化为聚集形态的Fe基纳米... 相似文献
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Infuence of interface roughness on the reflectivity of Tungsten/boron-carbide (W/B4C) multilayers varying with bi-layer number, N, is investigated. For W/B4C multilayers with the same design period thickness of 2.5 nm, a real-structure model is used to calculate the variation of reflectivities with N = 50, 100, 150, and 200, respectively. Then, these multilayers are fabricated by a direct current (DC) magnetron sputtering system. Their reflectivity and scattering intensity are measured by an X-ray diffractometer (XRD) working at Cu Kα line. The X-ray reflectivity measurement indicates that the reflectivity is a function of its bi-layer number. The X-ray scattering measured results show that the interface roughness of W/B4C multilayers increases slightly from layer to layer during multilayer growing. The variation of the reflectivity and interface roughness with bi-layer number is accurately explained by the presented realstructure model. 相似文献
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Investigation of a 4H-SiC metal-insulationsemiconductor structure with an A1203/SiO2 stacked dielectric 下载免费PDF全文
Atomic layer deposited (ALD) Al2O3/dry-oxidized ultrathin SiO2 films as a high-k gate dielectric grown on 8° off-axis 4H-SiC (0001) epitaxial wafers are investigated in this paper. The metal-insulation-semiconductor (MIS) capacitors, respectively with different gate dielectric stacks (Al2O3/SiO2, Al2O3, and SiO2) are fabricated and compared with each other. The I-V measurements show that the Al2O3/SiO2 stack has a high breakdown field (≥12 MV/cm) comparable to SiO2, and a relatively low gate leakage current of 1 × 10-7 A/cm2 at an electric field of 4 MV/cm comparable to Al2O3. The 1-MHz high frequency C-V measurements exhibit that the Al2O3/SiO2 stack has a smaller positive flat-band voltage shift and hysteresis voltage, indicating a less effective charge and slow-trap density near the interface. 相似文献
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