Kondo Resonance versus Fano Interference in Double Quantum Dots Coupled to a Two-Lead One-Ring System

We analyse the transport properties of a coupled double quantum dot （DQD） device with one of the dots （QD1） coupled to metallic leads and the other （QD2） embedded in an Aharonov-Bhom （A-B） ring by means of the slaveboson mean-field theory. It is found that in this system, the Kondo resonance and the Fano interference exist simultaneously, the enhancing Kondo effect and the increasing hopping of the QD2-Ring destroy the localized electron state in the QD2 for the QD1-leads, and accordingly, the Fano interference between the DQD-leads and the QD1-leads are suppressed. Under some conditions, the Fano interference can be quenched fully and the single Kondo resonance of the QD1-leads comes into being. Moreover, when the magnetic flux of the A-B ring is zero, the influence of the parity of the A-B ring on the transport properties is very weak, but this influence becomes more obvious with non-zero magnetic flux. Thus this model may be a candidate for future device applications.     

Quantum Phase Transition and Ferromagnetic Spin Correlation in Parallel Double Quantum Dots

We investigate electronic transport through a parallel double quantum dot （DQD） system with strong on-site Coulomb interaction, as well as the interdot tunnelling. By applying numerical renormalization group method, the ground state of the system and the transmission probability at zero temperature are obtained. For a system of quantum dots with degenerate energy levels and small interdot tunnel coupling, the spin correlations between the DQDs is ferromagnetic, and the ground state of the system is a spin-1 triplet state. The linear conductance will reach the unitary limit （2e^2/h） due to the Kondo effect at low temperature. As the interdot tunnel coupling increases, there is a quantum phase transition from ferromagnetic to anti-ferromagnetic spin correlation in DQDs and the linear conductance is strongly suppressed.     

Quantum Key Distribution Network Based on Differential Phase Shift

Using a series of quantum correlated photon pairs, we propose a theoretical scheme for any-to-any multi-user quantum key distribution network based on differential phase shift. The differential phase shift and the different detection time slots ensure the security of our scheme against eavesdropping. We discuss the security under the intercept-resend attack and the source replacement attack.     

球形量子点的三阶极化率

在理论上计算了球形量子点激子基态能级和偶极跃迁振子强度,分析了量子点激子的三阶极化率.结果表明:在激子强受限的情况下,量子点半径越小三阶极化率越大;在激子弱受限的情况下,量子点半径的增大,三阶极化率越大.     

稀土、2-羟基-3-萘甲酸、邻菲咯啉三元配合物合成及表征

在乙醇溶液中合成了稀土离子(RE=Tb,Eu,Sm,Nd)与2-羟基-3-萘甲酸(HL)、邻菲咯啉(phen)固体配合物。通过元素分析、红外光谱、紫外光谱、差热-热重分析,确定了配合物的组成为REL₄·phen₂·Na·H₂O。初步研究了这些配合物的谱学性质并推测出羧基(—COO—) 与稀土离子和钠离子属于桥式配位, 形成了链状结构的化合物。其中钠离子和稀土离子分别为六配位和八配位模式。     

Quantum Signatures of Chaos in Adiabatic Interaction Between a Trapped Ion and a Laser Standing Wave

We study quantum motion around a classical heteroclinic point of a single trapped ion interacting with a strong laser standing wave. We construct a set of exact coherent states of the quantum system and from the exact solutions reveal that quantum signatures of chaos can be induced by the adiabatic interaction between the trapped ion and the laser standing wave, where the quantum expectation values of position and momentum correspond to the classically chaotic orbit. The chaotic region on the phase space is illustrated. The energy crossing and quantum resonance in time evolution and the exponentially increased Heisenberg uncertainty are found. The results suggest a theoretical scheme for controlling the unstable regular and chaotic motions.     

Fabrication of high-quality submicron Nb/Al--AlOx/Nb tunnel junctions

Nb/Al-AlOx/Nb tunnel junctions are often used in the studies of macroscopic quantum phenomena and superconducting qubit applications of the Josephson devices. In this work, we describe a convenient and reliable process using electron beam lithography for the fabrication of high-quality, submicron-sized Nb/Al-AlOx/Nb Josephson junctions. The technique follows the well-known selective Nb etching process and produces high-quality junctions with Vm=100 mV at 2.3 K for the typical critical current density of 2.2 kA/cm^2, which can be adjusted by controlling the oxygen pressure and oxidation time during the formation of the tunnelling barrier. We present the results of the temperature dependence of the sub-gap current and in-plane magnetic-field dependence of the critical current, and compare them with the theoretical predictions.     

Low-Threshold Mid-Infrared Optical Parametric Oscillator Using Periodically Poled LiNbO33

We report the generation of tunable mid-infrared optical pulses using all-solid-state pumped optical parametri coscillator in a periodically poled lithium niobate. Several ways were used to lower the threshold, resulting in a mean threshold as low as 6.5mW and an achievement of wavelength conversion in the 2.77-4.04μm spectral range. Continuous tuning range from 2.97 to 3.25μm was achieved. The maximum idler output power of 466mW at the wavelength of 3.41μm was obtained, which represents an optical-to-optical conversion efficiency of 19% from incident pump power to the idler output.     

Preparation of Cu（In,Ga）Se2 Thin Film Solar Cells by Selenization of Metallic Precursors in an Ar Atmosphere

Cu（In, Ga）Se2 thin films are deposited on Mo-coated glass substrates by Se vapour selenization of sputtered metallic precursors in the atmosphere of Ar gas flow under a pressure of about 10 Pa. The in situ heat treatment of as-grown precursor leads to the formation of a better alloy. During selenization, the growth of CuInSe2 phase preferably proceeds through Se-poor phases as CuSe and InSe at relatively low substrate temperature of 250℃, due to the absence of In2Se3 at intermediate stage at low reactor pressure. Subsequently, the Cu（In,Ga）Se2 phase is produced by the reactive diffusion of CuInSe2 with a Se-poor GaSe phase at high temperature of up to 560℃. The final film exhibits smooth surface and large grain size. The absorber is used to fabricate a glass/Mo/Cu（In, Ga）Se2/CdS/ZnO cell with the total-area efficiency of about 7%. The low open-circuit voltage value of the cell fabricated should result from the nonuniform distribution of In and Ga in the absorber, due to the diffusion-controlled reaction during the phase formation. The films, as well as devices, are characterized.