一种受阻胺封端的聚芴蓝光材料的合成及其稳定性研究

以五甲基哌啶醇、对溴苯酰氯为原料合成了一种受阻胺抗氧稳定剂,通过Suzuki反应将其封端到聚(9,9-二辛基)芴上.通过核磁共振谱、凝胶渗透色谱对合成材料的分子结构进行了表征;并利用荧光发射光谱和退火方法,对其光谱热稳定性进行了细致研究.实验结果表明,当在聚芴分子链上引入受阻胺五甲基哌啶醇后,其荧光发射光谱的稳定性显著提高,绿光区发射现象明显减弱.     

可控偏振的量子点光发射

正瑞典研究人员已公布了一项计划,准备制造能发射线性偏振光的量子点。林雪平大学的Anders Lundskog及其同事通过在基部已加长的微型六角形氮化镓金字塔的顶部"种植"量子点,使氮化铟镓量子点所发射的光处于受控状态。他们发现,发射光的偏振方向与基部延长轴是一致的。通过调节氮化铟镓中的铟含量,原则上就可将由量子点发射的光从紫外线波长调到红外线波长。这种方法的好     

Electron field emission characteristics of nano-catkin carbon films deposited by electron cyclotron resonance microwave plasma chemical vapour deposition

This paper reported that the nano-catkin carbon films were prepared on Si substrates by means of electron cyclotron resonance microwave plasma chemical vapour deposition in a hydrogen and methane mixture. The surface morphology and the structure of the fabricated films were characterized by using scanning electron microscopes and Raman spectroscopy, respectively. The stable field emission properties with a low threshold field of 5V/μm corresponding to a current density of about 1μA/cm^2 and a current density of 3.2mA/cm^2 at an electric field of 10V/μm were obtained from the carbon film deposited at CH4 concentration of 8%. The mechanism that the threshold field decreased with the increase of the CH4 concentration and the high emission current appeared at the high CH4 concentration was explained by using the Fowler-Nordheim theory.     

超强激光超热电子激发的Kα X射线发射研究

建立了无色散型X射线谱仪. 利用SILEX-I激光装置的超强激光辐照固体物质，分别在靶前、后定量测量了Cu和Mo物质在不同激光功率密度时的X射线谱和Kα光子产额，推导了不同激光强度时的Kα X射线光子转换效率. 实验发现，打靶激光能量越高，靶后出射的Kα产额越高，100μm Mo靶可获得10^-5量级转换效率.     

Growth and characterization of InAs quantum dots with low-density and long emission wavelength

The growth parameters affecting the deposition of self-assembled InAs quantum dots （QDs） on GaAs substrate by low-pressure metal-organic chemical vapor deposition （MOCVD） are reported. The low-density InAs QDs （- 5 × 10^8cm^-2） are achieved using high growth temperature and low InAs coverage. Photoluminescence （PL） measurements show the good optical quality of low-density QDs. At room temperature, the ground state peak wavelength of PL spectrum and full-width at half-maximum （FWHM） are 1361 nm and 23 meV （35 nm）, respectively, which are obtained as the GaAs capping layer grown using triethylgallium （TEG） and tertiallybutylarsine （TBA）. The PL spectra exhibit three emission peaks at 1361, 1280, and 1204 nm, which correspond to the ground state, the first excited state, and the second excited state of the ODs, respectively.     

HLS储存环束流发射度研究

 研究了合肥光源(HLS)储存环束流发射度与其长直线节消色散条件之间的关系；在考虑到H函数的匹配时，计算了储存环最低束流发射度；为光源多种运行模式提供了理论依据。     

Generalized reduced-order synchronization of chaotic system based on fast slide mode

A new kind of generalized reduced-order synchronization of different chaotic systems is proposed in this paper. It is shown that dynamical evolution of third-order oscillator can be synchronized with the canonical projection of a fourth-order chaotic system generated through nonsingular states transformation from a cell neural net chaotic system. In this sense, it is said that generalized synchronization is achieved in reduced-order. The synchronization discussed here expands the scope of reduced-order synchronization studied in relevant literatures. In this way, we can achieve generalized reduced-order synchronization between many famous chaotic systems such as the second-order D\"{u}ffing system and the third-order Lorenz system by designing a fast slide mode controller. Simulation results are provided to verify the operation of the designed synchronization.     

突破间接带局限创新Si基激光器

Si基高效发光与受激光发射是Si基光子学突破性发展的关键课题,它的实现对Si基微电子学的发展有深远的重大意义．由于受到天然Si材料间接带能带结构的限制,Si材料的发光效率极低,更谈不上可实现受激光发射,人工改性就成为当代研究、开拓的主要途径．新的Si基直接带体材料(如β-FeSi2等)的探索,Ge／Si量子阱、超晶格、量子点的能带工程介观改性,子带发光跃迁的探索,异类元素插入短周期超晶格中的化学键改性,以及SiO2高浓度nc-Si的生成和高激活度稀土离子的掺入发光等已开展了多途径的研究,不同程度上取得了重要的进展,一种MIS结构电子隧道注入高效发光器件已在SiO2：RE MOS结构中实现．运用激光器件物理的深入设计和新的器件技术的引入,可以预计本世纪初叶,对实现Si基激光器的奢望将会成为现实,无疑它对Si基光子学、Si基集成光电子学乃至信息高科技的发展将作出历史性的巨大贡献．