Entangling Two Multi-atomic Clusters Through a Cavity Field

Two atomic clusters, which have NA and Ns two-level atoms, respectively, are placed in a cavity but separated spatially. There is no direct interaction between the atoms. All the atoms interact with a single-mode of the cavity field. Quantum entanglement between the two atomic clusters is investigated for various initial states of the two atomic clusters and the field. When the cavity field is initially in a Fock state, we find that the time evolution of entanglement quasi-periodically oscillates regardless of the initial states of atoms. The oscillation period increases as the initial photon number increases. When all the atoms in both of the atomic clusters are initially in the excited state, we show that there is no entanglement between the atomic clusters with NA = NB = 1 regardless the initial state of the cavity field. However, when either NA or NB is larger than one, we find that the entanglement always exists even for a strong thermal field. In cases with different initial states of the atomic clusters, we notice that the entanglement becomes stronger as number of the atoms increases. When all the atoms in both of the clusters in the ground state, we also find that the entanglement can be enhanced even by a thermal field. We also notice that a single qubit can be entangled with multi-atoms which are initially in the ground state by the cavity field initially being in vacuum, thermal, coherent, and squeezed states.     

分析非轴对称腔的复光线数值迭代法

将像散光束的复光线表示法用于分析非轴对称腔，并对有复杂像散的折迭腔作了数值迭代计算以说明方法的应用．     

静压下半导体微腔内激子与光子行为的研究

由于腔模与激子对压力的依赖关系不同,所以可以选择不同的压力使激子和光场处于不同的耦合状态,从而实现对耦合的调谐。利用这种办法,我们观测到了代表激子与光场强耦合作用的Rabi分裂。由于在我们现有样品结构中压力对激子本征行为的影响很小,与以前报道的温度、电场等调谐方式相比,这种调谐方法不仅可以有效地调谐半导体微腔内激子与腔模的耦合程度,而且能够保持激子的本征性质在整个调谐过程中基本不变。这有助于研究在强耦合过程中激子极化激元的本征性质。将实验结果与压力下激子与腔模耦合理论进行拟合,得出了正确的Rabi分裂值。     

Modified Photoluminescence by Silicon-Based One-Dimensional Photonic Crystal Microcavities

photoluminescence (PL) lrom one-dimensional photonic band structures is investigated. The doped photonic crystal with microcavitles are fabricated by using alternating hydrogenated amorphous silicon nitride (a-SiNx:H/a-SiNy:H) layers in a plasma enhanced chemical vapour deposition (PECVD) chamber. It is observed that microcavities strongly modify the PL spectra from active hydrogenated amorphous silicon nitride (a-SiNx:H) thin film. By comparison, the wide emission band width 208nm is strongly narrowed to 11 nm, and the resonant enhancement of the peak PL intensity is about two orders of magnitude with respect to the emission of the λ/2-thick layer of a-SiNx:H. A linewidth of Δλ=11 nm and a quality factor of Q=69 are achieved in our one-dimensional a-SiNz photonic crystal microcavities. Measurements of transmittance spectra of the as-grown samples show that the transmittance resonant peak of a cavity mode at 710nm is introduced into the band gap of one-dimensional photonic crystal distributed Bragg reflector (DBR), which further verifies the microcavity effects.     

量子微腔中腔场衰变对运动原子自发辐射的影响

通过分析环形微腔中单模量子电磁场与低速运动二能级原子相互作用过程中光子与原子质心的动量交换效应，本文详细研究了原子质心的运动多谱勒效应及光子反冲对原子能级自发辐射寿命的影响，本文理论证明了这效应起因子腔壁引起腔模的衰变，在一定条件下，原子质心运动将增强或低原子的自发辐射。     

偶数个多原子Greenberger-Horne-Zerlinger态的制备

提出了一种制备偶数个多原子Greenberger-Horne-Zerlinger态的方案,它是基于原子-腔场相互作用.首先n个分离的腔初始时处于真空态,通过双光子转移,把n个腔制备成数态|2>和真空态|o>的缠结态.随后,与腔场发生共振相互作用的2n个等同的原子被分别送入n个腔,通过相互作用后,2n个原子处于GHZ态,而n个腔仍然处于真空态.     

一种新型有机电致微腔结构的双模发射

采用结构Glass／DBR／ITO／NPB／NPB：Alq／Alq／Al制作了有机微腔电致发光器件。将空穴传输材料与发光材料以一定比例混合作为发光层，为了便于对比，在不改变有机层的膜厚的情况下同时制作了传统的异质结微腔器件，发现两种器件的发光光谱有很大不同，器件的复合效率与传统的异质结器件相比也得到了很大提高，这是因为将两种有机材料混合能消除界面势垒，提高器件的复合效率，从而提高了器件的发光性能，实现了微腔双模发射，且两个模式的半峰全宽分别为8nm和12nm。通过进一步优化器件结构可以实现微腔白光发射。     

氙灯泵浦新型晶体Nd∶S－VAP调Q激光器腔内倍频研究

采用氙灯泵浦晶体Ｎｄ∶Ｓ－ＶＡＰ，ＫＴＰ晶体腔内倍频，实现了Ｎｄ∶Ｓ－ＶＡＰ晶体０．５３２５μｍ绿光激光ＢＤＮ染料片调Ｑ运转。测量了输出绿光激光的特性及不同腔长和染料片小信号透过率情况下的输出能量及脉冲宽度，给出了染料片调Ｑ腔内倍频的耦合波方程组，数值求解方程组，所得的理论数据与实验结果很好地相符     

黑腔靶X光转换,输运的定量测量

为了测量黑腔靶X光引光效率、转换效率,我们设计了相应的分解靶(泄漏靶)实验,1989～1992年在″神光″装置上共进行了四次漏靶分解实验,利用灵敏度作了绝对标定的平响应X光二极管对漏靶注入孔、引光孔流出的X光角分布进行了测量,测出了x光角分布,得到了黑腔靶X光转换效率为50％～60％,引光效率约6％,为以后辐射驱动内爆研究的理论计算和靶的优化设计提供了重要的数据。     

腔长失调对光腔衰荡法测量精度的影响

 只考虑腔长失调因素下建立了反射率模拟测量的理论模型。根据高斯光束传输规律分析了腔长失调对衰荡腔模式耦合的影响，推导了腔长失调与谐振腔输出脉冲信号、衰荡信号与反射率之间的关系，模拟了腔长失调在±10mm范围内的光脉冲衰荡现象。结果表明：对于光敏面直径为0.2mm的高速探测器，为了保证10^-6的测量精度，腔长的失调量应控制在±1mm之间。在光路调节中采用具有对数变换功能的示波器和动态范围较大的探测器，可以提高测量精度。