Existence and Stability of Compact-Like Discrete Breather in Discrete One-Dimensional Monatomic Chains

Compact-like discrete breathers in discrete one-dimensional monatomic chains are investigated by discussing a generalized discrete one-dimensional monatomic model. It is proven that compact-like discrete breathers exist not only in soft Ф^4 potential but also in hard Ф^4 potential and K4 chains. The measurements of compact-like discrete breathers＇ core in soft and hard Ф^4 potential are determined by coupling parameter K4, while the measurements of compact-like discrete breathers＇ core in K4 chains are not related to coupling parameter K4. The stabilities of compact-like discrete breathers correlate closely to coupling parameter K4 and the boundary condition of lattice.     

GaN MOS-HEMT Using Ultra-Thin A1203 Dielectric Grown by Atomic Layer Deposition

We report a GaN metal-oxide-semiconductor high electron mobility transistor （MOS-HEMT） with atomic layer deposited （ALD） Al2O3 gate dielectric. Based on the previous work [Appl. Phys. Lett. 86 （2005） 063501] of Ye et al. by decreasing the thickness of the gate oxide to 3.5nm and optimizing the device fabrication process, the device with maximum transconductance of 150mS/mm is produced and discussed in comparison with the result of lOOmS/mm of Ye et al. The corresponding drain current density in the 0.8-μm-gate-length MOS-HEMT is 800mA/mm at the gate bias of 3.0 V. The gate leakage is two orders of magnitude lower than that of the conventional A1GaN/GaN HEMT. The excellent characteristics of this novel MOS-HEMT device structure with ALD Al2O3 gate dielectric are presented.     

Teleportation of an n-bit one-photon and vacuum entangled GHZ cavity-field state

A scheme for teleporting an arbitrary n-bit one-photon and vacuum entangled Greenberger-Horne-Zeilinger （GHZ） state is proposed. In this scheme, the maximum entanglement GHZ state is used as a quantum channel. We find a method of distinguishing four Bell states just by detecting the atomic states three times, which is irrelevant to the qubit number of the state to be teleported.     

Elastic Scattering of Ultracold ^133Cs and SSRb Atoms in Triplet State

Elastic scattering properties of the ultracold interaction for the triplet state of ^133Cs and ^85Rb atoms are studied using two kinds of potentials by the same phase Ф. One is the interpolation potential, and another is Lennard-Jones potential （LJl2,6 ）. The radial Schrodtinger equation is also solved using two computational methods, the semiclassical method （WKB）, and the Numerov method. Our results are found to be in an excellent agreement with the more recent theoretical values. It shows that the two potentials and methods are applicable for studying ultracold collisions between the mixing alkali atoms.     

Multiple ionization of argon accompanied by electron loss and capture of 0.22-6.35 MeV C^q＋ ions

In this paper a projectile ions recoil ions coincidence technique is employed to investigate the target ionization and projectile charge state changing processes in the collision of 0.22-6.35 MeV Cq^＋ （q = 1 - 4） ions with argon atoms. The partial cross section ratios of the double, triple, quadruplicate ionization to the single ionization （or the single capture） of argon associated with single electron loss （or single electron capture） by the projectile are measured and compared with the previous experimental results. In the present experiment, it is observed that the ratios of ionization cross sections R associated with single loss and single capture depend strongly on the projectile charge state and vary significantly with different reaction channels as impact energy increases. In addition, this paper gets empirical scaling laws for the ionization cross section ratios R corresponding to the projectile single loss and finds that the ratios of the double ionization to the single ionization associated with single electron capture remain constant in the present energy range.     

Electrical Characterization of Metal-Insulator-Metal Capacitors with Atomic-Layer-Deposited HfO2 Dielectrics for Radio Frequency Integrated Circuit Application

Metal-insulator-metal （MIM） capacitors with atomic-layer-deposited HfO2 dielectric and TaN electrodes are investigated for rf integrated circuit applications. For 12nm HfO2, the fabricated capacitor exhibits a high capacitance density of 15.5fF/μm2 at 100kHz, a small leakage current density of 6.4 × 10^-9 A/cm^2 at 1.8V and 125℃, a breakdown electric field of 2.6 MV//cm as well as voltage coefficients of capacitance （VCCs） of 2110ppm/V^2 and -824 ppm/V at 100kHz. Further, it is deduced that the conduction mechanism in the high field range is dominated by the Poole-Frenkel emission, and the conduction mechanism in the low field range is possibly related to trap-assisted tunnelling. Finally, comparison of various HfO2 MIM capacitors is present, suggesting that the present MIM capacitor is a promising candidate for future rf integrated circuit application.     

在WBEPM理论下EuⅠ原子里德堡能级计算(英文)

依据最弱受约束电子势模型理论,计算了铕原子4f76snd6D9/2(n≥13)、4f76snd8D9/2(n≥17)、4f76snd8D5/2(n≥15)和4f76snd8D3/2(n≥21)里德堡系列能级.计算结果与实验值的最大相对误差为4×10-5,最大绝对误差是1.91cm-1,达到了较高精度,这表明文中的外推数据是可信的.     

Kerr介质中光场与Ⅴ型三能级原子依赖强度耦合相互作用系统的光场压缩

利用全量子理论,研究了Kerr介质中单模光场与v型三能级原子依赖强度耦合的相互作用系统中光场的压缩效应.采用数值计算的方法讨论了Kerr介质与辐射场的耦合系数x和初始场平均光子数对光场压缩的影响.结果表明:Kerr效应对光场的压缩起着不同程度的减弱作用,适当大小的初始场平均光子数有利于光场的压缩.     

Au等离子体电子状态方程的理论研究

在改进的平均原子模型的基础上,在中心场近似下用分波法来处理部分自由电子密度分布函数,提高了电子波函数、电子占据数等原子参数的计算精度.通过平均近似处理,给出了劈裂的能带.通过使用分波法来准确计算贵金属Au的电子状态方程.     

基于振幅调制的超冷铯原子高分辨光缔合光谱的实验研究

基于振幅调制的超冷铯原子高分辨光谱的实验研究，用相对于铯分子6S_1/2+6P_3/2离解限红失谐的光缔合激光作用于磁光阱中超冷铯原子，观察到通过光缔合产生的激发态超冷分子.在实验中，为了得到高信号-噪声比的光缔合光谱，利用声光调制器对俘获光进行振幅调制，将探测到的超冷铯原子的荧光信号利用lock-in技术解调.同时利用密度矩阵方程系统地分析了实验结果.