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871.
We report a GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with atomic layer deposited (ALD) Al2O3 gate dielectric. Based on the previous work [Appl. Phys. Lett. 86 (2005) 063501] of Ye et al. by decreasing the thickness of the gate oxide to 3.5nm and optimizing the device fabrication process, the device with maximum transconductance of 150mS/mm is produced and discussed in comparison with the result of lOOmS/mm of Ye et al. The corresponding drain current density in the 0.8-μm-gate-length MOS-HEMT is 800mA/mm at the gate bias of 3.0 V. The gate leakage is two orders of magnitude lower than that of the conventional A1GaN/GaN HEMT. The excellent characteristics of this novel MOS-HEMT device structure with ALD Al2O3 gate dielectric are presented. 相似文献
872.
A scheme for teleporting an arbitrary n-bit one-photon and vacuum entangled Greenberger-Horne-Zeilinger (GHZ) state is proposed. In this scheme, the maximum entanglement GHZ state is used as a quantum channel. We find a method of distinguishing four Bell states just by detecting the atomic states three times, which is irrelevant to the qubit number of the state to be teleported. 相似文献
873.
SUN Jin-Feng HU Qiu-Bo ZHU Zun-Lue WANG Xiao-Fei ZHANG Ji-Cai 《理论物理通讯》2007,47(6):1121-1124
Elastic scattering properties of the ultracold interaction for the triplet state of ^133Cs and ^85Rb atoms are studied using two kinds of potentials by the same phase Ф. One is the interpolation potential, and another is Lennard-Jones potential (LJl2,6 ). The radial Schrodtinger equation is also solved using two computational methods, the semiclassical method (WKB), and the Numerov method. Our results are found to be in an excellent agreement with the more recent theoretical values. It shows that the two potentials and methods are applicable for studying ultracold collisions between the mixing alkali atoms. 相似文献
874.
Multiple ionization of argon accompanied by electron loss and capture of 0.22-6.35 MeV C^q+ ions
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In this paper a projectile ions recoil ions coincidence technique is employed to investigate the target ionization and projectile charge state changing processes in the collision of 0.22-6.35 MeV Cq^+ (q = 1 - 4) ions with argon atoms. The partial cross section ratios of the double, triple, quadruplicate ionization to the single ionization (or the single capture) of argon associated with single electron loss (or single electron capture) by the projectile are measured and compared with the previous experimental results. In the present experiment, it is observed that the ratios of ionization cross sections R associated with single loss and single capture depend strongly on the projectile charge state and vary significantly with different reaction channels as impact energy increases. In addition, this paper gets empirical scaling laws for the ionization cross section ratios R corresponding to the projectile single loss and finds that the ratios of the double ionization to the single ionization associated with single electron capture remain constant in the present energy range. 相似文献
875.
Electrical Characterization of Metal-Insulator-Metal Capacitors with Atomic-Layer-Deposited HfO2 Dielectrics for Radio Frequency Integrated Circuit Application
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Metal-insulator-metal (MIM) capacitors with atomic-layer-deposited HfO2 dielectric and TaN electrodes are investigated for rf integrated circuit applications. For 12nm HfO2, the fabricated capacitor exhibits a high capacitance density of 15.5fF/μm2 at 100kHz, a small leakage current density of 6.4 × 10^-9 A/cm^2 at 1.8V and 125℃, a breakdown electric field of 2.6 MV//cm as well as voltage coefficients of capacitance (VCCs) of 2110ppm/V^2 and -824 ppm/V at 100kHz. Further, it is deduced that the conduction mechanism in the high field range is dominated by the Poole-Frenkel emission, and the conduction mechanism in the low field range is possibly related to trap-assisted tunnelling. Finally, comparison of various HfO2 MIM capacitors is present, suggesting that the present MIM capacitor is a promising candidate for future rf integrated circuit application. 相似文献
876.
赵正 《国际物理教育通讯》2007,(2):21-24
目前人们对探究式学习与接受式学习在教学中的地位认识仍不清晰,在具体的实践教学中存在不少误区。本文试图运用白组织理论对探究式学习和接受式学习进行辨析,并得出这两种学习方式都是使学生学习知识的有效手段,而它们的区别在于接受式学习强调依靠外力来推动学生的学习,探究式学习则强调依靠学生系统内部的自组织演化机制来促进学生自主的学习。 相似文献
877.
依据最弱受约束电子势模型理论,计算了铕原子4f76snd6D9/2(n≥13)、4f76snd8D9/2(n≥17)、4f76snd8D5/2(n≥15)和4f76snd8D3/2(n≥21)里德堡系列能级.计算结果与实验值的最大相对误差为4×10-5,最大绝对误差是1.91cm-1,达到了较高精度,这表明文中的外推数据是可信的. 相似文献
878.
利用全量子理论,研究了Kerr介质中单模光场与v型三能级原子依赖强度耦合的相互作用系统中光场的压缩效应.采用数值计算的方法讨论了Kerr介质与辐射场的耦合系数x和初始场平均光子数对光场压缩的影响.结果表明:Kerr效应对光场的压缩起着不同程度的减弱作用,适当大小的初始场平均光子数有利于光场的压缩. 相似文献
879.
在改进的平均原子模型的基础上,在中心场近似下用分波法来处理部分自由电子密度分布函数,提高了电子波函数、电子占据数等原子参数的计算精度.通过平均近似处理,给出了劈裂的能带.通过使用分波法来准确计算贵金属Au的电子状态方程. 相似文献
880.