铁电薄膜可调带通滤波器

铁电薄膜的介电常数随外加电场强度的增加而减小.依据铁电薄膜的这一特性,提出了一种新颖的基于共面传输线结构的铁电薄膜可调带通滤波器.为了减小传输损耗,滤波器的导体部分由超导薄膜构成.滤波器的输入输出采用抽头线的方式分别与谐振器相接,外加电压通过输入输出端口直接施加到共面谐振器缝隙处的铁电薄膜上,用以改变铁电薄膜的介电常数,从而改变谐振器的谐振频率,实现带通滤波器通带频率的移动.这种新型可调带通滤波器具有结构紧凑、尺寸小及施加外加偏压容易等优点.仿真结果表明:铁电薄膜的介电常数在外加偏压下从250减小到150时,带通滤波器的传输特性曲线的形状基本保持不变,通带的中心频率从10.283GHz增加到10.518GHz,其3dB带宽保持在0.150GHz左右,反射损耗始终小于-17dB.     

Al3+掺杂的CuZn铁氧体的结构，电学和磁学特性

采用固相合成反应技术制备纳米Cu_0.5Zn_0.5Fe_2-xAl_xO₂(x=0.0,0.1,0.2,0.3,0.4和0.5)铁氧体材料,研究Al³⁺含量对结构,电学和磁学性质的影响. 采用X射线衍射研究单相立方尖晶石结构. 利用Scherrer公式估算晶粒尺寸. 测定了温度依赖的直流电阻率.结果表明随Al³⁺含量的增加,晶格常数减小,孔隙度增加,饱和磁化强度值降低,Al³⁺对铁氧体的介电常数、介电损耗角的正切值和介质损耗因子等介电性能有明显影响,这可能与空间电荷极化有关.     

负介电常数材料和负磁导率材料的双层结构中电磁波模式分析

研究了双层单负材料结构中电磁波的模式,主要分析了不同模式的产生条件,讨论了这些模式与材料参数之间的关系.当材料参数满足平均介电常数和磁导率为零时出现隧穿模式.当满足波导模产生条件时,波导模式的电磁波在材料两边的半无限真空中以消逝波存在,在双层单负材料的界面处也可以出现较强的局域场.     

Imaging with a metamaterial ＂Im-Perfect＂ lens

There is widespread and strong interest in trying to fabricate a metamaterial in which both the permittivity and permeability are equal to - 1 in order to achieve sub-wavelength imaging. Several metamaterial constructs have been proposed with varying degrees of suceess because of inherent losses, limited bandwidth and scattering from the abstracted circuit elements constituting the artificial material itself. A further limitation is the need to capture evanescent components from the object to be imaged that requires the lens to be located near the object. We have studied the underlying models and constraints that influence the design of a negative index lens and present this analysis as well as reviewing the opportunities. There are inevitable and well-known trade-offs between lens thickness, wavelength, dispersion and absorption. However, these can be eharaeterized both numerically and experimentally, suggesting that a computational imaging approach to the recovery of sub-wavelength features might be effective. Depending on the specific details of the metamaterial employed for imaging, one can consider the data acquired to represent a set of coded apertures.     

Preparation of Ultra Low- k Porous SiOCH Films from Ring-Type Siloxane with Unsaturated Hydrocarbon Side Chains by Spin-On Deposition

An ultra-low-dielectric-constant （ultra low-k, or ULK） porous SiOCH film is prepared using a single ring-type siloxane precursor of the 2,4,6,8-tetravinyl-2,4,6,8-tetramethylcyclotetrasiloxane by means of spin-on deposition, followed by crosslinking reactions between the precursor monomers under UV irradiation. The as-prepared film has an ultra low k of 2.41 at 1 MHz due to incorporation of pores and hydrocarbon crosslinkages, a leakage current density of 9.86×10-7 A/cm2 at 1 MV/cm, as well as a breakdown field strength of ~1.5 MV/cm. Further, annealing at 300°C results in lower k （i.e., 1.94 at 1 MHz）, smaller leakage current density （2.96×10-7 A/cm2 at 1 MV/cm） and higher breakdown field strength （about 3.5 MV/cm）, which are likely caused by the short-ranged structural rearrangement and reduction of defects in the film. Finally, the mechanical properties and surface morphology of films are also evaluated after different temperature annealing.     

基于Ga2O3-SiC-Ag多层结构的介电常数近零超低开关阈值光学双稳态器件

光学双稳态这一非线性光学现象因其在全光系统中的巨大应用潜力而备受关注.然而微弱的非线性响应往往需要巨大的输入功率才能实现光学双稳态,导致其实用性不强.本文基于Ga₂O₃-SiC-Ag的金属-介电材料多层结构,在实现介电常数近零的大场增强的同时,还引入了具有大非线性系数的材料,并基于有限元法研究了介电常数近零层的厚度和长度对光学双稳态的影响.研究结果表明,光学双稳态随介电常数近零层的厚度和长度的增大而变得愈发显著,在通信波段的开关阈值低至约10^–6 W/cm²,与之前报道的基于介电常数近零材料的光学双稳态相比,降低了9个数量级,展现了在光子集成电路产业化中的巨大应用潜力.     

基于Rytov积分近似的有限口径定量反演成像（特邀）

提出一种适用于有限口径下高相对介电常数和大尺寸目标物体的反演方法。首先分析了低损耗介质的复折射率，通过有效折射率的计算方法得到有效折射率与介电常数关系；利用高频近似估计对比度函数，通过近似估计散射体内部散射场及其梯度对传统Rytov近似进行数学上的修正，产生无相位条件下Rytov积分近似模型，该模型可以实现定量重建高相对介电常数和大尺寸未知目标的对比度虚部。仿真结果显示有限口径下的Rytov积分近似可以对高介电常数和大尺寸目标的对比度虚部提供精确的形状重建。