Dynamical study on charge injection and transport in a metal/polythiophene/metal structure

The dynamical process of charge injection from metal electrode to a nondegenerate polymer in a metal/polythiophene （PT）/metal structure has been investigated by using a nonadiabatic dynamic approach. It is found that the injected charges form wave packets due to the strong electron-lattice interaction in PT. We demonstrate that the dynamical formation of the wave packet sensitively depends on the strength of applied voltage, the electric field, and the contact between PT and electrode. At a strength of the electric field more than 3.0 × 10^4 V/cm, the carriers can be ejected from the PT into the right electrode. At an electric field more than 3.0 × 10^5 V/cm, the wave packet cannot form while it moves rapidly to the right PT/metal interface. It is shown that the ejected quantity of charge is noninteger.     

Effect of heat treatment on electronic phase in underdoped La2-xSrxCuO4 single crystal

Superconducting La1.937Sr0.063CuO4 crystals grown by the travelling-solvent floating-zone technique were thermally treated under various temperatures and oxygen pressures for moderately adjusting the oxygen content. The response of intrinsic electronic property of the crystals to the change of hole density in La2-xSrxCuO4 in the vicinity of the magic doping of x= 1/16 （= 0.0625） is studied in detail by magnetic measurements under various fields up to 1 T. It is found that when the superconducting critical temperature （Tc） increases with the oxygen content, there appears also a new subtle electronic state that can be detected from the differential curves of diamagnetic susceptibility dx/dT of the crystal sample. In contrast with the intrinsic state, the new subtle electronic state is very fragile under the magnetic fields. Our results indicate that a moderate change in oxygen doping does not significantly modify the intrinsic electronic state originally existing at the magic doping level.     

The effects of interstitial oxygen on superconducting electronic phases in strontium and oxygen co-doped La1.937Sr0.063CuO4＋δ

Strontium and oxygen co-doped La1.937Sr0.063CuO4＋δ superconductor with Tc≈ 40K, which is obtained by oxidizing strontium-doped starting ceramic sample La1.937Sr0.063CuO4 in NaC10 solution, is annealed under different conditions to allow interstitial oxygen to redistribute. The evolution of the intrinsic superconducting property with the oxygen redistribution is studied in detail by magnetic measurements in various fields. It is found that there occurs the electronic phase separation from the single superconducting phase with Tc ≈ 40 K into two coexisting superconducting states with values of Tc： 15 and 40K or of 15 and 35 K in this system, depending on annealing condition. Our results indicate that the 15, 35 and 40 K superconducting phases associated with the excess oxygen redistribution are all thermodynamically meta-stable intrinsic states in this Sr/O co-doped cuprate.     

SrS∶Eu,Sm光存储机理的研究

采用高温固相反应法在还原气氛下制备了SrS:Eu,Sm样品,利用荧光光谱仪测量了这种光存储材料的激发光谱和发射光谱.将样品用紫外灯(265 nm)照射激发饱和后,再用980 nm的红外激光器激励,利用荧光光谱仪测试得到了峰值位于599 nm的光激励发光光谱.此外还利用热释光谱仪测试了样品的热释光谱.探讨了SrS:Eu,Sm的光存储机理,认为引入的稀土离子在SrS的带隙中形成分裂能级.当用紫外光照射材料时,Eu的电子从基态被激发到激发态或基质材料的导带,其中一部分电子被辅助激活剂Sm的陷阱俘获,实现信息写入.当材料被与陷阱深度相当的红外光激励时,电子陷阱Sm2 俘获的电子才可能跃出俘获能级,与空穴在Eu的激发态和基态能级上复合,多余的能量以可见光的形式释放出来,实现信息读出.     

Performance of gain-switched all-solid-state quasi-continuous-wave tunable Ti:sapphire laser system

We have made a gain-switched all-solid-state quasi-continuous-wave （QCW） tunable Ti：sapphire laser system, which is pumped by a 532 nm intracavity frequency-doubled Nd：YAG laser. Based on the theory of gain-switching and the study on the influencing factors of the output pulse width, an effective method for obtaining high power and narrow pulse width output is proposed. Through deliberately designing the pump source and the resonator of the Ti：sapphire laser, when the repetition rate is 6 kHz and the length of the cavity is 220 mm, at an incident pump power of 22 W, the tunable Ti：sapphire laser from 700 to 950nm can be achieved. It has a maximum average output power of 5.6W at 800nm and the pulse width of 13.2 ns, giving an optical conversion efficiency of 25.5% from the 532 mn pump laser to the Ti：sapphire laser.     

LD端面抽运Nd:YAG 1319nm/1338nm双波长激光器研究

从LD端面抽运固体激光器的激光阈值公式出发，建立了双波长激光同时振荡的阈值条件，理论计算了腔镜对于两个波长的透过率关系，实现了LD端面抽运Nd:YAG 1319nm/1338nm双波长激光连续和准连续输出.双波长激光连续输出功率可达6W，斜效率为30%；准连续输出功率在重复频率50kHz时可达4.75W，斜效率为24.73%，脉冲宽度为55.05ns；腔内插入布儒斯特片，在重复频率为50kHz时，双波长激光准连续线偏振输出功率可达2.22W，不稳定性小于0.52%，M²     

杂质P对α-Fe中刃型位错上扭折电子结构的影响

利用离散变分方法和DMol方法，研究了P对bcc Fe中［100］(010)刃型位错上扭折电子结构的影响，计算了杂质偏聚能、原子间相互作用能、电荷密度及态密度.计算结果表明：微量P引入体系后，电荷发生了重新分布，P原子得到电子，其周围Fe原子失去电子，由于P原子的3p轨道与近邻Fe原子的3d4s4p轨道之间杂化，使P原子与近邻Fe原子间有较强的相互作用，不利于扭折的迁移，使位错运动受阻，有利于材料强度的提高.同时，杂质P原子与基体原子间的成键主要是d，p轨道起作用，使得它们之间的成键有较强的方向性，有可能     

Mg-Zr合金微观组织电子结构研究

用递归法计算了α-Mg与α-Zr的结构能、原子结合能，Mg/Zr界面能与Mg的表面能，Mg中Zr及Zr中Fe，Mn，Si，H等杂质原子相互作用能，Mg，Zr原子态密度及其在合金中的电荷变化. 计算发现，在晶体中与Mg态密度差别很大的Zr在Mg/Zr界面却与Mg趋于相近，从而界面电子环境与Mg相似，为Mg形核生长提供有利条件；α-Zr的结构能、原子结合能低于相应的α-Mg，且Mg/Zr界面能低于Mg的表面能，从能量角度合理解释了Zr先于Mg从Mg熔体析出，并作为异质核心细化Mg晶粒的实验现象. 原子相互作用     

Cd掺杂纤锌矿ZnO电子结构的第一性原理研究

采用密度泛函理论结合投影缀加波方法，对掺杂Cd导致ZnO禁带宽度下降的机理进行了研究. 通过对掺杂前后电子能带结构，态密度以及分态密度的计算和比较，发现Cd_xZn_1-xO价带顶端(VBM)始终由O-2p占据；而导带顶端(CBM)则由Cd-5s与Zn-4s杂化轨道控制. 随着掺杂浓度的增加，决定带隙宽度的CBM的位置下降，同时VBM的位置上升，从而导致了带隙的变窄，出现了红移现象. 此外，Cd掺杂会使晶胞发生膨胀，这种张应变也是导致Cd     

LD泵浦Nd：YAG激光器纵模特性及频率稳定性实验研究

摘要为了更好地研究LD泵浦Nd：YAG激光器的输出光束质量，利用共焦球面干涉仪设计了一套用于测量和分析该激光器纵模特性的简易装置，对该激光器的纵模进行了实验分析。在室温下测得纵模间隔为1.83GHz，纵模谱线宽度为113.83MHz。同时利用此装置，对该激光器的频率稳定性进行了分析，在120s取样时间内，测得频率稳定度为2.94×10^-4。