Multiple—Scattering of Near—Edge x—ray Absorption Fine Structure of Sulphur—Passivated InP（100） Surface

We use the multiple-scattering cluster method to calculated the sulphur 1s near-edge x-ray absorption fine structure (NEXAFS) of S-passivated InP(100) surface.The physical origins of the resonances in the NEXAFS have been unveiled.It is shown that the most important resonance is attributed to the photoelectron scattering between the central sulphur and the nearest indium atoms.The studies show that two S-S dimers with the bond lengths of 2.05A and 3.05A coexist in the surface,meanwhile the bridge and antibridge site adsorption of single S could not be ruled out.We support the scanning tunnelling microscopy result that the S-passivated InP(100) surface exhibits significant discorder.     

4英寸热氧化硅衬底上磁性隧道结的微制备

就如何在4英寸热氧化硅衬底上沉积高质量的磁性隧道结纳米多层薄膜材料和如何利用光刻方法微加工制备均匀性较好的磁性隧道结方面做了初步研究，并对磁性隧 道结的磁电性质及其工作特性进行了初步测量和讨论.利用现有的光刻设备和工艺条 件在4英寸热氧化硅衬底上直接制备出的磁性隧道结，其结电阻与面积的积 矢的绝对误差在10% 以内，隧穿磁电阻的绝对误差在7% 以内，样品的磁性隧道结性质具有较好的均匀性和一致性，可以满足研制磁随机存储器存储单元演示器件的基本要求. 关键词： 磁性隧道结 隧穿磁电阻 磁随机存储器 4英寸热氧化硅衬底     

稀磁半导体Zn1-xMnxTe吸收光谱压力红移的理论研究

以自由Mn²⁺离子的径向波函数为基础,通过引入电子云延伸效应系数κ来修正这一径向波函数,得到了稀磁半导体Zn_1-xMn_xTe晶体中Mn²⁺离子的径向波函数.以此波函数为基础,研究了Zn1-xMnxTe晶体吸收光谱的高压谱移特性,并且得到了吸收谱中四条谱线随压力的红移规律.     

深能级杂质对光导半导体开关非线性特性的影响

建立了非线性GaAs光导开关深能级杂质瞬态模型的基本方程,获得了与实验现象定性吻合的电流输出,给出了平均载流子随时间演化的情况.分析结果表明,在考虑了深能级杂质的俘获、发射和碰撞电离后,有可能对非线性光导开关中发生的一系列现象做出解释,进一步的仔细分析将对非线性光导开关的设计和制作提供理论指导.     

Schottky Barrier Height Inhomogeneity of Ti／n—GaAs Contact Studied by the I—V—T Technique

The current-voltage characteristics of Ti/n-GaAs Schottky diodes measured over a temperature range of 78-299K have been interpreted on the basis of thermionic emission across an inhomogeneous Schottky contact.The experiment shows that the apparent barrier height (φap) increases from 0.437eV at 78K to 0.698eV at room temperature.the plot of φap versus 1/T does not exhibit a simple linear relationship over the whole temperature range,indicating that the barrier height distribution is more complicated than the frequently observed single Gaussian distribution.A new multi-Gaussian distribution model is developed.Our experimental results can be explained by a double Gaussian distribution of the barrier heights.The weight,the mean barrier height,and the standard deviation of the two Gaussian functions are 0.00001 and 0.99999,0.721 and 0.696,0.069 and 0.012eV,respectively.     

Photoluminescence Characterization of Silicon Nanoparticles Hybridized Europium Complex

A europium complex Eu (DBM)3 TPPO (Eu tris(benzoylmethide)-(triphenylphosphine oxide)) and silicon nanoparticles have been hybridized.The hybridization can evidently change the photoluminescence (PL) characteristics of the Eu complex in the following aspects:under an excitation of 390nm,the intensity of the PL peak at 611nm due to the ^5Du-^7F2 transition of the Eu^3 ions has been increased by 30%,and thc integrated PL intensity in the visible range has been increased by nearly 3 times;the PL excitation efficiency beyond 440nm has been improved cvidently;the peak in the PL excitation spectrum shifts from 408nm to 388nm,and the PL decay time decreases from 2.07 to 0.96μs,The experimental results indicatde that in the PL process,the photoexcited energy may transfer from the silicon nanoparticlcs to the Eu^3 ions.     

光放大器前置可调光学滤波器

介绍Ｆ－Ｐ干涉滤波器实现中心波长可调的两种机理，给出通过改变腔距来改变中心波工的滤波器的典型结构，并且给出了相应的电压驱动电路，实验表明选择合适的光放大器前置滤波器可以提高系统的灵敏度。     

GaAs/AlAs超晶格的近共振喇曼散射研究

本文介绍GaAs/AlAs超晶格的室温近共振喇曼散射测量结果。由于超晶格中Fr?hlich相互作用的共振增强效应,GaAs LO声子偶模的散射得到了很大的增强。和前人的结果一样,在偏振谱我们观察到了偶模。但和前人的结果不同,在退偏振谱中我们观察到的是奇模,而不是偶模。从而证明了在近共振条件下LO声子限制模仍遵从与非共振时一样的选择定则。二级喇曼散射实验结果表明,在偏振谱中二级谱是由两个偶模组合而成,而在退偏振谱中的二级谱与前人的结果不同,由一个奇模与一个偶模组合而成。上述结果与最近提出的黄朱模型的预言是一 关键词：     

离子注入合成β-FeSi2薄膜的显微结构

采用MEVVA源(Metal Vapor Vacuum Arc Ion Source)离子注入合成β-FeSi2薄膜,用常规透射电镜和高分辨电镜研究了不同制备参数下β-FeSi2薄膜的显微结构变化. 研究结果表明:调整注入能量和剂量,可以得到厚度不同的β-FeSi2表面层和埋入层. 制备过程中生成的α,β,γ和CsCl型FeSi2相的相变顺序为γ-FeSi2→β-FeSi2→α-FeSi2,CsCl-FeSi2→β-FeSi2→α-FeSi2或β-FeSi2→α-FeSi2. 当注入参数增加到60kV,4×1017ions/cm2,就会导致非晶的形成,非晶在退火后会晶化为β-FeSi2相,相变顺序就变为非晶→β-FeSi2→α-FeSi2. 随退火温度逐渐升高硅化物颗粒逐渐长大,并向基体内部生长,在一定的退火温度下硅化物层会收缩断裂为一个个小岛状,使得硅化物/硅界面平整度下降. 另外,对于β-FeSi2/Si界面取向关系的研究表明,在Si基体上难以形成高质量β-FeSi2薄膜的原因在于多种非共格取向关系的并存、孪晶的形成以及由此导致的界面缺陷的形成.     

同步辐射光电子能谱表征MgO在GaAs（100）上淀积过程中的氧物种

用同步辐射光电子能谱表征了不同氧分压下通过热蒸发镁在ＧａＡｓ（１００）面制备氧经物超薄膜过程中的氧物种，结果表明表面氧物种的形式与镁氧配比有关，较高的氧分压下于形成活泼的分子离子等氧中间体，因此通过控制镁氧比可以制备高效的薄膜模型催化剂或适合于功能材料集成的规则氧化物过渡层，氧物种的形式可以通过能谱中不同的原子或分子轨道电子跃迁来有效地区分。