2+1维SU(2)格点规范场胶球质量的七阶RPA近似

采用无规相近似(RPA)方法,用空心图作为试探波函数,利用Feymann?Hellman定理计算七阶2?+?1维SU(2?)格点规范场的胶球质量,在弱耦合区1/g2?=1.0?–?1.8胶球质量表现出良好的标度行为,基本趋于常数(m/e2?≈1.2?0±0?.0?1)?.     

Low-Temperature Growth of Polycrystalline silicon Films by SiCl4／H2 rf Plasma Enhanced Chemical Vapour Deposition

Polycrystalline silicon film was directly fabricated at 200℃ by the conventional plasma enhanced chemical vapour deposition method from SiCl4 with H2 dilution. The crystallization depends strongly on the deposition power.The maximum crystMlinity and the crystalline grain size are over 80% and 200—50Onm, respectively. The results of energy dispersive spectroscopy and infrared spectroscopy measurements demonstrate that the film is mostly composed of silicon, without impurities such as Cl, N, C and bonded H. It is suggested that the crystallization at such a low temperature originates from the effects of chlorine, i.e., in-situ chemical, etching, in-situ chemical cleaning, and the detachment of bonded H.     

光辅助超高真空CVD系统制备SiGe异质结双极晶体管研究

介绍了采用紫外光化学汽相淀积(UVCVD)、超高真空化学汽相淀积(UHVCVD)和超低压化学汽相淀积(ULPCVD)技术研制的化学汽相淀积(CVD)工艺系统,简称U³CVD系统.应用该系统,在450℃低温和10^-7Pa超高真空环境下研制出了硅锗(SiGe)材料和硅锗异质结双极晶体管(SiGe HBT)材料.实验表明,该系统制备的SiGe HBT材料性能良好.     

利用富铈混合稀土改善工业纯铝中富铁相形貌的研究

利用金相分析方法研究了富Ce混合稀土变质对含不同Fe量的工业纯铝的组织和其中富铁相形貌的影响。试验结果表明,随着Fe含量的增加,富铁相由弥散细小的颗粒状向短棒状、长针状转变;富Ce混合稀土变质使铝中的富铁相由长针状变为弥散细小的颗粒状。随着稀土含量的增加,-αAl晶粒逐渐细化,富铁相尺寸及数量逐渐减小。添加0.5%稀土时,-αAl晶粒细化效果最佳,而且富铁相呈细小颗粒状均匀分布在-αAl基体的晶界处。本文还对稀土改善富铁相的机制进行了分析。     

Effect of Incident Intensity on Films Growth in Pulsed Laser Deposition

Incident intensity, defined by the amount of particles deposited per pulse, is an important parameter in the film growth process of pulsed laser deposition （PLD）. Different from previous models, we investigate the irreversible and reversible growth processes by using a kinetic Monte Carlo method and find that island density and film morphology strongly depend on pulse intensity. At higher pulse intensities, lots of adatoms instantaneously diffuse on the substrate surface, and then nucleation easily occurs between the moving adatoms resulting in more smaller-size islands. In contrast, at the lower pulse intensities, nucleation event occurs preferentially between the single adatom and existing islands rather than forming new islands, and therefore the average island size becomes larger in this case. Additionally, our results show that substrate temperature plays an important role in film growth. In particular, it can determine the films shape and weaken the effect of pulse intensity on film growth at the lower temperatures by controlling the mobility rate of atoms. Our results can match the related theoretical and experimental results.     

消费者化学--一门受大学生欢迎的跨系选修课

近年来,大学生的文化素质教育受到高度重视,应运而生的跨系选修课层出不穷,如音乐、美术欣赏,文学作品选读等均受到欢迎.理科中除计算机属热门外,其他选修课均受到不同程度的冷落,特别是对文科学生,问津者更是寥寥无几.     

相空间中相互垂直的相干态迭加态以及相应的双模纠缠态研究

相干态是最接近经典态的量子态，而广泛研究的相干迭加态——如奇偶相干态、Schleich的镜像迭加相干态等——则显示更多非经典效应。另外，双模及多模迭加态，特别是所谓的纠缠态，在量子信息处理如量子隐形传态和量子密码术中扮演重要角色。我们就相空间中相互垂直的相干态的迭加态进行讨论，研究其非经典特性，如光子数统计分布、正交分量压缩效应、Wigner分布函数的负性以及由此引入的非经典判别子。结果表明，这一类相干迭加态在满足某种条件下具有亚泊松光子统计分布和正交分量的压缩效应，并且参数变量在一定范围内这两种非经典效应同时存在；这些迭加态的Wigner分布中存在不同程度的负值区域．并与奇偶相干态做出了比较．计算相廊的Wigner函数积分判别子可以定最地分析其负性的深度。     

全气相化学激光体系的直流放电研究

 为了提高化学激光体系(AGIL)中F原子的产率，采用直流放电引发方式，对棒式电极的放电特性进行了研究。在对NF3/He混合气体进行解离时，通过选择不同平衡电阻，得到了3 kW左右的放电注入功率。用光谱分析仪对F原子产率进行了测量。通过拟合计算可得：一个NF3分子能够解离出1.3～1.5个F原子。