基于新型电荷生成层的P-i-N结构白色有机叠层电致发光器件

采用2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline(BCP): 5 wt.% cesium carbonate(Cs₂CO₃)和N, N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)-benzidine(NPB): 20 wt.% molybdenum oxide(MoO₃)分别作为器件的电子注入层和空穴注入层,研究了N型和P-i-N结构有机电致发光器件的载流子传输特性.载流子传输层中BCP: Cs₂CO₃和NPB:MoO₃的引入有效增强了载流子注入能力,从而降低了器件的驱动电压.基于新型电荷生成层BCP: 5 wt.% Cs₂CO₃/ NPB: 20 wt.% MoO₃制备了色稳定、高效率P-i-N结构有机叠层器件.与单元器件相比,引入新电荷生成层有机叠层器件的最大电流效率增大了2.5倍,表明该电荷生成层可以有效地将电子和空穴分别注入到相邻发光单元中.采用该电荷生成层制备了P-i-N结构白色有机叠层器件,器件的上下发光单元分别为橙光和蓝光发射.当发光亮度从500增加到5 000 cd/m²时,器件的色坐标稳定在(0.33, 0.29)附近,接近白光等能点.利用单色发光单元堆叠制备白色有机叠层器件的方法为实现色稳定、高效率的白色有机电致发光器件提供了一种有效的途径.     

Method to accurate calibrate deposition rates of EUV multilayer coatings

Random thickness error is an important factor which effects the calibration accuracies of deposition rates for extreme ultraviolet （EUV） multilayer coatings fabricated by sputter deposition techniques. A least square fitting method is proposed to determine deposition rates and extract random thickness errors accurately. The validity of this method is shown by evaluating two deposition systems with control abilities of -0.1 nm and better than 0.01 nm respectively.     

Multilayers with high-reflectivity at 19.5 nm and low-reflectivity at 30.4 nm

The multilayer （ML） mirror with high-reflectivity （HR） at a specific emission line of 19.5 nm （Fe line） and low-reflectivity （LR） at 30.4 nm （He line） is needed to be designed and fabricated for observing the image of sun. Based on a variety of optimizations utilized different structures, the design is performed and the final results demonstrate that the reflectivity at 30.4 nm does not achieve minimum value when the reflectivity at 19.5 nm reaches the maximum value. The tradeoff should be done between the HR at 19.5 nm and LR at 30.4 nm. One optimized mirror is fabricated by direct current magnetron sputtering and characterized by grazing-incident X-ray diffraction （XRD） and synchrotron radiation （SR）. The experimental results demonstrate that the ML achieves the reflectivity of 33.3% at 19.5 nm and of 9.6× 10-4 at 30.4 nm at the incident angle of 13°.     

两种带电尘埃颗粒的等离子体鞘层玻姆判据

采用流体方程和尘埃充电自洽模型研究了鞘边含有两种尘埃颗粒的等离子体玻姆判据. 通过拟牛顿法数值模拟了鞘边两种尘埃颗粒的存在对尘埃自身充电以及离子马赫数的影响. 两种尘埃颗粒中含量较少的尘埃颗粒数密度的增加, 导致两种尘埃颗粒表面悬浮势一个降低, 一个升高. 含量较少的尘埃颗粒的数密度越多和半径越小, 都会导致离子马赫数增大. 另外鞘边无论何种尘埃颗粒的速度增加, 鞘边离子马赫数都将减小. 关键词： 等离子体鞘层 尘埃颗粒 玻姆判据     

Efficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer inserted in the GaN barriers

The advantages of a blue InGaN-based light-emitting diode with a p-InGaN layer inserted in the GaN barriers is studied. The carrier concentration in the quantum well, radiative recombination rate in the active region, output power, and internal quantum efficiency are investigated. The simulation results show that the InGaN-based light-emitting diode with a p-InGaN layer inserted in the barriers has better performance over its conventional counterpart and the light emitting diode with p-GaN inserted in the barriers. The improvement is due to enhanced Mg acceptor activation and enhanced hole injection into the quantum wells.     

含孔隙分层半空间中瑞利波的传播特性研究

为了研究含孔隙介质分层半空间中瑞利波的传播规律,分析孔隙介质参数对瑞利波频散曲线的影响,本文进行了数值模拟研究。采用传递矩阵算法,计算了含孔隙分层半空间中一定频率范围内瑞利波所有模式的频散及激发强度曲线,并与均匀弹性固体分层半空间情况作了类比分析,在含孔隙覆盖层的两层模型和含低速孔隙夹层的三层模型下,详细研究了孔隙度、渗透率、层厚度等参数对瑞利波各模式的影响,发现孔隙度及层厚度的变化对频散曲线影响较大,而渗透率的变化对频散曲线影响较小。     

Charge state effect on the K-shell ionization of iron by xenon ions near the Bohr velocity

Fe K-shell ionization cross sections induced by 2.4–6.0 MeV Xe20+are measured and compared with different binaryencounter-approximation(BEA)models.The results indicate that the BEA model corrected both by the Coulomb repulsion and by the effective nuclear charge(Zeff)agrees well with the experimental data.Comparison of Fe K-shell X-ray emission induced by 5 MeV xenon ions with different initial charge states(20+,22+,26+,30+)verifies the applicability of the effective nuclear charge(Zeff)correction for the BEA model.It is found that Zeffcorrection is reasonable to describe direct ionization induced by xenon ions with no initial M-shell vacancies.However,when the M shell is opened,the Zeffcorrected BEA model is unable to explain the inner-shell ionization,and the electron transfer by molecular-orbital promotion should be considered.     

沟道层厚度对室温制备的In2O3薄膜晶体管器件性能的影响

在室温下采用直流磁控溅射以SiO₂/Si为衬底制备了不同沟道层厚度的底栅式In₂O₃薄膜晶体管,讨论了沟道层厚度对底栅In₂O₃薄膜晶体管的电学性能的影响。实验结果表明:器件的特性与沟道层厚度有关,最优沟道层厚度的In₂O₃薄膜晶体管为增强型,其阈值电压为2.5 V,开关电流比约为10⁶,场效应迁移率为6.2 cm²·V^-1·s^-1。     

直流大气压电晕放电电子密度的光谱研究

利用自制针—板式放电装置,在大气中进行电晕放电实验。用发光区域照片光斑的大小,讨论了电晕层厚度与电源电压的关系。在相同针板间距下,电晕层厚度随着电压的升高而增大;在相同电压下,电晕层厚度随着针板间距的增大而减小。由于高能电子密度能够通过氮分子第二正带系337.1 nm的光谱强度大小反映,因此对氮分子第二正带系337.1 nm谱线的强度用发射光谱法进行了测量。实验结果发现在针尖附近高能电子密度最大,并且高能电子密度随电压的升高而增大;电压一定时,高能电子密度随针板间距的增大而减小。在针板间距和电源电压不变的情况下,高能电子密度随针尖曲率半径的减小而增大。     

无限层铜氧化合物高温超导体研究进展

无限层结构ＡＣｕＯ２（Ａ：碱土金属）化合物是所有铜氧化物高温超导体中结构最简单,而且可能是临界超导转变温度Ｔｃ最高的化合物。它具有一些独特的物理性质。综述了无限层结构化合物的合成、结构及超导电性,并对目前存在的问题及今后研究的方向作了讨论。