Growth and Characterization of A1GaN/A1N/GaN HEMT Structures with a Compositionally Step-Graded A1GaN Barrier Layer

A new A1GaN/A1N/GaN high electron mobility transistor （HEMT） structure using a compositionally step-graded A1GaN barrier layer is grown on sapphire by metalorganic chemical vapour deposition （MOCVD）. The structure demonstrates significant enhancement of two-dimensional electron gas （2DEG） mobility and smooth surface morphology compared with the conventional HEMT structure with high A1 composition A1GaN barrier. The high 2DEG mobility of 1806 cm2/Vs at room temperature and low rms surface roughness of 0.220 nm for a scan area of 5μm×5 μm are attributed to the improvement of interracial and crystal quality by employing the stepgraded barrier to accommodate the large lattice mismatch stress. The 2DEG sheet density is independent of the measurement temperature, showing the excellent 2DEG confinement of the step-graded structure. A low average sheet resistance of 314.5Ω/square, with a good resistance uniformity of 0.68%, is also obtained across the 50 mm epilayer wafer. HEMT devices are successfully fabricated using this material structure, which exhibits a maximum extrinsic transconductance of 218 mS/ram and a maximum drain current density of 800 mA/mm.     

GaN MOS-HEMT Using Ultra-Thin A1203 Dielectric Grown by Atomic Layer Deposition

We report a GaN metal-oxide-semiconductor high electron mobility transistor （MOS-HEMT） with atomic layer deposited （ALD） Al2O3 gate dielectric. Based on the previous work [Appl. Phys. Lett. 86 （2005） 063501] of Ye et al. by decreasing the thickness of the gate oxide to 3.5nm and optimizing the device fabrication process, the device with maximum transconductance of 150mS/mm is produced and discussed in comparison with the result of lOOmS/mm of Ye et al. The corresponding drain current density in the 0.8-μm-gate-length MOS-HEMT is 800mA/mm at the gate bias of 3.0 V. The gate leakage is two orders of magnitude lower than that of the conventional A1GaN/GaN HEMT. The excellent characteristics of this novel MOS-HEMT device structure with ALD Al2O3 gate dielectric are presented.     

Electrical Characterization of Metal-Insulator-Metal Capacitors with Atomic-Layer-Deposited HfO2 Dielectrics for Radio Frequency Integrated Circuit Application

Metal-insulator-metal （MIM） capacitors with atomic-layer-deposited HfO2 dielectric and TaN electrodes are investigated for rf integrated circuit applications. For 12nm HfO2, the fabricated capacitor exhibits a high capacitance density of 15.5fF/μm2 at 100kHz, a small leakage current density of 6.4 × 10^-9 A/cm^2 at 1.8V and 125℃, a breakdown electric field of 2.6 MV//cm as well as voltage coefficients of capacitance （VCCs） of 2110ppm/V^2 and -824 ppm/V at 100kHz. Further, it is deduced that the conduction mechanism in the high field range is dominated by the Poole-Frenkel emission, and the conduction mechanism in the low field range is possibly related to trap-assisted tunnelling. Finally, comparison of various HfO2 MIM capacitors is present, suggesting that the present MIM capacitor is a promising candidate for future rf integrated circuit application.     

实施分层作业的若干策略

《数学课程标准》明确指出"义务教育阶段的数学课程应突出体现基础性、普及性和发展性,使数学教育面向全体学生,实现人人学有价值的数学,人人都能获得必需的数学,不同的人在数学上得到不同的发展".随着班额的逐渐增大,学困生的比例随之增大,不交作业的学生逐渐增多,而交作业的学生敷衍了事的数量也居高不下.     

分段函数在生活中的应用

分段函数在生活中的应用既能很好地考查学生对一些基本函数、基础知识的掌握情况,又能考查学生灵活运用知识解决实际问题的能力,同时又能考查学生是否能运用运动与静止、变化与不变、特殊与一般的辩证思想.解答这类问题的关键是要紧扣题设条件(分段函数),根据自变量的不同取值范围,实施分类解答,做到不重不漏,分层讨论求解.……     

新课标理念下对“分层教学”始于“过程教学”的思考

“提供多样课程，适应个性选择”是《普通高中数学课程标准》中，非常重要的基本理念。它是《义务教育数学课程标准》中“人人数学观”的一种延续，它在强调高中数学课程应具有多样性和选择性的同时，提出了一种十分重要的数学教学思想，即“分层教学思想”．它强调了数学教学应促进学生的个性发展。使不同的学生在数学上得到不同的发展．这样就要求我们的数学教师在教学中应具有分层的意识，而这种分层的意识不仅仅是体现在帮助学生对课程多层次、多种类的选择上，还更应表现在具体的数学课堂教学中．     

压电传感器探测层合板分层的数值分析

用修正的准三维有限元法分析了受单轴拉伸表面覆盖有压电薄膜的复合材料层合板。文中首先讨论了压电薄膜层对层合板层间应力的影响，然后在存在分层裂纹的情况下，计算了压电层的电压分布。结果表明将压电薄膜作为传感器来进行分层探测是可行的。文中最后考虑了多种因素对传感灵敏度的影响。     

Study on failure process of delaminated stiffened composite plates under compression

Failure behavior of the delaminated stiffened composite plates under compression is studied by the finite element method, based on a Global-Local variational model. A virtual crack closure technique and a self-adaptive grid moving scheme are proposed to predict the delamination growth process. The contact effect along the delamination front is considered. The numerical results show that the influences of the distribution and location of the stiffeners, the configuration and size of the delamination, the boundary condition and the contact upon the failure behavior of the plates are significant. The project supported by the National Natural Science Foundation of China (59975014)     

分层流体中移动动量源生成准二维偶极子涡街特性实验

采用水平移动射流方法模拟移动动量源,实验研究了该移动动量源在密度分层流体中生成准二维偶极子涡街的机理,分析了偶极子涡街的演化特性. 在系列实验基础上,获得了移动动量源在密度分层流体中能够演化为偶极子涡街的(Re,Fr)组合条件. 对不同的Re取值,获得了偶极子涡街无因次形成时间及其无因次涡街平均波长倒数与Fr之间的相关关系,表明它们不依赖于Re数,而与Fr近似为幂指数关系. 关键词： 分层流体 移动动量源 偶极子涡街 涡街形成时间