光辐射计量测试技术

简要介绍国外光辐射计量采用的主要方法、测试手段和发展趋势。为了满足国防系统对光辐射计量的需要建立了一批计量标难，解决了光辐射源辐射特性和探测器特性计量测试问题。     

两段级联掺铒光纤放大器的优化研究

基于Giles模型,研究了980 nm和1480 nm泵浦的两段级联掺铒光纤放大器(EDFA)的设计,得出了掺铒光纤(EDF)的最佳长度和光隔离器的最佳位置随泵浦功率和信号功率的变化关系.比较980 nm和1480 nm泵浦的两段级联EDFA,可以发现,前者的最佳EDF长度短,而光隔离器最佳位置距EDFA输入端远.     

Structure and Photoluminescence of Nano-ZnO Films Grown on a Si （100） Substrate by Oxygen- and Argon-Plasma-Assisted Thermal Evaporation of Metallic Zn

Nano-ZnO thin films were prepared by oxygen- and argon-plasma-assisted thermal evaporation of metallic Zn at low temperature, followed by low-temperature annealing at 300℃ to 500℃ in oxygen ambient. X-ray diffraction patterns indicate that the nano-ZnO films have a polycrystalline hexagonal wurtzite structure. Raman scattering spectra demonstrate the existence of interface layers between Zn and ZnO. Upon annealing at 400℃ for i h, the interface mode disappears, and photoluminescence spectra show a very strong ultraviolet emission peak around 381 nm. The temperature-dependent PL spectra indicate that the UV band is due to free-exciton emission.     

High-Average-Power Nanosecond Quasi-Phase-Matched Single-Pass Optical Parametric Generator in Periodically Poled Lithium Niobate

A pulsed nanosecond optical parametric generator (OPG) in periodically poled lithium niobate (PPLN) crysal is presented. The pump laser is an acousto-optically Q-switched Nd:YVO4 laser with the maximum average power of 6.58 W. When the repetition rate is 50kHz and the pulse width of the pump source is 80ns, the maximum average total output power of the single-pass PPLN OPG is about 1.9 W, which includes 1.322 W of 1.536μm signal radiation. The length of the PPLN crystal is only 38.7mm (at room temperature) with a grating period of 28.93μm (at room temperature). The 1.502-1.536μm signal radiation and 3.652-3.465μm idler radiation are obtained by adjusting the PPLN crystal temperature from 155℃ to 250℃.     

辐射加热金X光再发射时间测量

利用星光Ⅱ三倍频激光打双盘靶，研究了辐射加热材料的Ｘ光发射时间。激光脉冲能量４０～６０Ｊ、脉冲宽度６００～７００ｐｓ。通过两台时间关联的亚千Ｘ光能谱仪分别监测双盘靶初、次级发射Ｘ光谱，给出了辐射加热次级Ｘ光再发射时间。     

法沃尔斯基（FavorskiiAE）重排新进展

本文介绍了近年来法沃尔斯基重排反应在手性药物，立方烷系，杂环衍生物环烷小合成中的最新动态有应用前景。     

利用半导体光放大器进行光脉冲消基座的理论研究

提出了一种利用半导体光放大器(SOA)联合可调谐光滤波器进行高阶孤子压缩消基座的新方法.进行了详尽的理论分析和优化.数值计算表明,在一定条件下,这种方法能够在不展宽脉冲的前提下,对基座进行有效地抑制.