含氟碳菁染料聚集行为的研究

本文对五种不同结构的含氟碳菁染料的甲醇溶液及吸附在碘溴化银T 颗粒表面的聚集行为进行了研究 ,测定了照相性能 ,计算了增感倍率。Dye1 ,Dye2 ,Dye3在甲醇溶液中测得的单分子态吸收曲线 ,当取代基从C2 H5→CH3→无取代基时 ,最大吸收峰对应的波长向短波方向移动 ;乙基取代基的增感染料 (Dye1 )吸附在碘溴化银表面形成的J 聚集态峰值较高 ,对应的增感倍率也高。没有取代基的增感染料 (Dye3)不形成J 聚集 ,增感倍率低 ,有减感作用。Dye4与Dye5相比 ,Dye4具有尖而窄的J 聚集反射光谱 ,增感倍率高。结果表明 :不同结构的增感染料吸附在卤化银颗粒上形成的J 聚集态不同 ,吸收谱带窄的J 聚集态增感染料具有较高的增感倍率。     

张志三先生的生平

张志三,光谱学家。《光谱学与光谱分析》的副主编、顾问。早期致力于原子发射光谱应用的研究。建立较完善的分子光谱实验室,为我国光谱学的发展做出了贡献。热心进行激光光谱的应用研究,促进了我国激光物理,原子、分子物理的发展。张志三先生因病于2003年9月20日在北京逝世,享年83岁。张先生严以律己,宽厚待人,治学严谨的科学态度,深得科技界同行的爱戴和赞誉。得知张先生过世的消息,大家深为悲痛。张志三先生的生前好友于9月25日到医院向张先生作最后告别。     

原子光谱线增宽的原因

本文从理论上给出了原子光谱线增宽的几种原因 ,即 :①自然线宽 ,它是原子的内禀特性 (即在跃迁中所涉及到的能级的特性 ) ;②多普勒增宽 ,它是原子无规则热运动的结果 ;③碰撞增宽 ,它是原子间相互作用的结果。并对这几种原因分别给出了数量级上的估算。对原子光谱的测定具有参考意义。     

Spectral property and its shape transition on ^72-84Kr isotopes in microscopic core plus two-quasiparticle approach

By using a microscopic sdIBM-2 2q.p, approach, the levels of the ground-band, 7-band and partial two-quasi-particle bands for ^72-84Kr isotopes are calculated. The data obtained are in good agreement with the recent experimental results, and successfully reproduce the nuclear shape phase transition of ^72-S4Kr isotopes at zero temperature.The ground-state band is described successfully up to J^π=18^ and Ex=10.0MeV. Based on this model, the aligned requisite minimum energy has been deduced. The theoretical calculations indicate that no distinct change of nuclear states is caused by the abruptly broken pair of a boson, and predict that the first backbending of Kr isotopes may be the result of aligning of two quasi-neutrons in orbit g9/2, which galus the new experimental support of the measurements of g factors in the ^78-86Kr isotopes.     

Spectral Anomalies in the Fraunhofer Diffraction Pattern

We study the spectral characteristics theoretically and experimentally in the Fraunhofer diffraction pattern formed by the diffraction of a spatially coherent, polychromatic light through a slit. It is found that the spectrum in some diffraction directions close to the singular direction is redshifted, compared to the spectrum of the incident polychromatic light, and blueshifted in other directions, and splits into two lines at the singular direction. We show that the experimental results are consistent with the theoretical expectations.     

高阶特征线性及其与semi-Lagrangian方法的比较

特征线性与semi-Lagrangian方法都是处理流体方程时间离散的两种有效的方法．它们比经典的半隐格式，如Backward-Euler／Adams-Bashforth方法有更好的稳定性．本提出一种基于高阶空间离散的特征线法，通过稳定性，精度和计算复杂性与semi-Lagrangian方法进行比较，分析了高阶特征线法的有效性和适用性，并从数值试验上对分析结果进行验证．     

一种有机电致发光共聚物的制备和性能

采用Suzuki方法合成了9，9-二辛基芴与萘并硒二唑的两种无规共聚物并研究了其紫外光谱、光致发光和电致发光性能。两种聚合物的电致发光波长为650～666nm，均为发饱和红光的LED材料，其电致发光外量子效率最高达到了1．05％。随着共聚物中萘并硒二唑含量的增加，共聚物的光致发光和电致发光的发射波长均有少量红移。证明了根据共轭高聚物链内能量转移原理，在聚芴链中引入不同含量的窄带隙杂环单元可实现对聚芴发光颜色的调节。     

过渡金属表面γ-氨丙基三甲氧基硅烷膜的研究

本文对在过渡金属铁、镍电极表面制备得到的γ-氨丙基三甲氧基硅烷(γ-APS)膜进行了研究。实验中对硅烷膜用X-射线光电子能谱(XPS)、现场表面增强拉曼散射光谱(SERS)和原子力显微镜(AFM)进行了表征。X-射线光电子能谱(XPS)的结果发现存在两个N1s峰,表明γ-APS膜中的氨基有两种存在方式:自由氨基和质子化氨基。实验中还发现现场表面增强拉曼散射光谱(SERS)是研究金属/γ-APS体系中界面层结构非常有效的手段,SERS结果表明硅醇羟基和氨基发生了竞争吸附,且γ-APS分子在外加电位等条件的影响下吸附状态会发生一定变化。原子力显微镜(AFM)的表征结果在微观上显示电极表面的γ-APS膜上形成了一种较规则的微孔结构,这种结构可能与基底的性质有关。     

Theoretical Analysis of Characteristics of GaxInl—x NyAsl—y／GaAs Quantum Well Lasers with Different Intermediate Layers

Based on the band anticrossing model, the effects of the strain-compensated layer and the strain-mediated layero n the band structure, gain and differential gain of GalnNAs/GaAs quantum well lasers have been investigated. The results show that the GaNAs barrier has a disadvantage in increasing the density of states in the conduction band. Meanwhile, the multilayer quantum wells need higher transparency carrier density than the GalnNAs/GaAs single quantum well with the same wavelength. However, they help to suppress the degradation of the differential gain. The calculation also shows that from the viewpoint of band structure, the strain-compensated structure and the strain-mediated structure have similar features.     

Yb:FAP和Yb:C_3S_2-FAP晶体光谱的温度特性和选择激发

报导了Yb :FAP和Yb :C3S2 _FAP晶体在不同温度下的吸收光谱和荧光光谱实验结果 ,研究发现由于电子_声子近共振耦合作用 ,Yb :FAP和Yb :C3S2 _FAP晶体均存在有明显的振动谱 ,Yb :FAP晶体的零声子线在低温下还劈裂为相差 10cm- 1 的两条线 .采用激光选择激发技术研究了Yb3 离子在FAP和C3S2 _FAP晶体中的格位特征 ,结果表明Yb3 离子在这两种基质中都只占据Ca(Ⅱ )格位 ,但由于CaF2 的挥发 ,导致了Ca(Ⅱ )格位的局部畸变 .